Rev.1.4
_10
BATTERY PROTECTION IC FOR SINGLE-CELL PACK
S-8261 Series
The S-8261 series are lithium-ion/lithium polymer
rechargeable battery protection ICs incorporating high-
accuracy voltage detection circuit and delay circuit.
The S-8261 series are suitable for protection of single-
cell lithium ion/lithium polymer battery packs from
overcharge, overdischarge and overcurrent.
Features
(1) Internal high accuracy voltage detection circuit
•
Overcharge detection voltage
3.9 V to 4.4 V (applicable in 5 mV step)
Accuracy:
±25
mV (+25°C) and
±30
mV (−5°C to
+55°C)
*1
Accuracy:
±25
mV
•
Overcharge hysteresis voltage
0.0 V to 0.4 V
The overcharge hysteresis voltage can be selected from the range 0.0 V to 0.4 V in 50 mV step.
*1.
Overcharge release voltage= Overcharge detection voltage
−
Overcharge hysteresis voltage
(where overcharge release voltage< 3.8 V is prohibited.)
•
Overdischarge detection voltage
2.0 V to 3.0 V (10 mV step) Accuracy:
±50
mV
*2
•
Overdischarge hysteresis voltage
0.0 V to 0.7 V
Accuracy:
±50
mV
The overdischarge hysteresis voltage can be selected from the range 0.0 V to 0.7 V in 100 mV step.
*2.
Overdischarge release voltage= Overdischarge detection voltage
+
Overdischarge hysteresis voltage
(where overdischarge release voltage>3.4 V is prohibited.)
•
Overcurrent 1 detection voltage
0.05 V to 0.3 V (10 mV step) Accuracy:
±15
mV
•
Overcurrent 2 detection voltage
0. 5 V (fixed)
Accuracy:
±100
mV
(2) High voltage device is used for charger connection pins
(VM and CO pins: absolute maximum rating
=
28 V)
(3) Delay times (overcharge: t
CU
, overdischarge: t
DL
, overcurrent 1: t
lOV1
, overcurrent 2: t
lOV2
) are generated
by an internal circuit. No external capacitor is necessary.
Accuracy:
±20%
(4) Three-step overcurrent detection circuit is included.
(overcurrent 1, overcurrent 2 and load short-circuiting)
(5) Either charge function or charge inhibition function for 0 V battery can be selected.
(6) Charger detection function and abnormal charge current detection function
•
The overdischarge hysteresis is released by detecting negative voltage at the VM pin (−0.7 V typ.).
(Charger detection function)
•
When the output voltage of the DO pin is high and the voltage at the VM pin is equal to or lower than
the charger detection voltage (−0.7 V typ.), the output voltage of the CO pin goes low.
(Abnormal charge current detection function)
(7) Low current consumption
•
Operation
3.5
µA
typ.
7.0
µA
max.
•
Power-down
0.1
µA
max.
(8) Wide operating temperature range:
−40°C
to
+85°C
(9) Small package
SOT-23-6, 6-Pin SNB(B)
Applications
•
Lithium-ion rechargeable battery packs
•
Lithium polymer rechargeable battery packs
Package
•
SOT-23-6
(PKG drawing code: MP006-A)
•
6-Pin SNB(B) (PKG drawing code: BD006-A)
Seiko Instruments Inc.
1
Rev.1.4
_10
Selection Guide
BATTERY PROTECTION IC for SINGLE-CELL PACK
S-8261 Series
1. Product name selection guide
S−8261A
xx
xx
−
xxx
−
xx
IC direction in tape specifications
T2: SOT-23-6
TF: 6-Pin SNB(B)
Product name (abbreviation)
*2
*1
Package name (abbreviation)
MD: SOT-23-6
BD: 6-Pin SNB(B)
Serial code
Assigned from AA to ZZ in alphabetical order
*1.
Refer to the taping specifications at the end of this book.
*2.
Refer to the product name list.
Seiko Instruments Inc.
3
BATTERY PROTECTION IC for SINGLE-CELL PACK
S-8261 Series
2. Product name list
Model No.
