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UPD4482323GF-A60Y

产品描述256KX32 CACHE SRAM, 3.5ns, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
产品类别存储    存储   
文件大小256KB,共28页
制造商Renesas(瑞萨电子)
官网地址https://www.renesas.com/
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UPD4482323GF-A60Y概述

256KX32 CACHE SRAM, 3.5ns, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100

UPD4482323GF-A60Y规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
零件包装代码QFP
包装说明LQFP,
针数100
Reach Compliance Codeunknown
ECCN代码3A991.B.2.A
最长访问时间3.5 ns
其他特性PIPELINED ARCHITECTURE
JESD-30 代码R-PQFP-G100
JESD-609代码e0
长度20 mm
内存密度8388608 bit
内存集成电路类型CACHE SRAM
内存宽度32
功能数量1
端子数量100
字数262144 words
字数代码256000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织256KX32
封装主体材料PLASTIC/EPOXY
封装代码LQFP
封装形状RECTANGULAR
封装形式FLATPACK, LOW PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
座面最大高度1.7 mm
最大供电电压 (Vsup)3.465 V
最小供电电压 (Vsup)3.135 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层TIN LEAD
端子形式GULL WING
端子节距0.65 mm
端子位置QUAD
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度14 mm
Base Number Matches1

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DATA SHEET
MOS INTEGRATED CIRCUIT
μ
PD4482163, 4482183, 4482323, 4482363
8M-BIT CMOS SYNCHRONOUS FAST SRAM
PIPELINED OPERATION
DOUBLE CYCLE DESELECT
Description
The
μ
PD4482163 is a 524,288-word by 16-bit, the
μ
PD4482183 is a 524,288-word by 18-bit,
μ
PD4482323 is a 262,144-
word by 32-bit and the
μ
PD4482363 is a 262,144-word by 36-bit synchronous static RAM fabricated with advanced CMOS
technology using Full-CMOS six-transistor memory cell.
The
μ
PD4482163,
μ
PD4482183,
μ
PD4482323 and
μ
PD4482363 integrates unique synchronous peripheral circuitry, 2-bit
burst counter and output buffer as well as SRAM core. All input registers are controlled by a positive edge of the single
clock input (CLK).
The
μ
PD4482163,
μ
PD4482183,
μ
PD4482323 and
μ
PD4482363 are suitable for applications which require synchronous
operation, high speed, low voltage, high density and wide bit configuration, such as cache and buffer memory.
ZZ has to be set LOW at the normal operation. When ZZ is set HIGH, the SRAM enters Power Down State (“Sleep”). In
the “Sleep” state, the SRAM internal state is preserved. When ZZ is set LOW again, the SRAM resumes normal operation.
The
μ
PD4482163,
μ
PD4482183,
μ
PD4482323 and
μ
PD4482363 are packaged in 100-pin PLASTIC LQFP with a 1.4 mm
package thickness for high density and low capacitive loading.
Features
Single 3.3 V power supply
Synchronous operation
Operating temperature : T
A
= 0 to 70
°C
(-A44, -A50, -A60)
T
A
=
−40
to
+85 °C
(-A44Y, -A50Y, -A60Y)
Internally self-timed write control
Burst read / write : Interleaved burst and linear burst sequence
Fully registered inputs and outputs for pipelined operation
Double-Cycle deselect timing
All registers triggered off positive clock edge
3.3 V LVTTL Compatible : All inputs and outputs
Fast clock access time : 2.8 ns (225 MHz), 3.1 ns (200 MHz), 3.5 ns (167 MHz)
Asynchronous output enable : /G
Burst sequence selectable : MODE
Sleep mode : ZZ (ZZ = Open or Low : Normal operation)
Separate byte write enable : /BW1 to /BW4, /BWE (
μ
PD4482323,
μ
PD4482363)
/BW1, /BW2, /BWE (
μ
PD4482163,
μ
PD4482183)
Global write enable : /GW
Three chip enables for easy depth expansion
Common I/O using three state outputs
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. M14904EJ4V0DS00 (4th edition)
Date Published February 2006 NS CP(K)
Printed in Japan
The mark shows major revised points.
The mark <R> shows major revised points.
2000
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
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