INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
MJW21191
DESCRIPTION
·DC
Current Gain
·High
Area of Safe Operation
APPLICATIONS
·Designed
for power audio output, or high power drivers in
audio amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
-150
-150
-5
UNIT
V
V
Collector Current-Continuous
Collector Current-Pulsed
Base Current-Continuous
P
D
T
j
T
stg
Total Power Dissipation (T
C
=25℃)
Junction Temperature
Storage Temperature
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w
w
V
-8
A
-16
-2
A
A
100
W
150
-65~150
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
ThermalResistance Junction To Case
VALUE
0.65
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE
(sat)-1
V
CE
(sat)-2
V
BE
(on)
I
CEs
I
EBO
h
FE-1
h
FE-2
f
T
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
CONDITIONS
I
C
=-10mA; I
B
=0
I
C
=-4A ;I
B
=-0.4A
B
MJW21191
MIN
-150
TYP.
MAX
UNIT
V
-1.0
-2.0
-2
-10
-10
100
V
V
V
μA
μA
I
C
=-8A ;I
B
=-1.6A
B
I
C
=-4A ; V
CE
=-2V
V
CE
= -250V; I
E
=0
V
EB
=-5V; I
C
=0
Current Gain-Bandwidth Product
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w
w
I
C
=-4A; V
CE
=-2V
I
C
=-8A; V
CE
=-2V
15
5
I
C
=-1A ;V
CE
=-10V; f
test
=1MHz
4
MHz
isc Website：www.iscsemi.cn
2
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