PRODUCT SPECIFICATIONS
SEMICONDUCTOR TECHNOLOGY, INC.
3131 S. E. JAY STREET, STUART, FL 34997
TYPE:
MJW16206
PH: (561)283-4500 FAX: (561)286-8914
Website:
http://www.semi -tech-inc.com
CASE OUTLINE: TO -247
NPN SILICON HIGH VOLTAGE HIGH POWER TRANSISTOR
ABSOLUTE MAXIMUM RATING:
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base
Collector to Emitter
Continuous Collector Current
Peak Collector Current
Power Dissipation TA = 25
°C
Power Dissipation TC = 25
°C
Storage Temperature
Operating Temperature
Lead Temperature From Case
ELECTRICAL CHARACTERISTICS TA @ 25
°
C
PARAMETERS
SYMBOL
TEST CONDITIONS
Collector to Base Voltage
BVCBO
Emitter to Base Voltage
Collector to Emitter Voltage
Collector to Emitter Voltage
Collector to Emitter Voltage
Collector Cutoff Current
Collector Cutoff Current
Collector Cutoff Current
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
D.C. Current Gain Pulsed*
D.C. Current Gain Pulsed*
D.C. Current Gain Pulsed*
D.C. Current Gain Pulsed*
D.C. Current Gain Pulsed*
Saturation Voltage*
Saturation Voltage*
Saturation Voltage*
Base Emitter Voltage*
Base Emitter Voltage*
Base Emitter Voltage*
Base Emitter Voltage*
BVEBO
BVCEO(sus)
BVCEO
BVCEV
ICBO
ICBO
ICES
ICES
ICEV
I EBO
h FE
h FE
hFE
h FE
h FE
VCE(sat)
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
VBE(sat)
I
C
= 3.0A I
B
= 400mA
I
C
= 6.5A I
B
= 1.5A
I
C
= 6.5A I
B
= 1.5A
1.0
1.0
1.5
I
E
= 1mA
I
C
= 10mA
BVCBO
BVCES
BVEBO
BVCEO(sus)
IC
ICM
PD
PD
Tstg
TJ
TL
1200
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watts
Watts
°C
°C
°C
8.0
500
15
150
-55 to +150
-55 to +150
260
MIN
8.0
500
TYP
MAX
UNIT
Vdc
Vdc
Vdc
Vdc
Vdc
mA
mA
mA
µA
mA
µA
-
-
-
-
-
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
V
CE
= 1200V
V
CE
= 850V
V
EB
= 8.0V
I
C
= 10A V
CE
= 5V
I
C
= 12A V
CE
= 5V
5.0
3.0
0.25
25
25
13
VBE(on)
Notes: *Pulse Width
≤300usec
2% Duty Cycle
Page 1 of 2
PT-1 02/19/01
TYPE:
MJW16206
SMALL SIGNAL CHARACTERISTICS
Current Gain at F =
Input Capacitance
Output Capacitance
V
CB
= 10V f = 100KHz
Transition Frequency
V
CE
= 10V I
C
= 0.5A f = 1MHz
Input Impedance
Voltage Feedback Ratio
Output Admittance
Noise Figure
SWITCHING CHARACTERISTICS
Resistive Load
Turn-On Time
Turn-Off Time
Delay Time
Rise Time
Storage Time
Fall Time
Inductive Load
Storage Time
Crossover Time
Fall Time
Storage Time
Crossover Time
Fall Time
FUNCTIONAL TEST
Common-Emitter Amplifier Power Gain
Power Output
Collector Efficiency
Power Output
Second Breakdown Collector Current
Thermal-Resistance, Junction to Case
SYMBOL
ton
toff
td
tr
ts
tf
SYMBOL
tsv
tc
tfi
tsv
tc
tfi
SYMBOL
GPE
Pout
η
Pout
IS/B
R
θJC
MIN
TYP
MAX
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
µs
µs
µs
µs
µs
µs
UNITS
ns
ns
ns
ns
ns
ns
UNITS
dB
Watt
%
Watt
A
NF
SYMBOL
h fe
Cib
Cob
fT
MIN
TYP
MAX
UNITS
-
pf
350
3.0
pf
MHz
Ohms
X10-4
µmhos
dB
2250
250
I
C
= 6.5A I
B
= 1.5A
0.67
°C/W
Page 2 of 2
PT-1
02/19/01
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