74LVX03
LOW VOLTAGE CMOS QUAD 2-INPUT NAND GATE
(OPEN DRAIN) WITH 5V TOLERANT INPUTS
s
s
s
s
s
s
s
s
s
HIGH SPEED:
t
PD
= 4.8ns (TYP.) at V
CC
= 3.3V
5V TOLERANT INPUTS
INPUT VOLTAGE LEVEL:
V
IL
=0.8V, V
IH
=2V at V
CC
=3V
LOW POWER DISSIPATION:
I
CC
= 2
µA
(MAX.) at T
A
=25°C
LOW NOISE:
V
OLP
= 0.3V (TYP.) at V
CC
= 3.3V
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 3.6V (1.2V Data Retention)
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 03
IMPROVED LATCH-UP IMMUNITY
POWER DOWN PROTECTION ON INPUTS
SOP
TSSOP
Table 1: Order Codes
PACKAGE
SOP
TSSOP
T&R
74LVX03MTR
74LVX03TTR
DESCRIPTION
The 74LVX03 is a low voltage CMOS OPEN
DRAIN HEX INVERTER fabricated with
sub-micron silicon gate and double-layer metal
wiring C
2
MOS technology. It is ideal for low
power, battery operated and low noise 3.3V
applications.
The internal circuit is composed of 3 stages
including buffer output, which provides high noise
immunity and stable output.
This device can, with an external pull-up resistor,
be used in wired AND configuration. This device
Figure 1: Pin Connection And IEC Logic Symbols
can also be used as a led driver and in any other
application requiring a current sink.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage.
This device can be used to interface 5V to 3V
system. It combines high speed performance with
the true CMOS low power consumption.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
August 2004
Rev. 2
1/11
74LVX03
Figure 2: Input Equivalent Circuit
Table 2: Pin Description
PIN N°
1, 4, 9, 12
2, 5, 10, 13
3, 6, 8, 11
7
14
SYMBOL
1A to 4A
1B to 4B
1Y to 4Y
GND
V
CC
NAME AND FUNCTION
Data Inputs
Data Inputs
Data Outputs
Ground (0V)
Positive Supply Voltage
Table 3: Truth Table
A
L
L
H
H
Z: High Impedance
B
L
H
L
H
Y
Z
Z
Z
L
Table 4: Absolute Maximum Ratings
Symbol
V
CC
V
I
V
O
I
IK
I
OK
I
O
Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Current
Parameter
Value
-0.5 to +7.0
-0.5 to +7.0
-0.5 to V
CC
+ 0.5
- 20
±
20
±
25
±
50
-65 to +150
300
Unit
V
V
V
mA
mA
mA
mA
°C
°C
I
CC
or I
GND
DC V
CC
or Ground Current
Storage Temperature
T
stg
T
L
Lead Temperature (10 sec)
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
Table 5: Recommended Operating Conditions
Symbol
V
CC
V
I
V
O
T
op
dt/dv
Supply Voltage (note 1)
Input Voltage
Output Voltage
Operating Temperature
Input Rise and Fall Time (note 2) (V
CC
= 3.3V)
Parameter
Value
2 to 3.6
0 to 5.5
0 to V
CC
-55 to 125
0 to 100
Unit
V
V
V
°C
ns/V
1) Truth Table guaranteed: 1.2V to 3.6V
2) V
IN
from 0.8V to 2.0V
2/11
74LVX03
Table 6: DC Specifications
Test Condition
Symbol
Parameter
V
CC
(V)
2.0
3.0
3.6
2.0
3.0
3.6
2.0
3.0
3.0
I
I
I
OZ
Input Leakage
Current
High Impedance
Output Leakage
Current
Quiescent Supply
Current
3.6
3.6
3.6
I
O
=50
µA
I
O
=50
µA
I
O
=4 mA
V
I
= 5V or GND
V
I
= V
IH
or V
IL
V
O
= V
CC
or GND
V
I
= V
CC
or GND
T
A
= 25°C
Min.