S-8261AAGMD-G2G-T2
S-8261AAHMD-G2H-T2
S-8261AAJBD-G2J-TF
S-8261AAJMD-G2J-T2
S-8261AALMD-G2L-T2
S-8261AAMMD-G2M-T2
S-8261AANMD-G2N-T2
S-8261AAOMD-G2O-T2
S-8261AAPMD-G2P-T2
S-8261AARBD-G2R-TF
S-8261AARMD-G2R-T2
S-8261AASMD-G2S-T2
S-8261AAUMD-G2U-T2
S-8261AAVBD-G2V-TF
S-8261AAXMD-G2X-T2
S-8261AAZMD-G2Z-T2
S-8261ABAMD-G3A-T2
S-8261ABBMD-G3B-T2
S-8261ABCMD-G3C-T2
S-8261ABDBD-G3D-TF
S-8261ABEBD-G3E-TF
S-8261ABGBD-G3G-TF
S-8261ABHBD-G3H-TF
S-8261ABIBD-G3I-TF
S-8261ABJMD-G3J-T2
Overcharge
detection
voltage [V
CU
]
4.28 V
4.28 V
4.325 V
4.325 V
4.30 V
4.30 V
4.275 V
4.28 V
4.325 V
4.28 V
4.28 V
4.28 V
4.275 V
4.3 V
4.35 V
4.28 V
4.35 V
4.275 V
4.30 V
4.28 V
4.275 V
4.275 V
4.20 V
4.275 V
4.28 V
Overcharge
hysteresis
voltage [V
HC
]
0.2 V
0.2 V
0.25 V
0.25 V
0.1 V
0.1 V
0.1 V
0.2 V
0.25 V
0.2 V
0.2 V
0.2 V
0.1 V
0.2 V
0.1 V
0.25 V
0.2 V
0.2 V
0.2 V
0.2 V
0.2 V
0.2 V
0V
0.2 V
0.2 V
Overdischarge Overdischarge Overcurrent 1
detection
hysteresis
detection
voltage [V
DL
]
voltage [V
HD
] voltage [V
IOV1
]
2.3 V
0V
0.16 V
2.3 V
0V
0.08 V
2.5 V
0.4 V
0.15 V
2.5 V
0.4 V
0.15 V
2.3 V
0V
0.08 V
2.3 V
0V
0.2 V
2.3 V
0.1 V
0.1 V
2.3 V
0V
0.13 V
2.5 V
0.4 V
0.1 V
2.3 V
0V
0.1 V
2.3 V
0V
0.1 V
2.3 V
0V
0.15 V
2.3 V
0.1 V
0.1 V
2.3 V
0V
0.13 V
2.3 V
0.1 V
0.1 V
2.5 V
0.4 V
0.1 V
2.5 V
0V
0.2 V
2.3 V
0V
0.13 V
2.3 V
0V
0.13 V
2.3 V
0V
0.13 V
2.3 V
0V
0.1 V
2.3 V
0V
0.1 V
2.3 V
0V
0.1 V
2.3 V
0V
0.2 V
3.0 V
0V
0.08 V
Rev.1.4
_10
0 V battery
charge
function
Available
Available
Unavailable
Unavailable
Unavailable
Unavailable
Available
Unavailable
Unavailable
Available
Available
Unavailable
Available
Available
Available
Unavailable
Available
Available
Available
Available
Available
Unavailable
Available
Unavailable
Available
Overcharge
Overdischarge Overcurrent 1
detection delay detection delay detection delay
time
time
time
S-8261AAGMD-G2G-T2
1.2 s
144 ms
9 ms
S-8261AAHMD-G2H-T2
1.2 s
144 ms
9 ms
S-8261AAJBD-G2J-TF
1.2 s
144 ms
9 ms
S-8261AAJMD-G2J-T2
1.2 s
144 ms
9 ms
S-8261AALMD-G2L-T2
1.2 s
144 ms
9 ms
S-8261AAMMD-G2M-T2
1.2 s
144 ms
9 ms
S-8261AANMD-G2N-T2
1.2 s
144 ms
9 ms
S-8261AAOMD-G2O-T2
1.2 s
144 ms
9 ms
S-8261AAPMD-G2P-T2
1.2 s
144 ms
9 ms
S-8261AARBD-G2R-TF
1.2 s
144 ms
9 ms
S-8261AARMD-G2R-T2
1.2 s
144 ms
9 ms
S-8261AASMD-G2S-T2
1.2 s
144 ms
4.5 ms
S-8261AAUMD-G2U-T2
4.6 s
144 ms
9 ms
S-8261AAVBD-G2V-TF
4.6 s
144 ms
9 ms
S-8261AAXMD-G2X-T2
4.6 s
144 ms
9 ms
S-8261AAZMD-G2Z-T2
1.2 s
144 ms
9 ms
S-8261ABAMD-G3A-T2
4.6 s
144 ms
9 ms
S-8261ABBMD-G3B-T2
1.2 s
144 ms
9 ms
S-8261ABCMD-G3C-T2
