SiT5157
60 MHz to 220 MHz, ±0.5 to ±2.5 ppm, Elite Platform™ Super-TCXO
Description
The
SiT5157
is a ±0.5 to ±2.5 ppm MEMS Super-TCXO
Features
that is engineered for best dynamic performance. It is ideal
for high reliability telecom, wireless and networking,
industrial, precision GNSS and audio/video applications.
Leveraging SiTime’s unique DualMEMS™ temperature
sensing and TurboCompensation™ technologies, the
SiT5157 delivers the best dynamic performance for timing
stability in the presence of environmental stressors due to
air flow, temperature perturbation, vibration, shock, and
electromagnetic interference. This device also integrates
multiple on-chip regulators to filter power supply noise,
eliminating the need for a dedicated external LDO.
The SiT5157 offers three device configurations that can be
ordered using
Ordering Codes
for:
1) TCXO with non-pullable output frequency,
2) VCTCXO allowing voltage control of output
frequency, and
3) DCTCXO, enabling digital control of output frequency
2
using an I C interface, pullable to 5 ppt (parts per
trillion) resolution.
The SiT5157 can be factory programmed for any
combination of frequency, stability, voltage, and pull range.
Programmability enables designers to optimize clock
configurations while eliminating long lead times and
customization costs associated with quartz devices where
each frequency is custom built.
Refer to
Manufacturing Guideline
for proper reflow profile
and PCB cleaning recommendations to ensure best
performance.
Output 60–189 MHz, and 200–220 MHz, in 1 Hz steps
Factory programmable options for low lead time
Best dynamic stability under airflow, thermal shock
±0.5 ppm stability across temperature
±15 ppb/C typical frequency slope (ΔF/ΔT)
-40°C to +105°C operating temperature
No activity dips or micro jumps
Resistant to shock, vibration and board bending
On-chip regulators eliminate the need for external LDOs
2
Digital frequency pulling (DCTCXO) via I C
Digital control of output frequency and pull range
Up to
±3200
ppm pull range
Frequency pull resolution down to 5 ppt
2.5V, 2.8V, 3.0V and 3.3V supply voltage
LVCMOS output
RoHS and REACH compliant
Pb-free, Halogen-free, Antimony-free
Applications
Precision GNSS systems
Microwave backhaul
Network routers and switches
Professional audio and video equipment
Storage and servers
Test and measurement
Block Diagram
5.0 x 3.2 mm
2
Package Pinout
SDA / NC
OE / VC / NC
SCL / NC
NC
GND
1
10
9
VDD
NC
NC
CLK
2
3
8
7
4
5
6
A0 / NC
Figure 1. SiT5157 Block Diagram
Figure 2. Pin Assignments (Top view)
(Refer to
Table 11
for Pin Descriptions)
Rev 1.02
August 2, 2018
www.sitime.com
SiT5157
60 MHz to 220 MHz, ±0.5 to ±2.5 ppm, Elite Platform™ Super-TCXO
Ordering Information
The following part number guide is for reference only. To customize and build an exact part number, use the
SiTime
Part Number Generator.
To validate the part number, use the SiTime
Part Number Decoder.
Package Size
"F": 5.0 x 3.2 mm
Output Waveform
"-" : LVCMOS
[1]
Silicon Revision Letter
Part Family
Pin 1 Function
–
TCXO mode only
"E": Output Enable
"N": No Connect
TCXO
VCTCXO
DCTCXO
Temperature Range
SiT5 1 5 7 A C
-
F K- 33E 0
-
98.123456T
SiT5 1 5 7 A C
-
F K- 33 V T
-
98.123456T
SiT5 1 5 7 A C
-
F KG 33J R
-
98.123456T
Packaging
"T": 12mm Tape & Reel, 3ku reel
"Y": 12mm Tape & Reel, 1ku reel
(blank): bulk
[2]
"I": Industrial, -40 to 85
°C
"C": Extended Commercial, -20 to 70
°C
"E": Extended Industrial, -40 to 105
°C
Frequency Stability
"K": for
±0.5
ppm
"A": for
±1.0
ppm
"D": for
±2.5
ppm
Frequency
60.000001 to 189.000000 MHz
200.000000 to 220.000000 MHz
I
2
C Address Mode
–
DCTCXO mode only
Values: 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, A, B, C, D, E, F
Set bits 3:0 of device
I
2
C address to the Hex value
of the ordering code. When the
I
2
C address is
factory programmed using these codes, pin
A0 is NC.
