Standard SRAM, 128KX24, 12ns, CMOS, PQFP100, TQFP-100
参数名称 | 属性值 |
是否无铅 | 含铅 |
是否Rohs认证 | 不符合 |
零件包装代码 | QFP |
包装说明 | TQFP-100 |
针数 | 100 |
Reach Compliance Code | compliant |
ECCN代码 | 3A991.B.2.A |
最长访问时间 | 12 ns |
I/O 类型 | COMMON |
JESD-30 代码 | R-PQFP-G100 |
JESD-609代码 | e0 |
长度 | 20 mm |
内存密度 | 3145728 bit |
内存集成电路类型 | STANDARD SRAM |
内存宽度 | 24 |
功能数量 | 1 |
端子数量 | 100 |
字数 | 131072 words |
字数代码 | 128000 |
工作模式 | ASYNCHRONOUS |
最高工作温度 | 85 °C |
最低工作温度 | -40 °C |
组织 | 128KX24 |
输出特性 | 3-STATE |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | LQFP |
封装等效代码 | QFP100,.63X.87 |
封装形状 | RECTANGULAR |
封装形式 | FLATPACK, LOW PROFILE |
并行/串行 | PARALLEL |
峰值回流温度(摄氏度) | NOT SPECIFIED |
电源 | 3.3 V |
认证状态 | Not Qualified |
座面最大高度 | 1.6 mm |
最大待机电流 | 0.02 A |
最小待机电流 | 3 V |
最大压摆率 | 0.19 mA |
最大供电电压 (Vsup) | 3.63 V |
最小供电电压 (Vsup) | 2.97 V |
标称供电电压 (Vsup) | 3.3 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | INDUSTRIAL |
端子面层 | Tin/Lead (Sn/Pb) |
端子形式 | GULL WING |
端子节距 | 0.65 mm |
端子位置 | QUAD |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
宽度 | 14 mm |
Base Number Matches | 1 |
IS61LV12824-12TQI | IS61LV12824-9TQI | IS61LV12824-12B | IS61LV12824-12BI | IS61LV12824-9B | IS61LV12824-9BI | IS61LV12824-12TQ | IS61LV12824-9TQ | IS61LV12824-8B | IS61LV12824-10BI | |
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描述 | Standard SRAM, 128KX24, 12ns, CMOS, PQFP100, TQFP-100 | Standard SRAM, 128KX24, 9ns, CMOS, PQFP100, TQFP-100 | Standard SRAM, 128KX24, 12ns, CMOS, PBGA119, PLASTIC, BGA-119 | Standard SRAM, 128KX24, 12ns, CMOS, PBGA119, PLASTIC, BGA-119 | Standard SRAM, 128KX24, 9ns, CMOS, PBGA119, PLASTIC, BGA-119 | Standard SRAM, 128KX24, 9ns, CMOS, PBGA119, PLASTIC, BGA-119 | Standard SRAM, 128KX24, 12ns, CMOS, PQFP100, TQFP-100 | Standard SRAM, 128KX24, 9ns, CMOS, PQFP100, TQFP-100 | Standard SRAM, 128KX24, 8ns, CMOS, PBGA119, PLASTIC, BGA-119 | Standard SRAM, 128KX24, 10ns, CMOS, PBGA119, PLASTIC, BGA-119 |
是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
零件包装代码 | QFP | QFP | BGA | BGA | BGA | BGA | QFP | QFP | BGA | BGA |
包装说明 | TQFP-100 | TQFP-100 | PLASTIC, BGA-119 | PLASTIC, BGA-119 | PLASTIC, BGA-119 | PLASTIC, BGA-119 | TQFP-100 | TQFP-100 | BGA, BGA119,7X17,50 | BGA, BGA119,7X17,50 |
针数 | 100 | 100 | 119 | 119 | 119 | 119 | 100 | 100 | 119 | 119 |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant | compliant | compliant | compliant | compliant |
ECCN代码 | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A |
最长访问时间 | 12 ns | 9 ns | 12 ns | 12 ns | 9 ns | 9 ns | 12 ns | 9 ns | 8 ns | 10 ns |
I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
JESD-30 代码 | R-PQFP-G100 | R-PQFP-G100 | R-PBGA-B119 | R-PBGA-B119 | R-PBGA-B119 | R-PBGA-B119 | R-PQFP-G100 | R-PQFP-G100 | R-PBGA-B119 | R-PBGA-B119 |
JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
长度 | 20 mm | 20 mm | 22 mm | 22 mm | 22 mm | 22 mm | 20 mm | 20 mm | 22 mm | 22 mm |
