July 1996
NDS8858H
Complementary MOSFET Half Bridge
General Description
These Complementary MOSFET half bridge devices are
produced using Fairchild's proprietary, high cell density,
DMOS technology. This very high density process is
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage half bridge
applications or CMOS applications when both gates are
connected together.
Features
N-Channel 6.3A, 30V, R
DS(ON)
=0.035
Ω
@ V
GS
=10V.
P-Channel -4.8A, -30V, R
DS(ON)
=0.065
Ω
@ V
GS
=-10V.
High density cell design or extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
Matched pair for equal input capacitance and power capability
.
________________________________________________________________________________
V+
P-Gate
Vout
Vout
Vout
N -Gate
Vout
V-
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Maximum Power Dissipation
(Single Device)
T
J
,T
STG
T
A
= 25°C unless otherwise noted
N-Channel
30
20
(Note 1a &2)
P-Channel
-30
-20
-4.8
20
2.5
1.2
1
-55 to 150
Units
V
V
A
6.3
20
(Note 1a)
(Note 1b)
(Note 1c)
W
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Single Device)
(Note 1a)
Thermal Resistance, Junction-to-Case
(Single Device)
(Note 1a)
50
25
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
NDS8858H Rev. C
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
BV
DSS
I
DSS
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Conditions
V
GS
= 0 V, I
D
= 250 µA
V
GS
= 0 V, I
D
= -250 µA
V
DS
= 24 V, V
GS
= 0 V
T
J
= 55°C
V
DS
= -24 V, V
GS
= 0 V
T
J
= 55°C
I
GSSF
I
GSSR
V
GS(th)
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250 µA
T
J
= 125°C
V
DS
= V
GS
, I
D
= -250 µA
T
J
= 125°C
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 4.8 A
T
J
= 125°C
V
GS
= 4.5 V, I
D
= 3.7 A
V
GS
= -10 V, I
D
= -4.8 A
T
J
= 125°C
V
GS
= -4.5 V, I
D
= -3.7 A
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
V
GS
= 10 V, V
DS
= 5 V
V
GS
= -10 V, V
DS
= -5 V
V
DS
= 10 V, I
D
= 4.8 A
V
DS
= -10 V, I
D
= -4.8 A
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
N-Channel
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
P-Channel
V
DS
= -15 V, V
GS
= 0 V,
f = 1.0 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
720
690
370
430
250
160
pF
pF
pF
N-Ch
P-Ch
N-Ch
P-Ch
20
-20
10
7
S
P-Ch
N-Ch
P-Ch
All
All
N-Ch
1
0.7
-1
-0.7
1.6
1.2
-1.6
-1.2
0.033
0.046
0.046
0.052
0.075
0.085
P-Ch
Type
N-Ch
P-Ch
N-Ch
Min
30
-30
1
10
-1
-10
100
-100
2.8
2.2
-2.8
-2.2
0.035
0.063
0.05
0.065
0.13
0.1
A
Typ
Max
Units
V
V
µA
µA
µA
µA
nA
nA
V
OFF CHARACTERISTICS
ON CHARACTERISTICS
(Note 3)
Ω
NDS8858H Rev. C
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
N-Channel
V
DS
= 10 V,
I
D
= 4.8 A, V
GS
= 10 V
P-Channel
V
DS
= -10 V,
I
D
= -4.8 A, V
GS
= -10 V
Conditions
N-Channel
V
DD
= 10 V, I
D
= 1 A,
V
GEN
= 10 V, R
GEN
= 6
Ω
P-Channel
V
DD
= -10 V, I
D
= -1 A,
V
GEN
= -10 V, R
GEN
= 6
Ω
Type
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
t
rr
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
V
GS
= 0 V, I
S
= 2.0 A
V
GS
= 0 V, I
S
= -2.0 A
N-Ch
P-Ch
(Note 2)
(Note 2)
Min
Typ
12
9
13
20
29
40
10
19
19
21
2.1
3.2
5.2
5.2
Max
20
20
30
25
50
50
20
40
30
30
Units
ns
ns
ns
ns
nC
nC
nC
SWITCHING CHARACTERISTICS
(Note 2)
2
-2
0.9
-0.85
1.2
-1.2
100
100
A
V
ns
N-Ch
P-Ch
N-Ch
P-Ch
N-Channel
V
GS
= 0 V, I
F
= 2.0 A, dI
F
/dt = 100 A/µs
P-Channel
V
GS
= 0 V, I
F
= -2.0 A, dI
F
/dt = 100 A/µs
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
P
D
(
t
) =
R
θ
J A
t
)
(
T
J
−
T
A
=
T
J
−
T
A
R
θ
J C
R
θ
CA
t
)
+
(
=
I
2
(
t
) ×
R
DS
(
ON
)
D
T
J
Typical R
θ
JA
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 50
o
C/W when mounted on a 1 in
2
pad of 2oz copper.