1.5
2.0
2.4
0.5
0.8
0.8
0.0
0.0
0.1
0.1
0.36
±
0.1
±0.25
2
Typ.
Max.
Value
-40 to 85°C
Min.
1.5
2.0
2.4
0.5
0.8
0.8
0.1
0.1
0.44
±
1
±
2.5
20
Max.
-55 to 125°C
Min.
1.5
2.0
2.4
0.5
0.8
0.8
0.1
0.1
0.55
±
1
±
5.0
20
µA
µA
µA
V
Max.
V
Unit
V
IH
High Level Input
Voltage
Low Level Input
Voltage
Low Level Output
Voltage
V
IL
V
V
OL
I
CC
Table 7: Dynamic Switching Characteristics
Test Condition
Symbol
Parameter
V
CC
(V)
3.3
3.3
C
L
= 50 pF
3.3
0.8
T
A
= 25°C
Min.
Typ.
0.3
-0.5
2
V
-0.3
Max.
0.5
Value
-40 to 85°C
Min.
Max.
-55 to 125°C
Min.
Max.
Unit
V
OLP
V
OLV
V
IHD
V
ILD
Dynamic Low
Voltage Quiet
Output (note 1, 2)
Dynamic High
Voltage Input (note
1, 3)
Dynamic Low
Voltage Input (note
1, 3)
1) Worst case package.
2) Max number of outputs defined as (n). Data inputs are driven 0V to 3.3V, (n-1) outputs switching and one output at GND.
3) Max number of data inputs (n) switching. (n-1) switching 0V to 3.3V. Inputs under test switching: 3.3V to threshold (V
ILD
), 0V to threshold
(V
IHD
), f=1MHz.
3/11
74LVX03
Table 8: AC Electrical Characteristics
(Input t
r
= t
f
= 3ns)
Test Condition
Symbol
Parameter
V
CC
(V)
2.7
2.7
3.3
(*)
t
PLZ
t
OSLH
t
OSHL
Propagation Delay
Time
Output To Output
Skew Time (note1,
2)
3.3
(*)
2.7
3.3
(*)
2.7
3.3
(*)
C
L
(pF)
15
50
15
50
50
50
50
50
T
A
= 25°C
Min.
Typ.
5.4
6.0
4.8
5.3
10.5
9.6
0.5
0.5
Max.
7.7
8.7
7.0
7.6
14.7
13.5
1.0
1.0
1.0
1.0
Value
-40 to 85°C
Min.
Max.
9.0
10.0
8.1
8.8
15.0
14.0
1.5
1.5
1.0
1.0
-55 to 125°C
Min.
Max.
9.5
11.0
8.5
9.5
17.0
15.0
1.5
1.5
ns
ns
Unit
t
PZL
Propagation Delay
Time
ns
1) Skew is defined as the absolute value of the difference between the actual propagation delay for any two outputs of the same device switch-
ing in the same direction, either HIGH or LOW
2) Parameter guaranteed by design
(*) Voltage range is 3.3V
±
0.3V
Table 9: Capacitive Characteristics
Test Condition
Symbol
Parameter
V
CC
(V)
3.3
3.3
3.3
T
A
= 25°C
Min.
Typ.
5.4
7.3
2.6
Max.
10
Value
-40 to 85°C
Min.
Max.
10
-55 to 125°C
Min.
Max.
10
pF
pF
pF
Unit
C
IN
C
OUT
C
PD
Input Capacitance
Output
Capacitance
Power Dissipation
Capacitance
(note 1)
1) C
PD
is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
/6 (per gate)
Figure 3: Test Circuit
C
L
= 15/50pF or equivalent (includes jig and probe capacitance)
R
L
= R1 = 1KΩ or equivalent
R
T
= Z
OUT
of pulse generator (typically 50Ω)
4/11
微控制器 MCU
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