Value: G
The
I
2
C address is controlled by A0 pin.
Pull Range
–
DCTCXO mode only
"T":
±6.25
ppm
"R":
±10
ppm
"Q":
±12.5
ppm
"M":
±25
ppm
"B":
±50
ppm
"C":
±80
ppm
"E":
±100
ppm
"F":
±125
ppm
"G":
"H":
"X":
"L":
"Y":
"S":
"Z":
"U":
±150 ppm
±200 ppm
±400 ppm
±600 ppm
±800 ppm
±1200 ppm
±1600 ppm
±3200 ppm
Pin 1 Function
–
DCTCXO mode only
Supply Voltage
"25": 2.5 V
±
10%
"28": 2.8 V
±
10%
"30": 3.0 V
±
10%
"33": 3.3 V
±
10%
"I": Output Enable
"J": No Connect, software OE control
Notes:
1. “-“ corresponds to the default rise/fall time for LVCMOS output as specified in
Table 1
(Electrical Characteristics). Contact
SiTime
for other rise/fall time
options for best EMI.
2. Bulk is available for sampling only.
Rev 1.02
Page 2 of 32
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SiT5157
60 MHz to 220 MHz, ±0.5 to ±2.5 ppm, Elite Platform™ Super-TCXO
TABLE OF CONTENTS
Description ................................................................................................................................................................................... 1
Features....................................................................................................................................................................................... 1
Applications ................................................................................................................................................................................. 1
Block Diagram ............................................................................................................................................................................. 1
5.0 x 3.2 mm Package Pinout ..................................................................................................................................................... 1
Ordering Information .................................................................................................................................................................... 2
Electrical Characteristics.............................................................................................................................................................. 4
Device Configurations and Pin-outs ............................................................................................................................................. 8
Pin-out Top Views................................................................................................................................................................. 8
Test Circuit Diagrams for LVCMOS Outputs ................................................................................................................................ 9
Waveforms................................................................................................................................................................................. 10
Timing Diagrams ........................................................................................................................................................................ 10
Typical Performance Plots ......................................................................................................................................................... 11
Architecture Overview ................................................................................................................................................................ 12
Frequency Stability ............................................................................................................................................................. 12
Output Frequency and Format ............................................................................................................................................ 12
Output Frequency Tuning ................................................................................................................................................... 12
Pin 1 Configuration (OE, VC, or NC) .................................................................................................................................. 13
Device Configurations ................................................................................................................................................................ 13
TCXO Configuration ........................................................................................................................................................... 13
VCTCXO Configuration ...................................................................................................................................................... 14
DCTCXO Configuration ...................................................................................................................................................... 15
VCXO-Specific Design Considerations ...................................................................................................................................... 16
Linearity .............................................................................................................................................................................. 16
Control Voltage Bandwidth ................................................................................................................................................. 16
FV Characteristic Slope K
V
................................................................................................................................................. 16
Pull Range, Absolute Pull Range ........................................................................................................................................ 17
DCTCXO-Specific Design Considerations ................................................................................................................................. 18
Pull Range and Absolute Pull Range .................................................................................................................................. 18
Output Frequency ............................................................................................................................................................... 19
I C Control Registers .......................................................................................................................................................... 21
Register Descriptions.......................................................................................................................................................... 21
Register Address: 0x00. Digital Frequency Control Least Significant Word (LSW) ............................................................ 21
Register Address: 0x01. OE Control, Digital Frequency Control Most Significant Word (MSW)......................................... 22
Register Address: 0x02. DIGITAL PULL RANGE CONTROL
[14]
2
2
........................................................................................ 23
Serial Interface Configuration Description .......................................................................................................................... 24
Serial Signal Format ........................................................................................................................................................... 24
Parallel Signal Format ........................................................................................................................................................ 25
Parallel Data Format ........................................................................................................................................................... 25
I C Timing Specification ...................................................................................................................................................... 27
I C Device Address Modes ................................................................................................................................................. 28
Schematic Example ............................................................................................................................................................ 29
Dimensions and Patterns ........................................................................................................................................................... 30
Layout Guidelines ...................................................................................................................................................................... 31
Manufacturing Guidelines .......................................................................................................................................................... 31
2
2
Rev 1.02
Page 3 of 32
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SiT5157
60 MHz to 220 MHz, ±0.5 to ±2.5 ppm, Elite Platform™ Super-TCXO
Electrical Characteristics
All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise
stated. Typical values are at 25°C and 3.3V Vdd.
