Numonyx™ Wireless Flash Memory (W30)
28F640W30, 28F320W30, 28F128W30
Datasheet
Product Features
High Performance Read-While-Write/Erase
— Burst Frequency at 40 MHz
— 70 ns Initial Access Speed
— 25 ns Page-Mode Read Speed
— 20 ns Burst-Mode Read Speed
— Burst-Mode and Page-Mode in All Blocks
and across All Partition Boundaries
— Burst Suspend Feature
— Enhanced Factory Programming:
3.5 µs per Word Program Time
— Programmable WAIT Signal Polarity
Flash Power
— V
CC
= 1.70 V – 1.90 V
— V
CCQ
= 2.20 V – 3.30 V
— Standby Current (130 nm) = 8 µA (typ.)
— Read Current = 7 mA
(4 word burst, typical)
Flash Software
— 5 µs/9 µs (typ.) Program/Erase Suspend
Latency Time
— Numonyx™ Flash Data Integrator (FDI) and
Common Flash Interface (CFI) Compatible
Quality and Reliability
— Operating Temperature:
–40 °C to +85 °C
— 100K Minimum Erase Cycles
— 130 nm ETOX™ VIII Process
— 180 nm ETOX™ VII Process
Flash Architecture
— Multiple 4-Mbit Partitions
— Dual Operation: RWW or RWE
— Parameter Block Size = 4-Kword
— Main block size = 32-Kword
— Top or Bottom Parameter Blocks
Flash Security
— 128-bit Protection Register: 64 Unique
Device Identifier Bits; 64 User OTP
Protection Register Bits
— Absolute Write Protection with V
PP
at
Ground
— Program and Erase Lockout during Power
Transitions
— Individual and Instantaneous Block
Locking/Unlocking with Lock-Down
Density and Packaging
— 130 nm: 32Mb, 64Mb, and 128Mb in VF
BGA Package; 64Mb, 128Mb in QUAD+
Package
— 180 nm: 32Mb and 128Mb Densities in VF
BGA Package; 64Mb Density in µBGA*
Package
— 56 Active Ball Matrix, 0.75 mm Ball-Pitch
— 16-bit Data Bus
Order Number: 290702-13
November 2007
INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH NUMONYX™ PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR
OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN NUMONYX'S TERMS AND
CONDITIONS OF SALE FOR SUCH PRODUCTS, NUMONYX ASSUMES NO LIABILITY WHATSOEVER, AND NUMONYX DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY, RELATING TO SALE AND/OR USE OF NUMONYX PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A
PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. Numonyx
products are not intended for use in medical, life saving, life sustaining, critical control or safety systems, or in nuclear facility applications.
Legal L ines and D isc laim er s
Numonyx B.V. may make changes to specifications and product descriptions at any time, without notice.
Numonyx B.V. may have patents or pending patent applications, trademarks, copyrights, or other intellectual property rights that relate to the presented
subject matter. The furnishing of documents and other materials and information does not provide any license, express or implied, by estoppel or
otherwise, to any such patents, trademarks, copyrights, or other intellectual property rights.
Designers must not rely on the absence or characteristics of any features or instructions marked “reserved” or “undefined.” Numonyx reserves these for
future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them.
Contact your local Numonyx sales office or your distributor to obtain the latest specifications and before placing your product order.
Copies of documents which have an order number and are referenced in this document, or other Numonyx literature may be obtained by visiting
Numonyx's website at
http://www.numonyx.com.
Numonyx, the Numonyx logo, and StrataFlash are trademarks or registered trademarks of Numonyx B.V. or its subsidiaries in other countries.
*Other names and brands may be claimed as the property of others.
Copyright © 2007, Numonyx B.V., All Rights Reserved.
