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© Nexperia B.V. (year). All rights reserved.
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PESD5V0L1ULD
Low capacitance unidirectional ESD protection diode
Rev. 1 — 19 April 2011
Product data sheet
1. Product profile
1.1 General description
Low capacitance unidirectional ElectroStatic Discharge (ESD) protection diode designed
to protect one signal line from the damage caused by ESD and other transients. The
device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD)
plastic package with visible and solderable side pads.
1.2 Features and benefits
ESD protection of one line
Ultra small SMD plastic package
Solderable side pads
Package height typ. 0.37 mm
Low diode capacitance C
d
= 25 pF
AEC-Q101 qualified
ESD protection up to 26 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); I
PP
= 3.5 A
Low clamping voltage: V
CL
= 12 V
1.3 Applications
Computers and peripherals
Audio and video equipment
Communication systems
Portable electronics
1.4 Quick reference data
Table 1.
Symbol
V
RWM
C
d
Quick reference data
Parameter
reverse standoff voltage
diode capacitance
f = 1 MHz; V
R
= 0 V
Conditions
Min
-
-
Typ
-
25
Max
5
30
Unit
V
pF
NXP Semiconductors
PESD5V0L1ULD
Low capacitance unidirectional ESD protection diode
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Graphic symbol
1
2
1
2
006aaa152
Transparent
top view
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Package
Name
PESD5V0L1ULD
-
Description
leadless ultra small plastic package; 2 terminals;
body 1
×
0.6
×
0.4 mm
Version
SOD882D
Type number
4. Marking
Table 4.
Marking codes
Marking code
[1]
1110 0000
Type number
PESD5V0L1ULD
[1]
For SOD882D binary marking code description, see
Figure 1.
4.1 Binary marking code description
CATHODE BAR
READING DIRECTION
VENDOR CODE
READING EXAMPLE:
0111
1011
MARKING CODE
(EXAMPLE)
READING DIRECTION
006aac477
Fig 1.
SOD882D binary marking code description
PESD5V0L1ULD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 19 April 2011
2 of 12
NXP Semiconductors
PESD5V0L1ULD
Low capacitance unidirectional ESD protection diode
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
PP
I
PP
T
j
T
amb
T
stg
[1]
[2]
Parameter
peak pulse power
peak pulse current
junction temperature
ambient temperature
storage temperature
Conditions
t
p
= 8/20
μs
t
p
= 8/20
μs
[1][2]
[1][2]
Min
-
-
-
−55
−65
Max
42
3.5
150
+150
+150
Unit
W
A
°C
°C
°C
Non-repetitive current pulse 8/20
μs
exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1 to 2.
Table 6.
ESD maximum ratings
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
ESD
Parameter
electrostatic
discharge voltage
Conditions
IEC 61000-4-2
(contact discharge)
machine model
MIL-STD-883
(human body model)
[1]
[2]
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1 to 2.
[2]
[1][2]
Min
-
-
-
Max
26
400
10
Unit
kV
V
kV
Table 7.
Standard
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
PESD5V0L1ULD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 19 April 2011
3 of 12
NXP Semiconductors
PESD5V0L1ULD
Low capacitance unidirectional ESD protection diode
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
μs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
μs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (μs)
40
30 ns
60 ns
t
0
Fig 2.
8/20
μs
pulse waveform according to
IEC 61000-4-5
Fig 3.
ESD pulse waveform according to
IEC 61000-4-2
6. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
V
RWM
I
RM
V
BR
C
d
V
CL
reverse standoff
voltage
reverse leakage current V
RWM
= 5 V
breakdown voltage
diode capacitance
clamping voltage
I
PP
= 1 A
I
PP
= 3.5 A
r
dyn
[1]
[2]
[3]
Conditions
Min
-
-
6.4
-
[1][2]
Typ
-
10
6.8
25
-
-
0.7
Max
5
100
7.2
30
9
12
-
Unit
V
nA
V
pF
V
V
Ω
I
R
= 5 mA
f = 1 MHz; V
R
= 0 V
-
-
[3]
dynamic resistance
I
R
= 10 A
-
Non-repetitive current pulse 8/20
μs
exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1 to 2.
Non-repetitive current pulse, Transmission Line Pulse (TLP) t
p
= 100 ns; square pulse;
ANS/IESD STM5-1-2008.
PESD5V0L1ULD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 19 April 2011
4 of 12
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