Table 1. Output Characteristics
Parameters
Nominal Output Frequency Range
Symbol
F_nom
Min.
60.000001
200
Operating Temperature Range
T_use
-20
-40
-40
Initial Tolerance
Supply Voltage Sensitivity
F_init
F_Vdd
-1
-16.25
-32.50
-65.0
Output Load Sensitivity
F_load
-2.75
-5.50
-11.00
Frequency Stability over
Temperature
F_stab
-0.5
-1.0
-2.5
Frequency vs. Temperature Slope
ΔF/ΔT
-25
-50
-100
Dynamic Frequency Change during
Temperature Ramp
F_dynamic
-0.21
-0.42
-0.83
One-Year Aging
20-Year Aging
F_1y
F_20y
–
–
Typ.
–
–
–
–
–
–
±7.10
±11.83
±28.40
±0.81
±1.35
±3.24
–
–
–
±15
±25
±60
±0.13
±0.21
±0.50
±1
±2
Max.
189
220
+70
+85
+105
+1
+16.25
+32.50
+65.0
+2.75
+5.50
+11.00
+0.5
+1.0
+2.5
+25
+50
+100
+0.21
+0.42
+0.83
–
–
Unit
MHz
MHz
°C
°C
°C
ppm
ppb
ppb
ppb
ppb
ppb
ppb
ppm
ppm
ppm
ppb/°C
ppb/°C
ppb/°C
ppb/s
ppb/s
ppb/s
ppm
ppm
±0.5 ppm F_stab, -40 to 105 °C
±1.0 ppm F_stab, -40 to 105 °C
±2.5 ppm F_stab, -40 to 105 °C
±0.5 ppm F_stab, 0.5°C/min temperature ramp rate
±1.0 ppm F_stab, 0.5°C/min temperature ramp rate
±2.5 ppm F_stab, 0.5°C/min temperature ramp rate
At 25°C, after 2-days of continued operation. Aging is
measured with respect to day 3.
At 25°C, after 2-days of continued operation. Aging is
measured with respect to day 3.
60 to 150 MHz
150 to 189 MHz, 200 to 220 MHz
10% - 90% Vdd
IOH = +3mA
IOL = -3mA
Time to first pulse, measured from the time Vdd reaches
90% of its final value. Vdd ramp time = 100 µs from 0V to
Vdd
See
Timing Diagrams
section below.
Time to first accurate pulse within rated stability, measured
from the time Vdd reaches 90% of its final value. Vdd
ramp time = 100 µs
Extended Commercial, ambient temperature
Industrial, ambient temperature
Extended Industrial, ambient temperature
Initial frequency at 25°C inclusive of solder-down shift
at 48 hours after 2 reflows
±0.5 ppm F_stab, Vdd ±5%
±1.0ppm F_stab, Vdd ±5%
±2.5 ppm F_stab, Vdd ±5%
±0.5 ppm F_stab. LVCMOS output, 15 pF ±10%. Clipped
sinewave output, 10kΩ || 10 pF ±10%
±1.0 ppm F_stab. LVCMOS output, 15 pF ±10%. Clipped
sinewave output, 10kΩ || 10 pF ±10%
±2.5 ppm F_stab. LVCMOS output, 15 pF ±10%. Clipped
sinewave output, 10kΩ || 10 pF ±10%
Referenced to (max frequency + min frequency)/2 over the
rated temperature range. Vc=Vdd/2 for VCTCXO
Condition
Frequency Coverage
Temperature Range
Frequency Stability
LVCMOS Output Characteristics
Duty Cycle
Rise/Fall Time
Output Voltage High
Output Voltage Low
Start-up Time
DC
Tr, Tf
VOH
VOL
T_start
45
42
0.8
90%
–
–
–
–
1.2
–
–
2.5
55
55
1.9
–
10%
3.5
%
%
ns
Vdd
Vdd
ms
Start-up Characteristics
Output Enable Time
First Pulse Accuracy
T_oe
T_stability
–
–
–
5
285
45
ns
ms
Rev 1.02
Page 4 of 32
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SiT5157
60 MHz to 220 MHz, ±0.5 to ±2.5 ppm, Elite Platform™ Super-TCXO
Table 2. DC Characteristics
Parameters
Supply Voltage
Symbol
Vdd
Min.