1.2 s
144 ms
9 ms
S-8261ABDBD-G3D-TF
1.84 s
115 ms
7.2 ms
S-8261ABEBD-G3E-TF
1.2 s
144 ms
9 ms
S-8261ABGBD-G3G-TF
1.2 s
36 ms
9 ms
S-8261ABHBD-G3H-TF
0.3 s
36 ms
18 ms
S-8261ABIBD-G3I-TF
1.2 s
36 ms
9 ms
S-8261ABJMD-G3J-T2
1.2 s
36 ms
9 ms
It is possible to change the detection voltages of the product other than above.
The delay times can also be changed within the range listed bellow.
For details, please contact our sales office.
Model No.
Delay time
Overcharge detection delay time
Overdischarge detection delay time
Overcurrent 1 detection delay time
Remark
Symbol
t
CU
t
DL
t
lOV1
Selection range
0.15 s
1.2 s
4.6 s
36 ms
144 ms
290 ms
4.5 ms
9 ms
18 ms
Remarks
Choose from the left.
Choose from the left.
Choose from the left.
Values surrounded by bold lines are used in standard products.
4
Seiko Instruments Inc.
Rev.1.4
_10
Pin Assignment
BATTERY PROTECTION IC for SINGLE-CELL PACK
S-8261 Series
Pin No.
6
5 4
Symbol
DO
VM
CO
DP
VDD
VSS
Symbol
CO
VM
DO
VSS
DP
VDD
1
2
3
SOT-23-6
Top view
1
2
3
Figure 2
4
5
6
Pin No.
Description
FET gate control pin for discharge
(CMOS output)
Voltage detection pin between VM and VSS
(Overcurrent detection pin)
FET gate control pin for charge
(CMOS output)
Test pin for delay time measurement
Positive power input pin
Negative power input pin
Description
FET gate control pin for charge
(CMOS output)
Voltage detection pin between VM and VSS
(Overcurrent detection pin)
FET gate control pin for discharge
(CMOS output)
Negative power input pin
Test pin for delay time measurement
Positive power input pin
6 5 4
6-Pin SNB(B)
Top view
1
Figure 3
2
3
1
2
3
4
5
6
Absolute Maximum Ratings
(Ta= 25°C unless otherwise specified)
Parameter
Symbol
Applied pin
Rating
Unit
*1
Input voltage between VDD and VSS
VDD
V
DS
V
V
SS
−0.3
to V
SS
+12
V
Input pin voltage for VM
V
VM
VM
V
DD
−28
to V
DD
+0.3
Output pin voltage for CO
V
CO
CO
V
V
VM
−0.3
to V
DD
+0.3
Output pin voltage for DO
V
DO
DO
V
V
SS
−0.3
to V
DD
+0.3
Power dissipation
SOT-23-6
P
D
250
mW
6-pin SNB(B)
P
D
90
mW
Operating temperature range
T
opr
−40
to
+85
°C
Storage temperature range
T
stg
−55
to
+125
°C
Caution The absolute maximum ratings are rated values exceeding which the product could
suffer physical damage. These values must therefore not be exceeded under any
conditions.
*1.
Do not apply pulse-like noise of
µs
order exceeding the above input voltage (V
SS
+12
V).
causes damage to the IC.
The noise
Seiko Instruments Inc.
5
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