INTEGRATED CIRCUITS
SA3603
Cellular-band low voltage front-end
Preliminary specification
IC17 Data Handbook
1999 Dec 17
Philips
Semiconductors
Philips Semiconductors
Preliminary specification
Cellular-band low voltage front-end
SA3603
DESCRIPTION
The SA3603 is an integrated Low-Noise Amplifier (LNA) and mixer
designed in a 30 GHz f
T
advanced BICMOS process, Qubic3, for
high-performance low power Cellular-band communication systems.
The LNA has a 1.6 dB noise figure at 881 MHz with 17.5 dB gain
and an IIP3 intercept of –4 dBm. The single-ended input, single
balanced mixer has a 9.5 dB noise figure with 7.5 dB gain and IIP3
of +6.0 dBm at 881 MHz.
PIN CONFIGURATION
1
2
3
4
5
6
7
8
16 V
CC
MIXER
15 MIXER IF OUT–
14 MIXER IF OUT+
13 GND
12 MIXER RF IN
11 GND
10 LNA RF OUT
9 LNA GAIN Sel
LO IN
V
CC
LO Buffer
LO OUT
GND
V
CC
LNA
GND
LNA RF IN
GND
FEATURES
•
Integrated LNA output matching
•
Excellent gain stability versus temperature and supply voltage
•
LNA, mixer and LO buffer power down capability
APPLICATIONS
SR02104
•
IS-136 Standard systems
•
Wireless radios
ORDERING INFORMATION
DESCRIPTION
16-Pin Thin Shrink Small Outline Package (Surface-mount, TSSOP)
Figure 1. Pin Configuration
TEMPERATURE RANGE
–40 to +85
°
C
ORDER CODE
SA3603 DH
DWG #
1999 Dec 17
2
Philips Semiconductors
Preliminary specification
Cellular-band low voltage front-end
SA3603
PINOUT DEFINITION
1
2
3
4
5
6
7
8
16 V
CC
MIXER
15 MIXER IF OUT–
14 MIXER IF OUT+
13 GND
12 MIXER RF IN
11 GND
10 LNA RF OUT
9 LNA GAIN Sel
LO IN
V
CC
LO Buffer
LO OUT
GND
V
CC
LNA
GND
LNA RF IN
GND
SR02247
Figure 2. Pinout definition
PIN DESCRIPTION
PIN NUMBER
1
2
3
4, 6, 8, 11, 13
5
7
9
10
12
14
15
16
SYMBOL
LO_IN
VCC LO BUFFER
LO OUT
GND
VCC LNA
LNA RF IN
LNA GAIN SEL
LNA RF OUT
MIXER RF IN
MIXER IF OUT+
MIXER IF OUT–
VCC MIXER
VCO input
LO buffer supply voltage
VCO output
Ground
LNA supply voltage
LNA input
LNA gain select
LNA output
Mixer input
Mixer output +
Mixer output –
Mixer supply voltage
FUNCTION
1999 Dec 17
3
Philips Semiconductors
Preliminary specification
Cellular-band low voltage front-end
SA3603
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
CC
V
IN
P
D
T
JMAX
P
MAX
T
STG
Supply voltage
1
Voltage applied to any other pin
Power dissipation, T
amb
= 25°C (still air)
2
16-Pin Plastic TSSOP
Maximum operating junction temperature
Maximum power input/output
Storage temperature range
PARAMETER
RATING
–0.3 to +3.5
–0.3 to (V
CC
+ 0.3)
TBD
150
+20
–65 to +150
UNITS
V
V
mW
°C
dBm
°C
NOTES:
1. Transients exceeding 3.6 V on V
CC
pin may damage product.
2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance,
θ
JA
: 16-Pin TSSOP = TBD°C/W
3. Pins 14 and 15 are ESD sensitive (mixer outputs).
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
CC
T
amb
Supply voltage
Operating ambient temperature range
PARAMETER
RATING
2.7 to 3.3
–40 to +85
UNITS
V
°C
DC ELECTRICAL CHARACTERISTICS
V
CC
= +2.8 V, T
amb
= 25°C; unless otherwise stated.
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
LO buffer
I
CC
Supply current
LNA high gain
Mixer
V
IH
V
IL
I
BIAS
Logic 1 level
Logic 0 level
Input bias current
Logic 1 or 0
2.0
–0.3
–5
TYP
6
6
12
V
CC
+ 0.3
0.5
+5
MAX
mA
mA
mA
V
V
µA
UNITS
1999 Dec 17
4
Philips Semiconductors
Preliminary specification
Cellular-band low voltage front-end
SA3603
AC ELECTRICAL CHARACTERISTICS
V
CC
= +2.8 V; f
RF
= 881 MHz, f
VCO
= 991 MHz; T
amb
= 25°C; unless otherwise stated.
LIMITS
SYMBOL
Overall System
G
SYS
System gain
LNA + Mixer (excluding filter
loss)
22
dB
PARAMETER
TEST CONDITIONS
MIN.
–3σ
TYP
+3σ
MAX.
UNITS
Low Noise Amplifier
f
RF
S
21
S
21
S
12
S
11
S
22
P
-1dB
IIP3
NF
t
ON/OFF
Mixer
f
RF
f
IF
PG
C
S
11M
NF
M
P
-1dB
IIP3
M
IIP
2INT
P
RFM-IF
t
ON/OFF
LO Buffer
f
LO
P
IN
P
OUT
S
11
S
22
P
LO-IF
P
LO-RFM
P
LO-RF
t
ON/OFF
Input frequency range
Input power
Output power
Input return loss
Output return loss
LO feedthrough to IF
LO to mixer input feedthrough
LO to LNA input feedthrough
Harmonic content
Turn on/off time
1
NOTE:
1. External circuit dependent
50
Ω
system
50
Ω
system
939
–2
0
0
10
10
TBD
TBD
TBD
–20
100
1094
+2
MHz
dBm
dBm
dB
dB
dBm
dBm
dBm
dB
µs
RF input frequency range
IF input frequency range
Power conversion gain
Input match
SSB noise figure
Input 1 dB gain compression
Input third order intercept
Input second order intercept
RF feedthrough
Turn on/off time
1
P
RFin
= –35 dBm
P
RFin
= –27 dBm, 60 kHz offset
f
IF
= 110 MHz
Ext. impedance matching req.
869
70
110
7.5
–10
9.5
–15
6
26
TBD
100
894
200
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
µs
RF input frequency range
Gain
Gain in power-down mode
Reverse isolation
Input return loss
Output return loss
Input 1 dB gain compression
Input third order intercept
Noise figure
Turn on/off time
1
P
RFin
= –35 dBm, 60 kHz offset
@ 881 MHz
50
Ω
system
50
Ω
system
869
17.5
2
TBD
10
10
–19
–4
1.6
100
894
MHz
dB
dB
dB
dB
dB
dBm
dBm
dB
µs
1999 Dec 17
5
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