2.25
2.52
2.7
2.97
Current Consumption
OE Disable Current
Idd
I_od
–
–
–
–
Typ.
2.5
2.8
3.0
3.3
48
52
45
49
Max.
2.75
3.08
3.3
3.63
62
66
52
56
Unit
V
V
V
V
mA
mA
mA
mA
F_nom = 100 MHz, No Load, TCXO and DCTCXO modes
F_nom = 100 MHz, No Load, VCTCXO mode
OE = GND, output weakly pulled down. TCXO, DCTCXO
OE = GND, output weakly pulled down. VCTCXO mode
Condition
Contact
SiTime
for 2.25V to 3.63V continuous supply
voltage support.
Supply Voltage
Current Consumption
Table 3. Input Characteristics
Parameters
Input Impedance
Input High Voltage
Input Low Voltage
Symbol
Z_in
VIH
VIL
Min.
75
70%
–
±6.25
±6.25
±10
±12.5
±25
±50
±80
±100
±125
±150
±200
±400
±600
±800
±1200
±1600
±3200
±2.75
±2.25
±0.75
Upper Control Voltage
Lower Control Voltage
Control Voltage Input Impedance
Control Voltage Input Bandwidth
Frequency Control Polarity
Pull Range Linearity
Bus Frequency
VC_U
VC_L
VC_z
VC_bw
F_pol
PR_lin
2
Typ.
–
–
–
–
Max.
–
–
30%
–
Unit
kΩ
Vdd
Vdd
ppm
Internal pull up to Vdd
Condition
Input Characteristics
–
OE Pin
Frequency Tuning Range – Voltage Control or I
2
C mode
VCTCXO mode; contact
SiTime
for ±12.5 and ±25 ppm.
Pull Range
PR
–
–
ppm
DCTCXO mode.
Absolute Pull Range
[3]
APR
–
–
–
–
–
–
10
Positive
–
–
–
–
10%
–
–
ppm
ppm
ppm
Vdd
Vdd
MΩ
kHz
±0.5 ppm F_stab, DCTCXO, VCTCXO for PR = ±6.25 ppm
±1.0 ppm F_stab, DCTCXO, VCTCXO for PR = ±6.25 ppm
±2.5 ppm F_stab, DCTCXO, VCTCXO for PR = ±6.25 ppm
VCTCXO mode
VCTCXO mode
VCTCXO mode
VCTCXO mode; contact
SiTime
for other bandwidth
options.
VCTCXO mode
VCTCXO mode
-40 to 105
°C
-40 to 105
°C
-40 to 85
°C
DCTCXO mode
DCTCXO mode
DCTCXO mode
0.1 V
DD
< VOUT < 0.9 V
DD.
Includes typical leakage current
from 200 kΩ pull resister to VDD; DCTCXO mode
DCTCXO mode
90%
–
8
–
–
–
–
–
–
70%
–
0.5
–
0.5
100
400
1000
–
–
–
–
–
1.0
–
–
–
30%
–
0.4
24
5
%
kHz
kHz
kHz
Vdd
Vdd
V
µA
pF
I C Interface Characteristics, 200 Ohm, 550 pF (Max I
2
C Bus Load)
F_I2C
Input Voltage Low
Input Voltage High
Output Voltage Low
Input Leakage current
Input Capacitance
VIL_I2C
VIH_I2C
VOL_I2C
I
L
C
IN
Note:
3. APR = PR – initial tolerance – 20-year aging – frequency stability over temperature. Refer to
Table 14
for APR with respect to other pull range options.
Rev 1.02
Page 5 of 32
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