Datasheet
2
November 2007
Order Number: 290702-13
Numonyx™ Wireless Flash Memory (W30)
Contents
1.0
Introduction
.............................................................................................................. 7
1.1
Document Purpose .............................................................................................. 7
1.2
Nomenclature ..................................................................................................... 7
1.3
Conventions ....................................................................................................... 8
Functional Overview
.................................................................................................. 9
2.1
Overview ........................................................................................................... 9
2.2
Memory Map and Partitioning .............................................................................. 10
Package Information
............................................................................................... 13
3.1
W30 Flash Memory Device – 130 nm Lithography .................................................. 13
3.2
W30 Flash Memory Device – 180 nm Lithography .................................................. 15
Ballout and Signal Descriptions
............................................................................... 18
4.1
Signal Ballout ................................................................................................... 18
4.2
Signal Descriptions ............................................................................................ 20
Maximum Ratings and Operating Conditions............................................................
24
5.1
Absolute Maximum Ratings................................................................................. 24
5.2
Operating Conditions ......................................................................................... 24
Electrical Specifications
........................................................................................... 26
6.1
DC Current Characteristics.................................................................................. 26
6.2
DC Voltage Characteristics.................................................................................. 27
AC Characteristics
................................................................................................... 28
7.1
Read Operations - 130 nm Lithography ................................................................ 28
7.2
Read Operations - 180 nm Lithography ................................................................ 29
7.3
AC Write Characteristics ..................................................................................... 38
7.4
Erase and Program Times................................................................................... 43
Power and Reset Specifications
............................................................................... 44
8.1
Active Power..................................................................................................... 44
8.2
Automatic Power Savings (APS) .......................................................................... 44
8.3
Standby Power.................................................................................................. 44
8.4
Power-Up/Down Characteristics........................................................................... 44
8.4.1 System Reset and RST#.......................................................................... 45
8.4.2 VCC, VPP, and RST# Transitions............................................................... 45
8.5
Power Supply Decoupling ................................................................................... 45
8.6
Reset Specifications........................................................................................... 46
8.7
AC I/O Test Conditions....................................................................................... 46
8.8
Flash Device Capacitance ................................................................................... 47
Flash Device Operations
.......................................................................................... 48
9.1
Bus Operations ................................................................................................. 48
9.1.1 Read .................................................................................................... 48
9.1.2 Burst Suspend ....................................................................................... 49
9.1.3 Standby ................................................................................................ 49
9.1.4 Reset.................................................................................................... 50
9.1.5 Write .................................................................................................... 50
9.2
Flash Device Commands..................................................................................... 50
9.3
Command Sequencing ....................................................................................... 53
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0 Read Operations
...................................................................................................... 55
10.1 Read Array ....................................................................................................... 55
November 2007
Order Number: 290702-13
Datasheet
3
Numonyx™ Wireless Flash Memory (W30)
10.2
10.3
10.4
10.5
Read Device ID .................................................................................................55
Read Query (CFI) ..............................................................................................56
Read Status Register..........................................................................................56
Clear Status Register .........................................................................................58
11.0 Program Operations
.................................................................................................59
11.1 Word Program ...................................................................................................59
11.2 Factory Programming .........................................................................................60
11.3 Enhanced Factory Program (EFP) .........................................................................61
11.3.1 EFP Requirements and Considerations .......................................................61
11.3.2 Setup....................................................................................................62
