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NDS356AP
P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
SuperSOT
TM
-3
P-Channel logic level enhancement mode
power field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very high
density process is especially tailored to minimize on-state
resistance. These devices are particularly suited for low voltage
applications such as notebook computer power management,
portable electronics, and other battery powered circuits where
fast high-side switching, and low in-line power loss
are
needed in a very small outline surface mount package.
Features
-1.1 A, -30 V, R
DS(ON)
= 0.3
Ω
@ V
GS
=-4.5 V
R
DS(ON)
= 0.2
Ω
@ V
GS
=-10 V.
Industry standard outline SOT-23 surface mount package
using proprietary SuperSOT
TM
-3 design for superior
thermal and electrical capabilities.
High density cell design for extremely low R
DS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
,T
STG
Parameter
Drain-Source Voltage
T
A
= 25°C unless otherwise noted
NDS356AP
-30
±20
(Note 1a)
Units
V
V
A
Gate-Source Voltage - Continuous
Maximum Drain Current - Continuous
- Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1b)
±1.1
±10
0.5
0.46
-55 to 150
W
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
NDS356AP Rev.C
1
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= -250 µA
V
DS
= -24 V, V
GS
= 0 V
T
J
=55°C
I
GSSF
I
GSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20V, V
DS
= 0 V
-30
-1
-10
100
-100
V
µA
µA
nA
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
R
DS(ON)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 µA
T
J
=125°C
Static Drain-Source On-Resistance
V
GS
= -4.5 V, I
D
= -1.1 A
T
J
=125°C
V
GS
= -10 V, I
D
= -1.3 A
I
D(ON)
On-State Drain Current
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= -5 V, I
D
= -1.1 A
V
DS
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
-3
2
-0.8
-0.5
-1.6
-1.3
0.25
0.35
0.14
-2.5
-2.2
0.3
0.4
0.2
A
S
V
Ω
g
FS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
DYNAMIC CHARACTERISTICS
280
170
65
pF
pF
pF
SWITCHING CHARACTERISTICS
(Note 2)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= -10 V, I
D
= -1.1 A,
V
GS
= -5 V
V
DD
= -10 V, I
D
= -1 A,
V
GS
= -10 V, R
GEN
= 50
Ω
8
17
53
38
3.4
0.7
1.5
15
30
90
80
4.4
ns
ns
ns
ns
nC
nC
nC
NDS356AP Rev.C
1
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
I
SM
V
SD
Maximum Continuous Source Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -0.42
(Note 2)
-0.8
-0.42
-10
-1.2
A
A
V
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
P
D
(
t
) =
T
J
−T
A
R
θJA
(t)
=
T
J
−T
A
R
θJC
+R
θCA
(t)
=
I
2
(
t
) ×
R
DS(ON)@T
J
D
Typical R
θ
JA
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 250
o
C/W when mounted on a 0.02 in
2
pad of 2oz copper.
b. 270
o
C/W when mounted on a 0.001 in
2
pad of 2oz copper.
1a
1b
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDS356AP Rev.C
1
Typical Electrical Characteristics
-10
I
D
, DRAIN-SOURCE CURRENT (A)
2
-6.0
-5.5
-5.0
R
DS(on)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= -10V
-7.0
1.8
1.6
V
GS
= -3.5 V
-4.0
-8
-6
-4.5
-4.0
-3.5
1.4
-4.5
1.2
1
0.8
0.6
0.4
0
-2
-4
-6
I
D
, DRAIN CURRENT (A)
-8
-5.0
-5.5
-6.0
-7.0
-10
-4
-2
-3.0
0
0
-1
V
DS
-2
-3
-4
, DRAIN-SOURCE VOLTAGE (V)
-5
-10
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage
.
1.6
DRAIN-SOURCE ON-RESISTANCE
R
DS(on)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2
1.4
R
DS(ON)
, NORMALIZED
I
D
= -1.1A
V
GS
= -4.5V
V
GS
= -4.5V
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0
-2
I
D
TJ = 125°C
1.2
25°C
-55°C
1
0.8
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
-4
, DRAIN CURRENT (A)
-6
-8
Figure 3. On-Resistance Variation
with Temperature
.
Figure 4. On-Resistance Variation
with Drain Current and Temperature
.
-5
GATE-SOURCE THRESHOLD VOLTAGE
1.2
V
DS
= -10V
-4
T
J
= -55°C
25°C
125°C
V
GS(th)
, NORMALIZED
1.1
V
DS
= V
GS
I
D
=- 250µA
I
D
, DRAIN CURRENT (A)
-3
1
-2
0.9
-1
0.8
0
-1
-2
V
GS
-3
-4
, GATE TO SOURCE VOLTAGE (V)
-5
0.7
-50
-25
0
J
25
50
75
100
125
150
T , JUNCTION TEMPERATURE (°C)
Figure 5. Transfer Characteristics
.
Figure 6. Gate Threshold Variation
with Temperature
.
NDS356AP Rev.C
1
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