PRELIMINARY DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µ
PC8187TB
SILICON MMIC HI-IP
3
FREQUENCY UP-CONVERTER
FOR WIRELESS TRANSCEIVER
DESCRIPTION
The
µ
PC8187TB is a silicon monolithic integrated circuit designed as frequency up-converter for wireless
transceiver. This IC is higher operating frequency, lower distortion and higher conversion gain than conventional
µ
PC8163TB.
This IC is manufactured using NEC’s 30 GHz f
max
UHS0 (Ultra High Speed Process) silicon bipolar process.
FEATURES
• High output frequency
• Supply voltage
: f
RFout
= 0.8 to 2.5 GHz
: V
CC
= 2.7 to 3.3 V
• High-density surface mounting : 6-pin super minimold package
APPLICATION
• TDMA, PCS, CDMA etc.
ORDERING INFORMATION
Part Number
Package
6-pin super minimold
Marking
C3G
Supplying Form
•
Embossed tape 8 mm wide.
•
Pin 1, 2, 3 face the tape perforation side.
•
Qty 3 kpcs/reel.
µ
PC8187TB-E3
Remark
To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order:
µ
PC8187TB)
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15106EJ1V0DS00 (1st edition)
Date Published October 2000 N CP(K)
Printed in Japan
©
2000
µ
PC8187TB
PIN CONNECTIONS
Pin No.
(Top View)
(Bottom View)
Pin Name
IFinput
GND
LOinput
GND
V
CC
RFoutput
1
C3G
3
4
4
3
2
3
2
5
5
2
4
6
6
1
1
5
6
SERIES PRODUCTS (T
A
= +25°C, V
CC
= V
PS
= V
RFout
= 3.0 V, Z
S
= Z
L
= 50
Ω
)
Part Number
I
CC
(mA)
15
9
9
5
16.5
f
RFout
(GHz)
0.8 to 2.5
0.4 to 2.0
0.8 to 2.5
0.4 to.2.0
0.8 to 2.0
CG (dB)
@RF 0.9 GHz
11
9
9.5
6
9
Note
@RF 1.9 GHz
11
7
8.5
4
5.5
@RF 2.4 GHz
10
−
8.0
−
−
µ
PC8187TB
µ
PC8106TB
µ
PC8172TB
µ
PC8109TB
µ
PC8163TB
P
O(sat)
(dBm)
Part Number
@RF 0.9 GHz
Note
OIP
3
(dBm)
@RF 2.4 GHz
+1
−
−0.5
−
−
@RF 0.9 GHz
+10
+5.5
+7.5
+1.5
+9.5
Note
@RF 1.9 GHz
+2.5
−4
0
−7.5
−2
@RF 1.9 GHz
+10
+2.0
+6.0
−1.0
+6.0
@RF 2.4 GHz
+8.5
−
+4.0
−
−
µ
PC8187TB
µ
PC8106TB
µ
PC8172TB
µ
PC8109TB
µ
PC8163TB
+4
−2
+0.5
−5.5
+0.5
Note
f
RFout
= 0.83 GHz @
µ
PC8163TB and
µ
PC8187TB
Remark
Typical performance. Please refer to
ELECTRICAL CHARACTERISTICS
in detail.
To know the associated product, please refer to each latest data sheet.
BLOCK DIAGRAM (FOR THE
µ
PC8187TB)
(Top View)
LOinput
GND
GND
V
CC
IFinput
RFoutput
2
Preliminary Data Sheet P15106EJ1V0DS00
µ
PC8187TB
SYSTEM APPLICATION EXAMPLES (SCHEMATICS OF IC LOCATION IN THE SYSTEM)
Low Noise Tr.
RX
DEMOD.
I
Q
VCO
SW
÷N
PLL
PLL
I
0˚
TX
PA
Phase
shifter
90˚
µ
PC8187TB
Q
To know the associated products, please refer to each latest data sheet.
Preliminary Data Sheet P15106EJ1V0DS00
3
µ
PC8187TB
PIN EXPLANATION
Applied
Voltage
(V)
−
Pin
Voltage
Note
(V)
1.2
Pin
No.
1
Pin
Name
IFinput
Function and Explanation
Equivalent Circuit
This pin is IF input to double bal-
anced mixer (DBM). The input is
designed as high impedance.
The circuit contributes to sup-
press spurious signal. Also this
symmetrical circuit can keep
specified performance insensitive
to process-condition distribution.
For above reason, double bal-
anced mixer is adopted.
GND pin. Ground pattern on the
board should be formed as wide
as possible. Track Length should
be kept as short as possible to
minimize ground impedance.
Local input pin. Recommendable
input level is
−10
to 0 dBm.
Supply voltage pin.
This pin is RF output from DBM.
This pin is designed as open
collector. Due to the high imped-
ance output, this pin should be
externally equipped with LC
matching circuit to next stage.
3
5
6
2
4
GND
GND
−
1
3
LOinput
−
2.1
−
−
5
6
V
CC
RFoutput
2.7 to 3.3
Same
bias as
V
CC
through
external
inductor
2
Note
Each pin voltage is measured at V
CC
= V
PS
= V
RFout
= 2.8 V.
4
Preliminary Data Sheet P15106EJ1V0DS00
µ
PC8187TB
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply Voltage
Power Dissipation of Package
Symbol
V
CC
P
D
T
A
= +25°C
Mounted on double-side copperclad 50
×
50
×
1.6
mm epoxy glass PWB
(T
A
= +85°C)
Test Conditions
Rating
3.6
270
Unit
V
mW
Operating Ambient Temperature
Storage Temperature
Maximum Input Power
T
A
T
stg
P
in
−40
to +85
−55
to +150
+10
°C
°C
dBm
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Symbol
V
CC
MIN.
2.7
−40
−10
0.8
50
TYP.
2.8
MAX.
3.3
Unit
V
Remarks
The same voltage should be applied
to pin 5 and 6
Operating Ambient Temperature
Local Input Level
RF Output Frequency
IF Input Frequency
T
A
P
LOin
f
RFout
f
IFin
+25
−5
−
−
+85
0
2.5
400
°C
dBm
GHz
MHz
Z
S
= 50
Ω
(without matching)
With external matching circuit
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, V
CC
= V
RFout
= 2.8 V, f
IFin
= 150 MHz, P
LOin
=
−
5 dBm)
Parameter
Circuit Current
Conversion Gain
Symbol
I
CC
CG1
CG2
CG3
Saturated RF Output Power
P
O(sat)
1
P
O(sat)
2
P
O(sat)
3
Test Conditions
No signal
f
RFout
= 0.83 GHz, P
IFin
=
−20
dBm
f
RFout
= 1.9 GHz, P
IFin
=
−20
dBm
f
RFout
= 2.4 GHz, P
IFin
=
−20
dBm
f
RFout
= 0.83 GHz, P
IFin
= 0 dBm
f
RFout
= 1.9 GHz, P
IFin
= 0 dBm
f
RFout
= 2.4 GHz, P
IFin
= 0 dBm
Note
MIN.
11
8
8
7
+1.5
0
−1.5
TYP.
15
11
11
10
+4
+2.5
+1
MAX.
19
14
14
13
−
−
−
Unit
mA
dB
dB
dB
dBm
dBm
dBm
Note
f
RFout
< f
LOin
@ f
RFout
= 0.83 GHz
f
LOin
< f
RFout
@ f
RFout
= 1.9 GHz/2.4 GHz
Preliminary Data Sheet P15106EJ1V0DS00
5
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