Datasheet> 器件分类 > 分立半导体> 晶体管> SIHFR110TR-GE3

SIHFR110TR-GE3: 产品描述TRANSISTOR 4.3 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power; 产品类别分立半导体晶体管; 文件大小1MB，共11页; 制造商Vishay(威世); 官网地址http://www.vishay.com

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SIHFR110TR-GE3概述

TRANSISTOR 4.3 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power

SIHFR110TR-GE3规格参数

参数名称	属性值
零件包装代码	TO-252AA
包装说明	SMALL OUTLINE, R-PSSO-G2
针数	3
Reach Compliance Code	unknown
ECCN代码	EAR99
雪崩能效等级（Eas）	75 mJ
外壳连接	DRAIN
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	100 V
最大漏极电流 (Abs) (ID)	4.3 A
最大漏极电流 (ID)	4.3 A
最大漏源导通电阻	0.54 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-252AA
JESD-30 代码	R-PSSO-G2
元件数量	1
端子数量	2
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	25 W
最大脉冲漏极电流 (IDM)	17 A
认证状态	Not Qualified
表面贴装	YES
端子形式	GULL WING
端子位置	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON
Base Number Matches	1

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IRFR110, SiHFR110

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

(V)

DS(on)

(Ω)

(Max.) (nC)

(nC)

Configuration

= 10 V

8.3

2.3

3.8

Single

FEATURES

100

0.54

•

Halogen-free According to IEC 61249-2-21

Definition

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Surface Mount (IRFR110, SiHFR110)

• Available in Tape and Reel

• Fast Switching

• Ease of Paralleling

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

DPAK

(TO-252)

N-Channel MOSFET

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. Power

dissipation levels up to 1.5 W are possible in typical surface

mount applications.

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

SnPb

Note

a. See device orientation.

DPAK (TO-252)

SiHFR110-GE3

IRFR110PbF

SiHFR110-E3

IRFR110

SiHFR110

DPAK (TO-252)

SiHFR110TRL-GE3

IRFR110TRLPbF

SiHFR110TL-E3

IRFR110TRL

SiHFR110TL

DPAK (TO-252)

SiHFR110TR-GE3

IRFR110TRPbF

SiHFR110T-E3

IRFR110TR

SiHFR110T

DPAK (TO-252)

SiHFR110TRR-GE3

IRFR110TRRPbF

SiHFR110TR-E3

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Current

at 10 V

= 25 °C

= 100 °C

SYMBOL

LIMIT

100

± 20

4.3

2.7

0.20

0.020

4.3

2.5

5.5

- 55 to + 150

260

UNIT

Pulsed Drain

Linear Derating Factor

Linear Derating Factor (PCB Mount)

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

= 25 °C

Maximum Power Dissipation (PCB Mount)

= 25 °C

dV/dt

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

, T

stg

Soldering Recommendations (Peak Temperature)

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

= 25 V, starting T

= 25 °C, L = 8.1 mH, R

= 25

Ω,

= 4.3 A (see fig. 12).

c. I

≤

5.6 A, dI/dt

≤

75 A/μs, V

≤

, T

≤

150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91265

S10-1122-Rev. E, 10-May-10

W/°C

V/ns

°C

www.vishay.com

SIHFR110TR-GE3相似产品对比

	SIHFR110TR-GE3	SIHFR110TRL-GE3	SIHFR110TRR-GE3	SIHFR110-GE3
描述	TRANSISTOR 4.3 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power	TRANSISTOR 4.3 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power	TRANSISTOR 4.3 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power	TRANSISTOR 4.3 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power
零件包装代码	TO-252AA	TO-252AA	TO-252AA	TO-252AA
包装说明	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
针数	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99
雪崩能效等级（Eas）	75 mJ	75 mJ	75 mJ	75 mJ
外壳连接	DRAIN	DRAIN	DRAIN	DRAIN
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	100 V	100 V	100 V	100 V
最大漏极电流 (Abs) (ID)	4.3 A	4.3 A	4.3 A	4.3 A
最大漏极电流 (ID)	4.3 A	4.3 A	4.3 A	4.3 A
最大漏源导通电阻	0.54 Ω	0.54 Ω	0.54 Ω	0.54 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-252AA	TO-252AA	TO-252AA	TO-252AA
JESD-30 代码	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
元件数量	1	1	1	1
端子数量	2	2	2	2
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大功率耗散 (Abs)	25 W	25 W	25 W	25 W
最大脉冲漏极电流 (IDM)	17 A	17 A	17 A	17 A
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES
端子形式	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	SINGLE	SINGLE	SINGLE	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	-

SIHFR110TR-GE3

SIHFR110TR-GE3概述

SIHFR110TR-GE3规格参数

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