SMA6F
High junction temperature Transil™
Features
■
■
ECOPACK
®
2 compliant product
Peak pulse power:
– 600 W (10/1000 µs)
– 4 kW (8/20 µs)
Stand off voltage: 5, 12 or 13 V
Unidirectional type
Low clamping voltage versus standard series
Low leakage current, 0.2 µA at 25 °C
Operating T
j
max: 175 °C
JEDEC registered package outline
K
Unidirectional
■
■
■
■
■
■
A
SMAflat
Complies with the following standards
■
IEC 61000-4-2 level 4:
– 15 kV (air discharge)
– 8 kV (contact discharge)
MIL STD 883G-Method 3015-7: class3B
– 25 kV (human body model)
■
Description
The SMA6F Transil series has been designed to
protect sensitive equipment against electro-static
discharges according to IEC 61000-4-2, MIL STD
883 Method 3015, and electrical over stress such
as IEC 61000-4-4 and 5. They are generally for
surges below 600 W 10/1000 µs.
This planar technology makes it compatible with
high-end equipment and SMPS where low
leakage current and high junction temperature are
required to provide reliability and stability over
time. Their low clamping voltages provides a
better safety margin to protect sensitive circuits
with extended life time expectancy.
Packaged in SMAflat non exposed pad, this
minimizes PCB space consumption (footprint in
accordance with IPC 7531 standard).
TM: Transil is a trademark of STMicroelectronics
September 2011
Doc ID 14996 Rev 2
1/9
www.st.com
9
Characteristics
SMA6F
1
Table 1.
Symbol
P
PP
P
I
FSM
T
stg
T
j
T
L
Characteristics
Absolute ratings (T
amb
= 25 °C)
Parameter
Peak pulse power dissipation
(1)
Power dissipation on infinite heatsink
Non repetitive surge peak forward current for
unidirectional types
Storage temperature range
Operating junction temperature range
Maximum lead temperature for soldering during 10 s
T
j
initial = T
amb
T
lead
= 55 °C
t
p
= 10 ms
T
j
initial = T
amb
Value
600
6
60
-65 to +175
-55 to +175
260
Unit
W
W
A
°C
°C
°C
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Table 2.
Symbol
R
th (j-l)
Thermal resistance
Parameter
Junction to leads
Value
20
Unit
°C/W
Table 3.
Symbol
V
RM
V
BR
V
CL
I
RM
I
PP
αT
V
F
R
D
Electrical characteristics - definitions (T
amb
= 25 °C)
Parameter
Stand-off voltage
I
F
I
Breakdown voltage
Clamping voltage
Leakage current @ V
RM
Peak pulse current
Voltage temperature coefficient
Forward voltage drop
Dynamic resistance
I
PP
V
CL
V
BR
V
RM
I
RM
I
R
V
F
V
2/9
Doc ID 14996 Rev 2
SMA6F
Table 4.
Electrical characteristics - values (T
amb
= 25 °C)
I
RM
max@V
RM
Type
25 °C 85 °C
µA (Max)
SMA6F5.0A
SMA6F12AVCL
SMA6F13A
10
0.2
0.2
50
1
1
V
min
V
BR
@I
R(1)
typ max
V
mA
Characteristics
V
CL
@I
PP
R
D(2)
V
CL
@I
PP
R
D(2)
10/1000 µs 10/1000 µs 8/20 µs 8/20 µs
max
V
9.2
18.5
20.4
A
68
31
29
Ω
0.029
0.135
0.154
max
V
A
Ω
0.021
0.055
0.054
αT
(3)
max
10-4/°C
5.7
7.8
8.3
5.0 6.40 6.74 7.07 10
12 13.2 13.7 14.3
13 14.4 15.2 15.9
1
1
13.4 298
22.9 157
23.9 147
1. Pulse test: t
p
<50ms.
2. To calculate maximum clamping voltage at other surge currents, use the following formula
V
CLmax
= R
D
x I
PP
+ V
BRmax
3. To calculate V
BR
versus junction temperature, use the following formula:
V
BR
@ T
j
= V
BR
@ 25 °C x (1 +
αT
x (T
j
- 25))
Figure 1.
Definition of I
pp
pulse
%I
PP
100
Repetitive peak pulse current
tr = rise time (µs)
tp = pulse duration time (µs)
50
0
t
r
t
p
t
Figure 2.
Relative peak power dissipation
versus initial junction temperature
Figure 3.
Peak pulse power versus
exponential pulse duration
(T
j
initial = 25 °C)
P
PP
[T
j
initial] / P
PP
[T
j
initial=25°C]
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
25
50
75
100
125
150
175
200
T
j
initial (°C)
P
PP
(kW)
100.0
T
j
initial = 25 °C
10.0
1.0
t
p
(ms)
0.1
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
Doc ID 14996 Rev 2
3/9
Characteristics
Figure 4.
Clamping voltage versus peak pulse current
(exponential waveform, maximum values)
SMA6F
1000.0
IPP(A)
T
j
initial=25 °C
SMA6F5.0A
SMA6F12AVCL
100.0
SMA6F13A
10.0
1.0
tp = 8/20 µs
tp = 10/1000 µs
VCL(V)
0.1
5
10
15
20
25
Figure 5.
Junction capacitance versus reverse applied voltage (typical values)
10000
C(pF)
F=1 MHz
V
OSC
=30 mV
RMS
T
j
=25 °C
SMA6F5.0A
1000
SMA6F12AVCL
SMA6F13A
V
R
(V)
100
1
10
100
4/9
Doc ID 14996 Rev 2
SMA6F
Characteristics
Figure 6.
Peak forward voltage drop versus
peak forward current (typical
values)
Figure 7.
Relative variation of thermal
impedance junction to ambient
versus pulse duration
I
FM
(A)
1.0E+02
1.00
Z
th(j-a)
/R
th(j-a)
On recommended pad layout.
Printed circuit board, FR4
copper thickness = 35 µm
copper surface = 1 cm²
1.0E+01
0.10
1.0E+00
T
j
=125 °C
T
j
=25 °C
0.01
1.0E-01
V
FM
(V)
1.0E-02
0.0
0.5
1.0
1.5
2.0
t
p
(S)
0.00
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
Figure 8.
Thermal resistance junction to
ambient versus copper surface
under each lead
Figure 9.
Leakage current versus junction
temperature (typical values)
R
th(j-a)
(°C/W)
200
180
160
140
120
100
80
60
40
20
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
1.E+02
Printed circuit board, FR4
copper thickness = 35 µm
1.E+04
I
R
(nA)
1.E+03
V
BR
=11.7V
V
BR
>11.7V
1.E+01
V
R
=V
RM
S
CU
(cm
2
)
1.E+00
25
50
75
T
j
(°C)
100
125
150
175
Doc ID 14996 Rev 2
5/9
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