Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-247 package
・High
voltage ,high speed
APPLICATIONS
・Switching
Regulators
・Inverters
・Solenoids
・Relay
Drivers
・Motor
Controls
・Deflection
Circuits
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
MJW16018
・
Fig.1 simplified outline (TO-247) and symbol
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
D
T
j
T
stg
固电
Collector-base voltage
导½
半
PARAMETER
HA
INC
Collector current
Base current
Base current-Peak
Collector-emitter voltage
Emitter-base voltage
ES
NG
Open emitter
Open base
MIC
E
CONDITIONS
OR
CT
NDU
O
VALUE
1500
800
6
10
15
8
12
UNIT
V
V
V
A
A
A
A
W
℃
℃
Open collector
Collector current-Peak
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
T
C
=100℃
125
50
150
-55~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction to case
VALUE
1.0
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BEsat
I
CEV
I
CER
I
EBO
h
FE
C
OB
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector outoput capacitance
CONDITIONS
I
C
=50mA; I
B
=0
I
C
=5A ;I
B
=2A
T
C
=110℃
I
C
=10A ;I
B
=5A
I
C
=5A ;I
B
=2A
T
C
=110℃
V
CEV
=1500V,V
BE(off)
=1.5Vdc
T
C
=100℃
V
CE
=1500V; R
BE
=50Ω
T
C
=100℃
V
EB
=6V; I
C
=0
I
C
=5A ; V
CE
=5V
I
E
=0;f=1kHz ; V
CB
=10V
4
MIN
800
MJW16018
TYP.
MAX
UNIT
V
1.0
1.5
5.0
1.5
1.5
0.25
1.50
2.5
0.1
V
V
V
mA
mA
mA
Switching times resistive load
t
d
t
r
t
s
t
f
Delay time
Rise time
固电
导½
半
ANG
CH
IN
Storage time
Fall time
MIC
E SE
I
C
=5A; I
B1
= I
B2
=2.0A
V
CC
=250V ,R
B2
=3Ω
PW=25μs
Duty Cycle≤2%
DUC
ON
4.5
0.2
OR
T
450
0.2
2.0
9.0
0.4
pF
0.085
0.90
μs
μs
μs
μs
2