RHF43B
RAD-hardened
precision bipolar single operational amplifier
Features
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■
■
■
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High immunity to radiations, 300kRad TID; SEL
immune at 68MeV/cm²/mg LET ions.
Rail-to-rail input/output
8MHz gain bandwidth at 16V
Stable for gain
≥
5
Low input offset voltage: 100µV typ
Supply current: 2.2mA typ
Operating from 3V to 16V
Input bias current: 30nA typ
ESD internal protection
≥
2kV
Latch-up immunity: 200mA
Soon RHA QML-V qualified with smd
n° 5962-062xx
NC
IN -
IN +
-VCC
VDD
4
5
1
8
NC
+VCC
VCC
OUT
NC
Ceramic Flat-8
Description
The RHF43B is a precision bipolar operational
amplifier available in hermetic 8-pin flat package
and in die form. ln addition to its low offset
voltage, rail-to-rail feature, wide supply voltage,
the RHF43B is designed for increased tolerance
to radiation. Its intrinsic ELDRS-free rad-hard
design allows this product to be used in space
environment and in applications operating in
harsh environments.
Applications
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Space probes and satellites
Defense systems
Scientific instrumentation
Nuclear systems
January 2008
Rev 3
1/12
www.st.com
12
Absolute maximum ratings and operating conditions
RHF43B
1
Absolute maximum ratings and operating conditions
Table 1.
Symbol
V
CC
V
id
V
in
I
IN
T
stg
R
thja
R
thjc
T
j
ESD
Supply voltage
(1)
Differential input voltage
(2)
Input voltage range
(3)
Input current
Storage temperature
Thermal resistance junction to ambient
(4)(5)
Thermal resistance junction to case
(4)(5)
Maximum junction temperature
HBM: human body model
(6)
Latch-up immunity
Lead temperature (soldering, 10 sec)
Radiation related parameters
Low dose rate of 0.01 rad.sec
-1
High dose rate of 50-300 rad.sec
-1
Heavy ion latch-up (SEL) immune with heavy ions
characterized by:
Neutron immunity
1. All values, except differential voltage are with respect to network terminal.
2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal.
3. The magnitude of input and output terminal must never exceed V
CC
+0.3V.
4. Short-circuits can cause excessive heating and destructive dissipation.
5. R
th
are typical values.
6. Human body model: 100pF discharged through a 1.5kΩ resistor between two pins of the device, done for
all couples of pin combinations with other pins floating.
Absolute maximum ratings (AMR)
Parameter
Value
18
±9
±1.2
V
DD
-0.3 to 16
45
-65 to +150
125
80
150
2
200
260
Unit
V
V
V
mA
°C
°C/W
°C/W
°C
kV
mA
°C
300
300
68
2
+14
kRad
kRad
MeV.cm
-2
.mg
n.cm
-2
Table 2.
Symbol
V
CC
V
icm
T
oper
Operating conditions
Parameter
Supply voltage
Common mode input voltage range
Operating free air temperature range
Value
3 to 16
V
DD
to V
CC
-55 to +125
Unit
V
V
°C
2/12
RHF43B
Electrical characteristics
2
Table 3.
Symbol
Electrical characteristics
V
CC
= +16V, V
DD
= 0V, V
icm
= V
CC
/2, T
amb
= 25°C, R
L
connected to V
CC
/2 (unless
otherwise specified)
Parameter
Test conditions
Min.
Typ.
Max.
Unit
DC performance
T= 25°C
V
io
DV
io
I
ib
DI
ib
I
io
Offset voltage
T
min
< T
op
< T
max
Input offset voltage drift
Input bias current
Input offset current temperature
drift
Input offset current
(V
out
= V
CC
/2)
Common mode rejection ratio
V
icm
= V
CC
/2, T = 25°C
T
min
< T
op
< T
max
0 < V
icm
< 16V
T
min
< T
op
< T
max
3V < V
CC
<16V, V
icm
=V
CC
/2
T
min
< T
op
< T
max
R
L
= 10kΩ V
out
= 0.5V to 15.5V
,
T
min
< T
op
< T
max
R
L
= 1kΩ connected to V
CC
/2
T
min
< T
op
< T
max
R
L
= 10kΩ connected to V
CC
/2
T
min
< T
op
< T
max
R
L
= 1kΩ connected to V
CC
/2
T
min.
< T
op
< T
max.
