INCHANGE Semiconductor
isc
Product Specification
MJW16010A
isc
Silicon NPN Power Transistor
DESCRIPTION
·Low
Collector Saturation Voltage
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 500V(Min)
·Wide
Area of Safe Operation
APPLICATIONS
·Designed
for high-voltage, high-speed,power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line-operated switchmode applications.
Typical applications:
·Switching
regulators
·Inverters
·Solenoids
·Relay
drivers
·Motor
controls
·Deflection
circuits
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CEV
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-EmitterVoltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Base Current-Peak
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
1000
500
6
15
20
10
15
135
150
-55~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
I
BM
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
0.92
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
MJW16010A
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE(sat)-1
V
CE(sat)-2
V
BE(sat)
I
CEV
I
CER
I
EBO
h
FE
C
OB
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Output Capacitance
CONDITIONS
I
C
= 100mA ;I
B
=0
I
C
= 5A; I
B
= 1A
B
MIN
500
TYP.
MAX
UNIT
V
0.7
1.0
1.5
1.5
0.15
1.0
1.0
0.15
5
8
400
V
V
V
mA
mA
mA
I
C
= 10A; I
B
= 2A
I
C
= 10A; I
B
= 2A; T
C
=100℃
I
C
= 10A; I
B
= 2A
I
C
= 10A; I
B
= 2A; T
C
=100℃
V
CEV
=1000V;V
BE(
off
)
=1.5V
V
CEV
=1000V;V
BE(
off
)
=1.5V;T
C
=100℃
V
CE
= 1000V;R
BE
= 50Ω;T
C
=100℃
V
EB
= 6V; I
C
=0
I
C
= 15A ; V
CE
= 5V
I
E
= 0;V
CB
= 10V, f
test
= 1.0kHz
pF
Switching times;Resistive load(P
W
= 30μs; Duty Cycle≤2%)
t
d
t
r
t
stg
t
f
Delay Time
Rise Time
Storage Time
Fall Time
0.1
0.6
3.0
0.4
μs
μs
μs
μs
I
C
= 10A; I
B1
= 1.3A; I
B2
= 2.6A;
R
B2
= 1.6Ω; V
CC
= 250V
isc Website：www.iscsemi.cn
2
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