b. 105
o
C/W when mounted on a 0.04 in
2
pad of 2oz copper.
c. 125 C/W when mounted on a 0.006 in pad of 2oz copper.
o
2
1a
1b
1c
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDS8858H Rev. C
Typical Electrical Characteristics
-20
25
V
GS
=10V
6.0 5.0
4.5
4.0
I
D
, DRAIN-SOURCE CURRENT (A)
-15
V
GS
= -10V
-6.0
I
D
, DRAIN-SOURCE CURRENT (A)
20
-5.0
-4.5
-4.0
15
3.5
10
-10
-3.5
-5
5
3.0
-3.0
0
0
0
0.5
1
1.5
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
2.5
3
0
-1
-2
-3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
-4
Figure 1. N-Channel On-Region Characteristics.
Figure 2. P-Channel On-Region Characteristics.
3
3
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 3.0V
2.5
DRAIN-SOURCE ON-RESISTANCE
V
GS
= -3.5V
3.5
R
DS(on)
, NORMALIZED
2.5
- 4.0
-4.5
-5.0
R
DS(ON)
, NORMALIZED
2
4.0
4.5
2
1.5
5.0
6.0
10
1.5
-6.0
-10
1
1
0.5
0
5
10
15
I
D
, DRAIN CURRENT (A)
20
25
0.5
0
-4
-8
-12
I
D
, DRAIN CURRENT (A)
-16
-20
Figure 3. N-Channel On-Resistance Variation with
Gate Voltage and Drain Current.
Figure 4. P-Channel On-Resistance Variation
with Gate Voltage and Drain Current.
1.6
1.6
DRAIN-SOURCE ON-RESISTANCE
I
D
= 4.8A
DRAIN-SOURCE ON-RESISTANCE
1.4
R
DS(ON)
, NORMALIZED
I
D
= -4.8A
1.4
V
GS
=10V
R
DS(ON)
, NORMALIZED
V
GS
= -10V
1.2
1.2
1
1
0.8
0.8
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
0.6
-50
-25
0
25
50
75
100
T , JUNCTION TEMPERATURE (°C)
J
125
150
Figure 5. N-Channel On-Resistance Variation
with Temperature.
Figure 6. P-Channel On-Resistance Variation
with Temperature.
NDS8858H Rev. C
Typical Electrical Characteristics
2
2
V
G S
= 10V
DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE ON-RESISTANCE
1.75
V
G S
= -10V
R
DS(ON)
, NORMALIZED
1.5
TJ = 125°C
R
DS(on)
, NORMALIZED
1.5
TJ = 125°C
1.25
25°C
1
25°C
1
-55°C
0.75
-55°C
0.5
0.5
0
5
10
15
I
D
, DRAIN CURRENT (A)
20
25
0
-4
I
D
-8
-12
, DRAIN CURRENT (A)
-16
-20
Figure 7. N-Channel On-Resistance Variation
with Drain Current and Temperature.
Figure 8. P-Channel On-Resistance Variation
with Drain Current and Temperature
.
25
-20
V
DS
= 10V
20
I
D
, DRAIN CURRENT (A)
TJ = -55°C
25°C
125°C
-15
I
D
, DRAIN CURRENT (A)
V
DS
= -10V
T J = -55°C
125°C
25°C
15
-10
10
-5
5
0
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
6
0
-1
-2
-3
-4
-5
V
GS
, GATE TO SOURCE VOLTAGE (V)
-6
Figure 9. N-Channel Transfer
Characteristics.
Figure 10. P-Channel Transfer
Characteristics.
1.2
GATE-SOURCE THRESHOLD VOLTAGE
GATE-SOURCE THRESHOLD VOLTAGE
1.2
1.1
V
DS
= V
GS
I
D
= 250µA
V
th
, NORMALIZED
1.1
V
DS
= V
G S
I
D
= -250µA
V
th
, NORMALIZED
1
1
0.9
0.9
0.8
0.8
0.7
0.7
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
Figure 11. N-Channel Gate Threshold Variation
with Temperature.
Figure 12. P-Channel Gate Threshold Variation
with Temperature.
NDS8858H Rev. C
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