11.3.3 Program ................................................................................................62
11.3.4 Verify....................................................................................................62
11.3.5 Exit.......................................................................................................63
12.0 Program and Erase Operations.................................................................................65
12.1 Program/Erase Suspend and Resume ...................................................................65
12.2 Block Erase .......................................................................................................67
12.3 Read-While-Write and Read-While-Erase ...............................................................69
13.0 Security Modes
........................................................................................................71
13.1 Block Lock Operations ........................................................................................71
13.1.1 Lock......................................................................................................72
13.1.2 Unlock...................................................................................................72
13.1.3 Lock-Down ............................................................................................72
13.1.4 Block Lock Status ...................................................................................73
13.1.5 Lock During Erase Suspend ......................................................................73
13.1.6 Status Register Error Checking .................................................................74
13.1.7 WP# Lock-Down Control ..........................................................................74
13.2 Protection Register.............................................................................................75
13.2.1 Reading the Protection Register ................................................................76
13.2.2 Programing the Protection Register ...........................................................76
13.2.3 Locking the Protection Register.................................................................76
13.3 VPP Protection...................................................................................................78
14.0 Set Read Configuration Register
..............................................................................79
14.1 Read Mode (RCR[15]) ........................................................................................80
14.2 First Access Latency Count (RCR[13:11]) ..............................................................80
14.2.1 Latency Count Settings............................................................................81
14.3 WAIT Signal Polarity (RCR[10]) ...........................................................................81
14.4 WAIT Signal Function .........................................................................................82
14.5 Data Hold (RCR[9])............................................................................................82
14.6 WAIT Delay (RCR[8]) .........................................................................................83
14.7 Burst Sequence (RCR[7])....................................................................................83
14.8 Clock Edge (RCR[6]) ..........................................................................................85
14.9 Burst Wrap (RCR[3]) ..........................................................................................85
14.10 Burst Length (RCR[2:0]).....................................................................................85
A
B
C
Write State Machine.................................................................................................86
Common Flash Interface
..........................................................................................89
Ordering Information
...............................................................................................99
Datasheet
4
November 2007
Order Number: 290702-13
Numonyx™ Wireless Flash Memory (W30)
Revision History
Date of
Revision
09/19/00
Version
-001
Initial release
28F3208W30 product references removed (product was discontinued)
28F640W30 product added
Revised Table 2,
Signal Descriptions (DQ
15–0
, ADV#, WAIT, S-UB#, S-LB#, V
CCQ
)
Revised Section 3.1,
Bus Operations
Revised Table 5,
Command Bus Definitions,
Notes 1 and 2
Revised Section 4.2.2,
First Latency Count (LC
2–0
);
revised Figure 6,
Data Output with LC
Setting at Code 3;
added Figure 7,
First Access Latency Configuration
Revised Section 4.2.3,
WAIT Signal Polarity (WT)
Added Section 4.2.4,
WAIT Signal Function
Revised Section 4.2.5,
Data Output Configuration (DOC)
Added Figure 8,
Data Output Configuration with WAIT Signal Delay
Revised Table 13,
Status Register DWS and PWS Description
Revised entire Section 5.0,
Program and Erase Voltages
Revised entire Section 5.3,
Enhanced Factory Programming (EFP)
Revised entire Section 8.0,
Flash Security Modes
Revised entire Section 9.0,
Flash Protection Register;
added Table 15,
Simultaneous
Operations Allowed with the Protection Register
Revised Section 10.1,
Power-Up/Down Characteristics
Revised Section 11.3,
DC Characteristics. Changed
I
CCS,
I
CCWS,
I
CCES
Specs from 18 µA to
21µA; changed I
CCR
Spec from 12 mA to 15 mA (burst length = 4)
Added Figure 20,
WAIT Signal in Synchronous Non-Read Array Operation Waveform
Added Figure 21,
WAIT Signal in Asynchronous Page-Mode Read Operation Waveform
Added Figure 22,
WAIT Signal in Asynchronous Single-Word Read Operation Waveform
Revised Figure 23,
Write Waveform
Revised Section 12.4,
Reset Operations
Clarified Section 13.2,
SRAM Write Operation,
Note 2
Revised Section 14.0,
Ordering Information
Minor text edits
Deleted SRAM Section
Added 128M DC and AC Specifications
Added Burst Suspend
Added Read While Write Transition Waveforms
Various text edits
Revised Device ID
Revised Write Speed Bin
Various text edits
Added Latency Count Tables
Updated Packing Ball-Out and Dimension
Various text edits
Minor text clarifications
Revised Table 20, DC Current Characteristics, I
CCS
Revised Table 20, DC Current Characteristics, I
CCAPS
Removed Numonyx Burst order
Minor text edits
Updated Package Drawing and Dimensions
Revised Table 22, Read Operations, t
APA
Added note to table 15, Configuration Register Descriptions
Added note to section 3.1.1, Read
Description
03/14/01
-002
04/05/02
-003
04/24/02
-004
10/20/02
-005
01/14/03
-006
03/22/03
-007
November 2007
Order Number: 290702-13
Datasheet
5
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