74V1G03
SINGLE 2-INPUT OPEN DRAIN NAND GATE
s
s
s
s
s
s
HIGH SPEED: t
PD
= 3.9ns (TYP.) at V
CC
= 5V
LOW POWER DISSIPATION:
I
CC
= 1µA(MAX.) at T
A
=25°C
HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 28% V
CC
(MIN.)
POWER DOWN PROTECTION ON INPUTS
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 5.5V
IMPROVED LATCH-UP IMMUNITY
SOT23-5L
SOT323-5L
ORDER CODES
PACKAGE
SOT23-5L
SOT323-5L
T&R
74V1G03STR
74V1G03CTR
DESCRIPTION
The 74V1G03 is an advanced high-speed CMOS
SINGLE 2-INPUT OPEN DRAIN NAND GATE
fabricated with sub-micron silicon gate and
double-layer metal wiring C
2
MOS technology.
The internal circuit is composed of 3 stages
including buffer output, which provide high noise
immunity and stable output.
The device can, with an external pull-up resistor,
be used in wired AND configuration. This device
can also be used as a led driver in any other
application requiring current sink.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.
PIN CONNECTION AND IEC LOGIC SYMBOLS
April 2004
1/9
74V1G03
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN N°
1
2
4
3
5
SYMBOL
1A
1B
1Y
GND
V
CC
NAME AND FUNCTION
Data Input
Data Input
Data Output
Ground (0V)
Positive Supply Voltage
TRUTH TABLE
A
L
L
H
H
Z: High Impedance
B
L
H
L
H
Y
Z
Z
Z
L
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
I
V
O
I
IK
I
OK
I
O
Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Current
Parameter
Value
-0.5 to +7.0
-0.5 to +7.0
-0.5 to V
CC
+ 0.5
- 20
±
20
±
25
±
50
-65 to +150
260
Unit
V
V
V
mA
mA
mA
mA
°C
°C
I
CC
or I
GND
DC V
CC
or Ground Current
T
stg
Storage Temperature
T
L
Lead Temperature (10 sec)
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
I
V
O
T
op
dt/dv
Supply Voltage
Input Voltage
Output Voltage
Operating Temperature
Input Rise and Fall Time (note 1) (V
CC
= 3.3
±
0.3V)
(V
CC
= 5.0
±
0.5V)
Parameter
Value
2 to 5.5
0 to 5.5
0 to V
CC
-55 to 125
0 to 100
0 to 20
Unit
V
V
V
°C
ns/V
ns/V
1) V
IN
from 30% to 70% of V
CC
2/9
74V1G03
DC SPECIFICATIONS
Test Condition
Symbol
Parameter
V
CC
(V)
2.0
3.0 to
5.5
2.0
3.0 to
5.5
2.0
3.0
4.5
3.0
4.5
I
OZ
High Impedance
Output Leakage
Current
Input Leakage
Current
Quiescent Supply
Current
5.5
0 to
5.5
5.5
I
O
=50
µA
I
O
=50
µA
I
O
=50
µA
I
O
=4 mA
I
O
=8 mA
V
I
= V
IH
or V
IL
V
O
= V
CC
or GND
V
I
= 5.5V or GND
V
I
= V
CC
or GND
T
A
= 25°C
Min.
1.5
0.7V
CC
0.5
0.3V
CC
0.0
0.0
0.0
0.1
0.1
0.1
0.36
0.36
±
0.25
±
0.1
1
Typ.
Max.
Value
-40 to 85°C
Min.
1.5
0.7V
CC
0.5
0.3V
CC
0.1
0.1
0.1
0.44
0.44
±
2.5
±
1
10
Max.
-55 to 125°C
Min.
1.5
0.7V
CC
0.5
0.3V
CC
0.1
0.1
0.1
0.55
0.55
±
5
±
1
20
µA
µA
µA
V
V
V
Max.
Unit
V
IH
High Level Input
Voltage
Low Level Input
Voltage
Low Level Output
Voltage
V
IL
V
OL
I
I
I
CC
AC ELECTRICAL CHARACTERISTICS
Test Condition
Symbol
Parameter
V
CC
(V)
3.3
(*)
3.3
(*)
5.0
(**)
5.0
(**)
t
PLZ
Propagation Delay
Time
3.3
(*)
5.0
(**)
C
L
(pF)
15
50
15
50
50
50
T
A
= 25°C
Min.
Typ.
4.8
5.3
3.9
4.3
6.8
4.8
Max.
6.5
7.5
5.5
6.0
9.5
6.5
Value
-40 to 85°C
Min.
1.0
1.0
1.0
1.0
1.0
1.0
Max.
8.0
9.0
6.5
7.5
10.0
7.0
-55 to 125°C
Min.
1.0
1.0
1.0
1.0
1.0
1.0
Max.
9.0
10.0
7.5
8.5
11.0
8.0
ns
ns
Unit
t
PZL
Propagation Delay
Time
(*) Voltage range is 3.3V
±
0.3V
(**) Voltage range is 5.0V
±
0.5V
3/9
74V1G03
CAPACITIVE CHARACTERISTICS
Test Condition
Symbol
Parameter
T
A
= 25°C
Min.
C
IN
C
OUT
C
PD
Input Capacitance
Output
Capacitance
Power Dissipation
Capacitance
(note 1)
Typ.
4
5
3
Max.
10
10
Value
-40 to 85°C
Min.
Max.
10
10
-55 to 125°C
Min.
Max.
10
10
pF
pF
pF
Unit
1) C
PD
is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
TEST CIRCUIT
C
L
= 15/50pF or equivalent (includes jig and probe capacitance)
R
1
= 1KΩ or equivalent
R
T
= Z
OUT
of pulse generator (typically 50Ω)
WAVEFORM: PROPAGATION DELAY
(f=1MHz; 50% duty cycle)
4/9
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