TS514 / TS514A
Precision Quad Operational Amplifier
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■
■
■
■
■
■
■
Low input offset voltage: 500µV max.
Low power consumption.
Short circuit protection.
Low distortion, low noise.
High gain-bandwidth product.
High channel separation.
ESD protection 2kV.
Macromodel included in this specification.
D
SO-14
(Plastic Micropackage)
N
DIP14
(Plastic Package)
Description
The TS514 is a high-performance quad
operational amplifier with frequency and phase
compensation built into the chip. The internal
phase compensation allows stable operation as a
voltage follower in spite of its high gain-bandwidth
product.
The circuit presents very stable electrical
characteristics over the entire supply voltage
range, and is particularly intended for professional
and telecom applications (active filter, etc.).
Pin Connections (top view)
Output 1
Inverting Input 1
Non-inverting Input 1
V
CC
+
Non-inverting Input 2
Inverting Input 2
Output 2
1
2
3
4
5
6
7
+
-
+
-
-
+
-
+
14 Output 4
13 Inverting Input 4
12 Non-inverting Input 4
11 V
CC
-
10 Non-inverting Input 3
9
8
Inverting Input 3
Output 3
Order Codes
Part Number
TS514IN
TS514AIN
TS514ID/IDT
TS514AID/AIDT
TS514IYD/IYDT
TS514AIYD/AIYDT
Temperature
Range
Package
DIP14
-40, + 125°C
SO-14
SO14 (automotive grade
level)
Packing
Tube
Tube
or
Tape & Reel
Marking
514IN
514AIN
514I
514AI
514IY
514AIY
September 2005
Rev. 3
1/10
www.st.com
10
Absolute Maximum Ratings
TS514 / TS514A
1
Absolute Maximum Ratings
Table 1.
Symbol
V
CC
V
i
V
id(1)
p
tot
T
stg
R
thja
Supply Voltage
Input Voltage
Positive
Negative
Differential Input Voltage
Power Dissipation at T
amb
= 70°C
(2)
Storage Temperature Range
Thermal Resistance Junction to Ambient
SO14
DIP14
HBM: Human Body Model
(3)
ESD
MM: Machine Model
(4)
CDM: Charged Device Model
1. Differential voltages are with respect to the midpoint between Vcc+ and Vcc-.
2. Power dissipation must be considered to ensure maximum junction temperature (Tj) is not exceeded.
3. Human body model, 100pF discharged through a 1.5kΩ resistor into pin of device.
4. Machine model ESD, a 200pF cap is charged to the specified voltage, then discharged directly into the IC with
no external series resistor (internal resistor < 5Ω), into pin to pin of device.
Key parameters and their absolute maximum ratings
Parameter
Value
±18
+V
CC
-Vcc - 0.5
±(V
CC
- 1)
400
-65 to +150
Unit
V
V
V
mW
°C
103
66
2
<200
1.5
°C/W
kV
V
kV
Table 2.
Symbol
V
CC+
Operating conditions
Parameter
Min
+3
Supply voltage
-3
Operating Free Air Temperature Range
-40
Max
+15
V
-15
+125
°C
Unit
V
CC
-
T
oper
2/10
TS514 / TS514A
Schematic Diagram
2
Schematic Diagram
Figure 1.
Typical application schematic for 1/4 of the TS514
3/10
Electrical Characteristics
TS514 / TS514A
3
Electrical Characteristics
Table 3.
Symbol
I
cc
I
ib
R
i
Supply Current
Input Bias Current
– at 25°C
– at T
min
≤
T
op
≤
T
max
Input Resistance, f = 1kHz
Input Offset Voltage
– at 25°C:
V
io
TS514
TS514A
– at T
min
≤
T
op
≤
T
max
TS514
TS514A
Input Offset Voltage Drift at T
min
≤
T
op
≤
T
max
Input Offset Current
I
io
at 25°C
at T
min
≤
T
op
≤
T
max
Input Offset Current Drift
T
min
≤
T
op
≤
T
max
Output Short Circuit Current
Large Signal Voltage Gain, R
L
= 2kΩ
A
vd
GBP
V
cc
= ±15V
V
cc
= ± 4V
Gain-bandwidth Product, f = 100kHz
Equivalent Input Noise Voltage, f = 1kHz
e
n
Rs = 50Ω
Rs = 1kΩ
Rs = 10kΩ
Total Harmonic Distortion
A
v
= 20dB, R
L
= 2kΩ V
o
= 2V
pp
, f = 1kHz
,
Output Voltage Swing, R
L
= 2kΩ
±V
opp
V
opp
SR
CMR
SVR
V
cc
= ±15V
V
cc
= ± 4V
Large Signal Voltage Swing, R
L
= 10kΩ, f = 10kHz
Slew Rate, unity gain, R
L
= 2kΩ
Common Mode Rejection Ratio, V
ic
= 10V
Supply Voltage Rejection Ratio, dV
ic
= 10V, f = 100Hz
0.8
90
90
120
±13
±3
28
1.5
V
pp
V/µs
dB
dB
dB
V
8
10
18
0.03
15
nV
-----------
Hz
90
1.8
100
95
3
dB
5
20
40
nA
0.5
2.5
0.5
4
1.5
5
µV/°C
mV
V
CC
= ±15V, T
amb
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
1.4
Max.
2.4
Unit
mA
50
150
300
nA
1
MΩ
∆V
io
∆I
io
I
os
0.08
23
nA
-------
°
C
mA
MHz
THD
0.1
%
V
o1
/V
o2
Channel Separation, f = 1kHz
4/10
TS514 / TS514A
Macromodels
4
4.1
Macromodels
Important note concerning this macromodel
Please consider following remarks before using this macromodel.
●
●
●
All models are a trade-off between accuracy and complexity (i.e. simulation time).
Macromodels are not a substitute to breadboarding; rather, they confirm the validity of a
design approach and help to select surrounding component values.
A macromodel emulates the NOMINAL performance of a TYPICAL device within
SPECIFIED OPERATING CONDITIONS (i.e. temperature, supply voltage, etc.). Thus the
macromodel is often not as exhaustive as the datasheet, its goal is to illustrate the main
parameters of the product.
Data issued from macromodels used outside of its specified conditions (Vcc,
Temperature, etc.) or even worse: outside of the device operating conditions (Vcc, Vicm,
etc.) are not reliable in any way.
●
In
Section 4.2,
the electrical characteristics resulting from the use of this macromodel are
presented.
4.2
Electrical characteristics from macromodelization
Table 4.
Electrical characteristics resulting from macromodel simulation at V
cc
= ±15V,
T
amb
= 25°C (unless otherwise specified)
Conditions
Value
0
R
L
= 2kΩ
No load, per operator
94
325
-13.5 to 13.5
R
L
= 2kΩ
R
L
= 2kΩ
V
o
= 0V
V
o
= 0V
R
L
= 2kΩ, C
L
= 100pF
R
L
= 2kΩ, C
L
= 100pF
R
L
= 2kΩ, C
L
= 100pF
+13
-13
24
24
3
1.4
55
Unit
mV
V/mV
µA
V
V
V
mA
mA
MHz
V/µs
Degrees
Symbol
V
io
A
vd
I
cc
V
icm
V
OH
V
OL
I
sink
I
source
GBP
SR
∅m
5/10
嵌入式系统
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