SS2H9 & SS2H10
Vishay Semiconductors
High-Voltage Surface Mount Schottky Rectifier
High Barrier Tecnology for improved high
temperature performance
Major Ratings and Characteristics
I
F(AV)
V
RRM
I
FSM
V
F
I
R
T
j
max.
2.0 A
90 V, 100 V
75 A
0.65 V
10 µA
175 °C
DO-214AA (SMB)
Features
•
•
•
•
•
•
•
•
•
Low profile package
Guardring for overvoltage protection
Ideal for automated placement
Low power losses, high efficiency
Low forward voltage drop
Low leakage current
High surge capability
Meets MSL level 1, per J-STD-020C
Solder Dip 260 °C 40 seconds
Typical Applications
For use in low voltage high frequency inverters, free-
wheeling, dc-to-dc converters, and polarity protection
applications
Maximum Ratings
Device marking code
T
A
= 25 °C unless otherwise specified#
Parameter
N
ew
Pr
od
uc
t
Mechanical Data
Symbol
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
I
RRM
dv/dt
T
J
, T
STG
SS2H9
MS9
90
90
90
2.0
75
1.0
10000
- 65 to + 175
SS2H10
MS10
100
100
100
Case:
DO-214AA (SMB)
Epoxy meets UL 94V-0 Flammability rating
Terminals:
Matte tin plated leads, solderable per J-
STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
Color band denotes the cathode end
Unit
V
V
V
A
A
A
V/µs
°C
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at: T
L
= 130 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse surge current at t
p
= 2.0 µs, 1 KHz
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
Document Number 88750
28-Jun-05
www.vishay.com
1
SS2H9 & SS2H10
Vishay Semiconductors
Electrical Characteristics
T
A
= 25 °C unless otherwise specified#
Parameter
Maximum instantaneous forward
voltage at
(1)
:
Maximum DC reverse current at
rated DC blocking voltage
(1)
Test condition
I
F
= 2.0 A,
I
F
= 2.0 A,
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
Symbol
V
F
I
R
SS2H9
0.79
0.65
10
4
SS2H10
Unit
V
µA
mA
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Thermal Characteristics
T
A
= 25 °C unless otherwise specified
Parameter
Maximum thermal resistance junction to lead T
L
= 25 °C
(1)
Notes:
(1) Units mounted on P.C.B. with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas
Symbol
R
θJA
R
θJL
SS2H9
80
25
SS2H10
Unit
°C/W
Ratings and Characteristics Curves
(T
A
= 25
°C
unless otherwise noted)
2.5
Average Forward Current, Amp
50
75
100
125
150
175
Average Forward Current (A)
100
2.0
75
1.5
50
1.0
25
0,5
0.0
25
0
1
10
Number
of Cycles at 60 Hz
100
Tl - Lead Temperature (°C)
Figure 1. Forward Currenrt Derating Curve
Figure 2. Max Non-Repetitive Peak FWD Surge Current
www.vishay.com
2
Document Number 88750
28-Jun-05
SS2H9 & SS2H10
Vishay Semiconductors
100
Instantaneous Forward Current
(A)
Tj=175°C
Tj=150°C
1000
10
1
Tj=125°C
Junction Capacitance (pF)
100
0.1
Tj=25°C
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1.4
10
0.1
1
10
100
Reverse
Voltage
(V)
Instantaneous Forward Voltage (V)
Figure 3. Typical Instanteous Forward Characteristics
Figure 5. Typical Junction Capacitance
10000
Tj=175°C
Instantaneous Reverse Current
(uA)
100
1000
100
10
1
0.1
0.01
0.001
10
20
30
40
Tj=150°C
Tj=125°C
Transient Impedance, °C/W
80
90
100
10
Tj=25°C
1
50
60
70
0.01
0.1
1
10
100
Percent of Rated Peak Reverse
Voltage
(%)
t, Pulse Duration, (sec.)
Figure 4. Typical Reverse Characteristics
Figure 6. Typical Transient Thermal Impedance Per Leg
Package outline dimensions in inches (millimeters)
Cathode Band
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
Mounting Pad Layout
0.85 MAX
(2.159 MAX)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.086 MIN
(2.18 MIN)
0.096 (2.44)
0.084 (2.13)
0.060 MIN
(1.52 MIN)
0.220 REF
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
0.008(0.2)
0 (0)
Document Number 88750
28-Jun-05
www.vishay.com
3
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