内存密度 | 3145728 bit | 3145728 bit | 3145728 bit | 3145728 bit | 3145728 bit | 3145728 bit | 3145728 bit | 3145728 bit | 3145728 bit | 3145728 bit |
内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
内存宽度 | 24 | 24 | 24 | 24 | 24 | 24 | 24 | 24 | 24 | 24 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 100 | 100 | 119 | 119 | 119 | 119 | 100 | 100 | 119 | 119 |
字数 | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words |
字数代码 | 128000 | 128000 | 128000 | 128000 | 128000 | 128000 | 128000 | 128000 | 128000 | 128000 |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | 85 °C | 85 °C | 70 °C | 85 °C | 70 °C | 85 °C | 70 °C | 70 °C | 70 °C | 85 °C |
组织 | 128KX24 | 128KX24 | 128KX24 | 128KX24 | 128KX24 | 128KX24 | 128KX24 | 128KX24 | 128KX24 | 128KX24 |
输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | LQFP | LQFP | BGA | BGA | BGA | BGA | LQFP | LQFP | BGA | BGA |
封装等效代码 | QFP100,.63X.87 | QFP100,.63X.87 | BGA119,7X17,50 | BGA119,7X17,50 | BGA119,7X17,50 | BGA119,7X17,50 | QFP100,.63X.87 | QFP100,.63X.87 | BGA119,7X17,50 | BGA119,7X17,50 |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | FLATPACK, LOW PROFILE | FLATPACK, LOW PROFILE | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | FLATPACK, LOW PROFILE | FLATPACK, LOW PROFILE | GRID ARRAY | GRID ARRAY |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
电源 | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | 1.6 mm | 1.6 mm | 2.41 mm | 2.41 mm | 2.41 mm | 2.41 mm | 1.6 mm | 1.6 mm | 2.41 mm | 2.41 mm |
最大待机电流 | 0.02 A | 0.02 A | 0.01 A | 0.02 A | 0.01 A | 0.02 A | 0.01 A | 0.01 A | 0.01 A | 0.02 A |
最小待机电流 | 3 V | 3.14 V | 3 V | 3 V | 3.14 V | 3.14 V | 3 V | 3.14 V | 3.14 V | 3 V |
最大压摆率 | 0.19 mA | 0.22 mA | 0.17 mA | 0.19 mA | 0.2 mA | 0.22 mA | 0.17 mA | 0.2 mA | 0.21 mA | 0.21 mA |
最大供电电压 (Vsup) | 3.63 V | 3.63 V | 3.63 V | 3.63 V | 3.63 V | 3.63 V | 3.63 V | 3.63 V | 3.63 V | 3.63 V |
最小供电电压 (Vsup) | 2.97 V | 3.135 V | 2.97 V | 2.97 V | 3.135 V | 3.135 V | 2.97 V | 3.135 V | 3.135 V | 2.97 V |
标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | INDUSTRIAL | INDUSTRIAL | COMMERCIAL | INDUSTRIAL | COMMERCIAL | INDUSTRIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | INDUSTRIAL |
端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
端子形式 | GULL WING | GULL WING | BALL | BALL | BALL | BALL | GULL WING | GULL WING | BALL | BALL |
端子节距 | 0.65 mm | 0.65 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 0.65 mm | 0.65 mm | 1.27 mm | 1.27 mm |
端子位置 | QUAD | QUAD | BOTTOM | BOTTOM | BOTTOM | BOTTOM | QUAD | QUAD | BOTTOM | BOTTOM |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
宽度 | 14 mm | 14 mm | 14 mm | 14 mm | 14 mm | 14 mm | 14 mm | 14 mm | 14 mm | 14 mm |
厂商名称 | - | - | - | - | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) |
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