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PF38F2040W0YBQ0

产品描述Memory Circuit, Flash+PSRAM, 4MX16, CMOS, PBGA88, 8 X 10 MM, 1.20 MM HEIGHT, STACK, CSP-88
产品类别存储    存储   
文件大小706KB,共54页
制造商Numonyx ( Micron )
官网地址https://www.micron.com
标准
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PF38F2040W0YBQ0概述

Memory Circuit, Flash+PSRAM, 4MX16, CMOS, PBGA88, 8 X 10 MM, 1.20 MM HEIGHT, STACK, CSP-88

PF38F2040W0YBQ0规格参数

参数名称属性值
是否Rohs认证符合
零件包装代码BGA
包装说明TFBGA, BGA88,8X12,32
针数88
Reach Compliance Codeunknown
最长访问时间70 ns
其他特性CONTAINS 32 MBIT SRAM, ALSO CONTAINS 64 MBIT FLASH
JESD-30 代码R-PBGA-B88
JESD-609代码e1
长度10 mm
内存密度67108864 bit
内存集成电路类型MEMORY CIRCUIT
内存宽度16
混合内存类型FLASH+PSRAM
湿度敏感等级3
功能数量1
端子数量88
字数4194304 words
字数代码4000000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-25 °C
组织4MX16
封装主体材料PLASTIC/EPOXY
封装代码TFBGA
封装等效代码BGA88,8X12,32
封装形状RECTANGULAR
封装形式GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度)260
电源1.8 V
认证状态Not Qualified
座面最大高度1.2 mm
最大待机电流0.00011 A
最大压摆率0.035 mA
最大供电电压 (Vsup)1.95 V
最小供电电压 (Vsup)1.7 V
标称供电电压 (Vsup)1.8 V
表面贴装YES
技术CMOS
温度等级OTHER
端子面层TIN SILVER COPPER
端子形式BALL
端子节距0.8 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间40
宽度8 mm
Base Number Matches1

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Intel
®
Wireless Flash Memory
(W18/W30 SCSP)
32WQ and 64WQ Family with Asynchronous RAM
Datasheet
Product Features
Device Architecture
— Flash Density: 32-Mbit, 64-Mbit
— Async PSRAM Density: 8-, 16-, 32-
Mbit; Async SRAM Density: 4-, 8-, 16-
Mbit
— Top, Bottom or Dual flash parameter
configuration
Device Voltage
— Flash V
CC
= 1.8 V; Flash V
CCQ
= 1.8 V
or 3.0 V
— RAM V
CC
= 3.0 V; RAM V
CCQ
= 1.8 V
or 3.0 V
Device Packaging
— 88 balls (8 x 10 active ball matrix);
Area: 8x10 mm; Height: 1.2 mm to 1.4
mm
PSRAM Performance
— 70 ns initial access, 25 ns async page
reads at 1.8 V I/O
— 70 ns initial access async PSRAM at
1.8V I/O
— 88 ns initial access, 30 ns async page
reads at 1.8 V I/O
— 85 ns initial access, 35 ns async page
reads at 3.0 V I/O
— 70 ns initial access, 25 ns async page
reads at 3.0 V I/O
SRAM Performance
— 70 ns initial access at 1.8 V or 3.0 V I/O
Flash Performance
— 65 ns initial access at 1.8 V I/O
— 70 ns initial access at 3.0 V I/O
— 25 ns async page at 1.8 V or 3.0 V I/O
— 14 ns sync reads (t
CHQV
) at 1.8 V I/O
— 20 ns sync reads (t
CHQV
) at 3.0 V I/O
— Enhanced Factory Programming:
3.10 µs/Word (Typ)
Flash Architecture
— Read-While-Write/Erase
— Asymmetrical blocking structure
— 4-KWord parameter blocks (Top or
Bottom); 32-KWord main blocks
— 4-Mbit partition size
— 128-bit One-Time Programmable (OTP)
Protection Register
— Zero-latency block locking
— Absolute write protection with block
lock using F-VPP and F-WP#
Flash Software
— Intel
®
Flash Data Integrator (FDI) and
Common Flash Interface (CFI)
Quality and Reliability
— Extended Temperature: –25 °C to +85 °C
— Minimum 100K flash block erase cycle
— 90 nm ETOX™ IX flash technology
— 130 nm ETOX™ VIII flash technology
The Intel
®
Wireless Flash Memory (W18/W30 SCSP) family offers various flash plus static
RAM combinations in a common package footprint. The flash memory features 1.8 V low-
power operations with flexible, multi-partition, dual-operation Read-While-Write / Read-While-
Erase, asynchronous, and synchronous reads. This SCSP device integrates up to two flash die,
one PSRAM die, and one SRAM die in a low-profile package compatible with other SCSP
families with QUAD+ ballout.
Order Number: 251407, Revision: 010
18-Oct-2005

 
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