The SGA-4163 is a high performance SiGe HBT MMIC Amplifier. A
Darlington configuration featuring 1 micron emitters provides high
FT and excellent thermal perfomance. The heterojunction in-
creases breakdown voltage and minimizes leakage current be-
tween junctions. Cancellation of emitter junction non-linearities
results in higher suppression of intermodulation products. Only
2 DC-blocking capacitors, a bias resistor and an optional RF choke
are required for operation.
SGA-4163Z
Pb
RoHS Compliant
&
Green
Package
DC-5000 MHz, Cascadable
SiGe HBT MMIC Amplifier
The matte tin finish on Sirenza’s lead-free package utilizes a post
annealing process to mitigate tin whisker formation and is RoHS
Product Features
compliant per EU Directive 2002/95. This package is also manu-
factured with green molding compounds that contain no antimony
• Now available in Lead Free, RoHS
Compliant, & Green Packaging
trioxide nor halogenated fire retardants.
• Broadband Operation: DC-5000 MHz
Gain & Return Loss vs. Frequency
16
12
Gain (dB)
8
4
0
0
1
V
D
= 3.2 V, I
D
= 45 mA (Typ.)
0
-10
-20
Return Loss (dB)
• Cascadable 50 Ohm
• Operates From Single Supply
• Low Thermal Resistance Package
GAIN
ORL
IRL
Applications
•
•
•
•
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
-30
T
L
=+25ºC
-40
2
3
4
Frequency (GHz)
5
6
Symbol
G
Parameter
Small Signal Gain
Units
dB
Frequency
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
850 MHz
1950 MHz
Min.
9.5
Typ.
10.5
9.7
9.6
13.0
12.1
29.7
25.4
5000
Max.
11.5
P
1dB
OIP
3
Output Pow er at 1dB Compression
Output Third Order Intercept Point
dBm
dBm
MHz
dB
dB
dB
V
mA
°C/W
Bandw idth
Determined by Return Loss (>10dB)
IRL
ORL
NF
V
D
I
D
R
TH
,
j-l
Input Return Loss
Output Return Loss
Noise Figure
Device Operating Voltage
Device Operating Current
Thermal Resistance (junction to lead)
V
S
= 8 V
R
BIAS
= 110 Ohms
1950 MHz
1950 MHz
1950 MHz
2.9
41
28.0
20.1
5.0
3.2
45
255
3.5
49
Test Conditions:
I
D
= 45 mA Typ.
T
L
= 25ºC
OIP
3
Tone Spacing = 1 MHz, Pout per tone = -5 dBm
Z
S
= Z
L
= 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 Technology Court, Broomfield, CO. 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-100638 Rev. G
SGA-4163 DC-5000 MHz Cascadable MMIC Amplifier
Preliminary
Typical RF Performance at Key Operating Frequencies
Symbol
Parameter
Unit
100
Frequency
Frequency (MHz)
Frequency (MHz)(MHz)
500
850
1950
2400
3500
G
OIP
3
P
1dB
IRL
ORL
S
12
NF
Small Signal Gain
Output Third Order Intercept Point
Output Power at 1dB Compression
Input Return Loss
Output Return Loss
Reverse Isolation
Noise Figure
V
S
= 8 V
V
S
= 8 V
R
BIAS
= 110 Ohms
R
BIAS
= 39 Ohms
dB
dBm
dBm
dB
dB
dB
dB
10.3
10.2
30.2
12.9
10.5
29.7
13.0
23.7
24.3
16.3
4.8
9.7
25.4
12.1
28.0
20.1
17.2
5.0
9.6
23.0
11.1
36.7
18.7
17.6
5.3
9.4
29.1
19.7
15.5
26.7
20.8
16.0
4.6
16.6
17.6
18.4
Test Conditions:
= 45 mA Typ.
II
D
= 80 mA Typ.
D
T = 25ºC
T
LL
= 25ºC
OIP Tone Spacing = 1 MHz, Pout per tone = -5 dBm
OIP
33
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Z
S
= Z = 50 Ohms
Z
S
= Z
LL
= 50 Ohms
Noise Figure vs. Frequency
V
D
= 3.2 V, I
D
= 45 mA (Typ.)
7
6
5
4
3
Absolute Maximum Ratings
Parameter
Max.
Device Current
(I
D
)
Max.
Device
Voltage (V
D
)
Absolute Limit
90
mA
5V
+18 dBm
+1
50
°C
-40°C to +85°C
+150°C
Noise Figure (dB)
Max.
RF Input Power
Max.
Junction Temp
. (T
J
)
Operating Temp
. Range (T
L
)
Max.
Storage Temp
.
T
L
=+25ºC
2
0
0.5
1
1.5
2
Frequency (GHz)
2.5
3
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continous operation,
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias conditions should also satisfy the following expression:
I
D
V
D
< (T
J
- T
L
) / R
TH
, j-l
OIP
3
vs. Frequency
V
D
=3.2 V, I
D
= 45 mA (Typ.)