R
L
= 10kΩ connected to V
CC
/2
T
min
< T
op
< T
max
Output sink current
I
out
Output source current
I
CC
Supply current
V
out
= V
CC
T
min
< T
op
< T
max
V
out
= V
DD
T
min
< T
op
< T
max
No load
T
min
< T
op
< T
max
20
15
15
10
72
72
90
80
74
60
15.7
15.6
15.9
15.8
V
icm
= V
CC
/2, T = 25°C
T
min
< T
op
< T
max
1
30
60
100
500
μV/°C
nA
pA/°C
15
35
nA
dB
100
300
µV
100
1
CMR
110
120
85
15.8
15.96
0.1
0.04
30
0.2
0.3
0.06
0.1
SVR
A
VD
Supply rejection ratio
Large signal voltage gain
dB
dB
V
V
V
V
V
OH
High level output voltage
V
OL
Low level output voltage
mA
25
2.5
2.9
mA
AC performance
GBP
F
u
φm
Gain bandwidth product
Unity gain frequency
Phase margin
R
L
= 1kΩ C
L
= 100pF, f= 100kHz
,
T
min
< T
op
< T
max
R
L
= 1kΩ C
L
= 100pF
,
R
L
= 1kΩ, C
L
= 100pF, G=5
6
3.5
8
5
50
MHz
MHz
Degrees
3/12
Electrical characteristics
Table 3.
Symbol
SR
e
n
THD+e
n
Slew rate
Equivalent input noise voltage
Total harmonic distortion
RHF43B
V
CC
= +16V, V
DD
= 0V, V
icm
= V
CC
/2, T
amb
= 25°C, R
L
connected to V
CC
/2 (unless
otherwise specified) (continued)
Parameter
Test conditions
R
L
= 1kΩ, C
L
= 100pF
T
min
< T
op
< T
max
f = 1kHz
V
out
= (V
CC
-1V)/5, G= -5.1,
V
icm
=V
CC
/2
Min.
2
1.7
Typ.
3
Max.
Unit
V/μs
nV
-----------
-
Hz
8
0.01
%
4/12
RHF43B
Table 4.
Symbol
DC performance
T=25°C
V
io
DV
io
I
ib
DI
ib
I
io
CMR
A
VD
Offset voltage
T
min
< T
op
< T
max
Input offset voltage drift
Input bias current
V
CC
= 4V, V
icm
= V
CC
/2, T= 25°C
T
min
< T
op
< T
max
Electrical characteristics
V
CC
= +3V, V
DD
= 0V, V
icm
= V
CC
/2, T
amb
= 25°C, R
L
connected to V
CC
/2 (unless
otherwise specified)
Parameter
Test conditions
Min.
Typ.
Max.
Unit
100
300
µV
500
1
30
60
100
μV/°C
nA
pA/°C
15
35
nA
dB
dB
V
V
0.1
0.2
0.06
0.1
V
V
Input offset current temperature
V
CC
= 4V, V
icm
= V
CC
/2
drift
Input offset current
(V
out
= V
cc
/2)
Common mode rejection ratio
Large signal voltage gain
V
CC
= 4V, V
icm
= V
CC
/2, T= 25°C
T
min
< T
op
< T
max
0 < V
icm
< 3V
T
min
< T
op
< T
max
R
L
= 10kΩ V
out
= 0.5V to 2.5V
,
T
min
< T
op
< T
max
R
L
= 1kΩ connected to V
CC
/2
T
min
< T
op
< T
max
R
L
= 10kΩ connected to V
CC
/2
T
min
< T
op
< T
max
R
L
= 1kΩ connected to V
CC
/2
T
min
< T
op
< T
max
R
L
= 10kΩ connected to V
CC
/2
T
min
< T
op
< T
max
Output sink current
V
out
= V
CC
T
min
< T
op
< T
max
V
out
= V
DD
T
min
< T
op
< T
max
No load
T
min
< T
op
< T
max
20
15
15
10
72
72
74
60
2.9
2.8
2.94
2.9
100
1
90
85
2.95
2.98
0.05
0.02
30
V
OH
High level output voltage
V
OL
Low level output voltage
I
out
Output source current
I
CC
Supply current per amplifier
mA
25
2.2
2.6
mA
AC performance
GBP
F
u
φm
SR
e
n
THD+e
n
Gain bandwidth product
Unity gain frequency
Phase margin
Slew rate
Equivalent input noise voltage
Total harmonic distortion
R
L
= 1kΩ C
L
= 100pF, f = 100kHz
,
T
min
< T
op
< T
max
R
L
= 1kΩ C
L
= 100pF
,
R
L
= 1kΩ, C
L
= 100pF, G=5
R
L
= 1kΩ, C
L
= 100pF
T
min
< T
op
< T
max
f = 1kHz
V
out
= (V
CC
-1V)/5, G= -5.1,
V
icm
=V
CC
/2
2
1.7
6
3.5
7.5
5
50
2.7
MHz
MHz
Degrees
V/µs
nV
-----------
-
Hz
8
0.01
%
5/12