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UPC8128TB-E3

产品描述Wide Band Low Power Amplifier, 100MHz Min, 1900MHz Max, SOT-363, 6 PIN
产品类别无线/射频/通信    射频和微波   
文件大小69KB,共9页
制造商California Eastern Labs
官网地址http://www.cel.com/
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UPC8128TB-E3概述

Wide Band Low Power Amplifier, 100MHz Min, 1900MHz Max, SOT-363, 6 PIN

UPC8128TB-E3规格参数

参数名称属性值
Reach Compliance Codeunknown
其他特性HIGH RELIABILITY
特性阻抗50 Ω
构造COMPONENT
增益10 dB
最大工作频率1900 MHz
最小工作频率100 MHz
最高工作温度85 °C
最低工作温度-40 °C
射频/微波设备类型WIDE BAND LOW POWER
Base Number Matches1

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SILICON RFIC
LOW CURRENT AMPLIFIER FOR UPC8128TB
CELLULAR/CORDLESS TELEPHONES
FEATURES
• SUPPLY VOLTAGE:
Vcc = 2.4 to 3.3 V
Gain, G
P
(dB)
+20
GAIN vs.
FREQUENCYand VOLTAGE
• LOW CURRENT CONSUMPTION:
Icc = 2.8 mA, TYP at 3.0 V
• HIGH EFFICIENCY:
P
1
dB = -4 dBm, TYP at f = 1 GHz
• POWER GAIN:
G
P
= 12.5 dB, TYP at f = 1 GHz
• OPERATING FREQUENCY:
100 MHz to 1900 MHz (Output port LC matching)
• EXCELLENT ISOLATION:
ISOL = 39 dB TYP at f = 1 GHz
• HIGH DENSITY SURFACE MOUNTING:
6 pin super minimold or SOT-363 package.
+10
V
CC
= 3.3 V
0
V
CC
= 3.0 V
V
CC
= 2.4 V
-10
0.3
1.0
3.0
Frequency, f (GHz)
GAIN vs. VOLTAGE and FREQUENCY
+20
DESCRIPTION
The UPC8128TB is a Silicon RFICs designed as a buffer
amplifier for cellular or cordless telephones. This low current
amplifier operates on 3.0 V and is housed in a 6 pin super
minimold package.
The IC is manufactured using NEC's 20GHz f
T
NESAT™ III
silicon bipolar process. This process uses silicon nitride
passivation film and gold electrodes. These materials protect
the chip surface from external pollution and prevent corrosion/
migration. Thus, the IC has excellent performance, uniformity
and reliability.
Gain, Gp (dB)
+10
V
CC
= 3.3 V
0
V
CC
= 3.0 V
V
CC
= 2.4 V
-10
0.3
1.0
3.0
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°C,
V
CC
= V
OUT
= 3.0 V, Z
L
= Z
S
= 50
Ω,
at LC matched frequency)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
Icc
G
P
ISOL
PARAMETERS AND CONDITIONS
Circuit Current, No signal
Power Gain
Isolation
Output Power
at 1 dB Compression Point
Noise Figure
Input Return Loss
(without matching circuit)
Output Return Loss
(with external matching circuit)
3rd Order Intermodulation Distortion
f
1
= 1.000 GHz, f
2
= 1.001 GHz, P
0(each)
= -20 dBm
f
1
= 1.900 GHz, f
2
= 1.901 GHz, P
0(each)
= -20 dBm
f = 1.00 GHz
f = 1.90 GHz
f = 1.00 GHz
f = 1.90 GHz
f = 1.00 GHz
f = 1.90 GHz
f = 1.00 GHz
f = 1.90 GHz
f = 1.00 GHz
f = 1.90 GHz
f = 1.00 GHz
f = 1.90 GHz
UNITS
mA
dB
dB
dBm
dB
dB
dB
dBc
-50.0
-46.0
MIN
1.8
9.5
10.0
34.0
32.0
-7.5
--8.5
2.0
2.5
UPC 8128TB
SO6
TYP
2.8
12.5
13.0
39.0
37.0
-4.0
-4.0
6.0
6.0
5.0
5.5
10.0
14.0
MAX
3.8
14.5
15.0
7.5
7.5
P
1dB
NF
RL
IN
RL
OUT
IM
3
California Eastern Laboratories

 
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