35
30
OIP
3
(dBm)
P
1dB
(dBm)
18
15
12
9
P
1dB
vs. Frequency
V
D
= 3.2 V, I
D
= 45 mA (Typ.)
25
20
T
L
=+25ºC
15
0
0.5
1
1.5
2
Frequency (GHz)
2.5
3
6
0
0.5
1
1.5
2
Frequency (GHz)
T
L
=+25ºC
2.5
3
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-100638 Rev. G
SGA-4163 DC-5000 MHz Cascadable MMIC Amplifier
Preliminary
Typical RF Performance Over Temperature (
Bias: V
D
= 3.2 V,
I
D
= 45 mA (Typ.)
)
16
12
S
21
(dB)
8
4
|
S
21
|
vs. Frequency
0
-10
S
11
(dB)
-20
-30
|
S
11
|
vs. Frequency
T
L
0
0
1
2
3
4
Frequency (GHz)
5
+25°C
-40°C
+85°C
T
L
-40
6
+25°C
-40°C
+85°C
0
1
2
3
4
Frequency (GHz)
5
6
-10
-15
S
12
(dB)
|
S
12
|
vs. Frequency
0
-10
S
22
(dB)
|
S
22
|
vs. Frequency
-20
-25
-20
-30
T
L
-30
0
1
2
3
4
Frequency (GHz)
5
+25°C
-40°C
+85°C
T
L
-40
+25°C
-40°C
+85°C
6
0
1
2
3
4
Frequency (GHz)
5
6
NOTE: Full S-parameter data available at
www.sirenza.com
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-100638 Rev. G
SGA-4163 DC-5000 MHz Cascadable MMIC Amplifier
Preliminary
Basic Application Circuit
R
BIAS
Application Circuit Element Values
Frequency (Mhz)
Reference
Designator
500
850
1950
2400
3500
V
S
1 uF
1000
pF
C
D
L
C
C
B
C
D
L
C
220 pF
100 pF
68 nH
100 pF
68 pF
33 nH
68 pF
22 pF
22 nH
56 pF
22 pF
18 nH
39 pF
15 pF
15 nH
RF in
C
B
1,2
3
SGA-4163
6
4,5
C
B
RF out
Recommended Bias Resistor Values for I
D
=45mA
R
BIAS
=( V
S
-V
D
) / I
D
Supply Voltage(V
S
)
R
BIAS
6V
62
8V
110
10 V
150
12 V
200
V
S
R
BIAS
1 uF
1000 pF
Note: R
BIAS
provides DC bias stability over temperature.
C
D
L
C
A41
Mounting Instructions
1. Use a large ground pad area near device pins 1, 2,
C
B
C
B
4, and 5 with many plated through-holes as shown.
3. We recommend 1 or 2 ounce copper. Measurements
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
Pin #
3
Function
RF IN
Description
RF input pin. This pin requires the use
of an external DC blocking capacitor
chosen for the frequency of operation.
Connection to ground. For optimum RF
performance, use via holes as close to
ground leads as possible to reduce lead
inductance .
Part Identification Marking
6 5 4
6 5 4
1, 2, 4, 5
GND
A41
1 2 3
A41Z
1 2 3
6
RF output and bias pin. DC voltage is
RF OUT/ present on this pin, therefore a DC
BIAS blocking capacitor is necessary for
proper operation.
Caution: ESD sensitive
Appropriate precautions in handling, packaging
and testing devices must be observed.
Part Number Ordering Information
Part Number
Reel Size
Devices/Reel
SGA-4163
SGA-4163Z
7"
7"
3000
3000
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
4
http://www.sirenza.com
EDS-100638 Rev. G
SGA-4163 DC-5000 MHz Cascadable MMIC Amplifier
SOT-363 PCB Pad Layout
Dimensions in inches [millimeters]
Preliminary
RF
OUT
RF
IN
Notes:
1. Provide a large ground pad area under device
pins 1, 2, 4, & 5 with many plated via holes as
shown.
2. Dimensions given for 50 Ohm RF I/O lines are for
31 mil thick Getek. Scale accordingly for different
board thicknesses and dielectric contants.
3. We recommend 1 or 2 ounce copper. Measure-
ments for this data sheet were made on a 31 mil
thick Getek with 1 ounce copper on both sides.
SOT-363 Nominal Package Dimensions
Dimensions in inches [millimeters]
A link to the SOT-363 package outline drawing with full dimensions and
tolerances may be found on the product web page at www.sirenza.com.
“tensymetry”这个词在《韦伯斯特词典》中没有解释，但在医学界却广为人知。由Tensys Medical Systems公司开发的tensymetry是一种使用生物机械、电气、软件工程的专有组合技术。利用这三种强大的技术，你可在手术室内对病人的心跳血压进行精确、连续、实时和非侵入性测量。 该技术结出的果实就是该公司的T-line Tensymeter产品。该产品线的最新进展是去年...[详细]
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