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LC51ATR

产品描述Trans Voltage Suppressor Diode, 1500W, 51V V(RWM), Unidirectional, 1 Element, Silicon, DO-202AA, HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN
产品类别分立半导体    二极管   
文件大小190KB,共4页
制造商Microsemi
官网地址https://www.microsemi.com
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LC51ATR概述

Trans Voltage Suppressor Diode, 1500W, 51V V(RWM), Unidirectional, 1 Element, Silicon, DO-202AA, HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN

LC51ATR规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
零件包装代码DO-13
包装说明O-MALF-W2
针数2
Reach Compliance Codecompliant
ECCN代码EAR99
最大击穿电压62.7 V
最小击穿电压56.7 V
外壳连接CATHODE
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-202AA
JESD-30 代码O-MALF-W2
JESD-609代码e0
最大非重复峰值反向功率耗散1500 W
元件数量1
端子数量2
最高工作温度175 °C
最低工作温度-65 °C
封装主体材料METAL
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
极性UNIDIRECTIONAL
最大功率耗散1 W
最大重复峰值反向电压51 V
表面贴装NO
技术AVALANCHE
端子面层TIN LEAD
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

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LC6.5 thru LC170A, e3
1500 WATT LOW CAPACITANCE
TRANSIENT VOLTAGE SUPPRESSOR
SCOTTSDALE DIVISION
DESCRIPTION
This hermetically sealed Transient Voltage Suppressor (TVS) product family
includes a rectifier diode element in series and opposite direction to achieve low
capacitance performance below 100 pF (see Figure 2). The low level of TVS
capacitance may be used for protecting higher frequency applications in inductive
switching environments or electrical systems involving secondary lightning effects
per IEC61000-4-5 as well as RTCA/DO-160D or ARINC 429 for airborne
avionics. With virtually instantaneous response, they also protect from ESD and
EFT per IEC61000-4-2 and IEC61000-4-4. If bipolar transient capability is
required, two of these low capacitance TVS devices may be used in parallel in
opposite directions (anti
-
parallel) for complete ac protection as shown in Figure 4.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
DO-13
(DO-202AA)
FEATURES
Unidirectional low-capacitance TVS series for flexible
thru-hole mounting (for bidirectional see Figure 4)
Suppresses transients up to 1500 watts @ 10/1000 µs
(see Figure 1)*
Clamps transient in less than 100 pico seconds
Working voltage (V
WM
) range 6.5 V to 170 V
Hermetic sealed DO-13 metal package
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, JANTXV, and JANS are also
available by adding MQ, MX, MV, MSP prefixes
respectively to part numbers, e.g. MXLC6.5A, etc.
Surface mount equivalent packages also available as
SMCJLCE6.5 - SMCJLCE170A or SMCGLCE6.5 -
SMCGLCE170A in separate data sheet (consult factory
for other surface mount options)
Plastic axial-leaded equivalents available in the LCE6.5
- LCE170A series in separate data sheet
RoHS Compliant devices available by adding “e3” suffix
APPLICATIONS / BENEFITS
Protection from switching transients and induced RF
Low capacitance for data line protection up to 1 MHz
Protection for aircraft fast data rate lines up to Level 5
Waveform 4 and Level 2 Waveform 5A in RTCA/DO-
160D (also see MicroNote 130) & ARINC 429 with bit
rates of 100 kb/s (per ARINC 429, Part 1, par 2.4.1.1)
ESD & EFT protection per IEC 61000-4-2 and -4-4
Secondary lightning protection per IEC61000-4-5 with
42 Ohms source impedance:
Class 1:
Class 2:
Class 3:
Class 4:
LC6.5 to LC170A
LC6.5 to LC150A
LC6.5 to LC70A
LC6.5 to LC36A
Secondary lightning protection per IEC61000-4-5 with
12 Ohms source impedance:
Class 1 :
Class 2:
Class 3:
Class 4:
LC6.5
LC6.5
LC6.5
LC6.5
to LC90A
to LC45 A
to LC22A
to LC11A
Secondary lightning protection per IEC61000-4-5 with
2 Ohms source impedance:
Class 2: LC6.5 to LC20A
Class 3: LC6.5 to LC10A
Inherently radiation hard per Microsemi MicroNote 050
MAXIMUM RATINGS
1500 Watts at 10/1000
μs
with repetition rate of 0.01% or
o
less*
at lead temperature (T
L
) 25 C (see Figs. 1, 2, & 4)
o
o
Operating & Storage Temperatures: -65 to +175 C
THERMAL RESISTANCE: 50
o
C/W (Typical) junction to
lead at 0.375 inches (10 mm) from body or 110
o
C/W
junction to ambient when mounted on FR4 PC board with
4 mm
2
copper pads (1 oz) and track width 1 mm, length
25 mm
DC Power Dissipation
*
: 1 Watt at T
L
< +125
o
C 3/8” (10
mm) from body (see derating in Fig 3 and note below)
Solder Temperatures: 260
o
C for 10 s (maximum)
MECHANICAL AND PACKAGING
CASE: DO-13 (DO-202AA), welded, hermetically
sealed metal and glass
FINISH: All external metal surfaces are Tin-Lead
plated and solderable per MIL-STD-750 method 2026
POLARITY: Cathode connected to case as shown by
diode symbol (cathode positive for normal operation)
MARKING: Part number and polarity diode symbol
WEIGHT: 1.4 grams. (Approx)
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
See package dimension on last page
LC6.5 thru LC170A
*
TVS devices are not typically used for dc power dissipation and are instead operated < V
WM
(rated standoff voltage) except for transients that briefly
drive the device into avalanche breakdown (V
BR
to V
C
region) of the TVS element. Also see Figures 3 and 4 for further protection details in rated peak
pulse power for unidirectional and bidirectional configurations respectively.
Copyright
©
2008
10-29-2008 REV E
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
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