BR24L64-W / BR24L64F-W
Memory ICs
8k×8 bit electrically erasable PROM
BR24L64-W / BR24L64F-W
The BR24L64-W series is 2-wire (I C BUS type) serial EEPROMs which are electrically programmable.
∗
I
2
C BUS is a registered trademark of Philips.
2
!Applications
General purpose
!Features
1) 8k registers
×
8 bits serial architecture.
2) Single power supply (1.8V to 5.5V).
3) Two wire serial interface.
4) Automatic erase.
5) 32 byte page write mode.
6) Low power consumption.
Write
(5V) : 1.5mA (Typ.)
Read (5V) : 0.2mA (Typ.)
Standby (5V) : 0.1µA (Typ.)
7) DATA security
Write protect feature (WP pin) .
Inhibit to WRITE at low V
CC
.
8) Small package - - - DIP8 / SOP8 pin
9) High reliability EEPROM with Double-Cell structure
10) High reliability fine pattern CMOS technology.
11) Endurance : 1,000,000 erase / write cycles
12) Data retention : 40 years
13) Filtered inputs in SCL
•
SDA for noise suppression.
14) Initial data FFh in all address.
!Absolute
maximum ratings
(Ta=25°C)
Parameter
Supply voltage
Symbol
V
CC
Limits
−0.3
to
+6.5
800(DIP8)
Power dissipation
Storage temperature
Operating temperature
Terminal voltage
Pd
Tstg
Topr
−
450(SOP8)
−65
to
+125
−40
to
+85
−0.3
to
V
CC
+0.3
∗1
∗2
Unit
V
mW
°C
°C
V
∗1
Degradation is done at 8.0mW/°C for operation above 25°C.
∗2
Degradation is done at 4.5mW/°C for operation above 25°C.
1/25
BR24L64-W / BR24L64F-W
Memory ICs
!Recommended
operating conditions
Parameter
Supply voltage
Input voltage
Symbol
V
CC
V
IN
Limits
1.8 to 5.5
0 to V
CC
Unit
V
V
!DC
operating characteristics
(Unless otherwise specified Ta=−40 to 85°C, VCC=1.8 to 5.5V)
Parameter
"HIGH" input volatge 1
"LOW" input volatge 1
"HIGH" input volatge 2
"LOW" input volatge 2
"LOW" output volatge 1
"LOW" output volatge 2
Input leakage current
Output leakage current
Symbol
V
IH1
V
IL1
V
IH2
V
IL2
V
OL1
V
OL2
I
LI
I
LO
I
CC1
Operating current
I
CC2
Standby current
I
SB
−
−
−
−
0.5
2.0
mA
µA
Min.
0.7V
CC
−
0.8V
CC
−
−
−
−1
−1
−
Typ.
−
−
−
−
−
−
−
−
−
Max.
−
0.3V
CC
−
0.2V
CC
0.4
0.2
1
1
3.0
Unit
V
V
V
V
V
V
µA
µA
mA
Conditions
2.5V≤V
CC
≤5.5V
2.5V≤V
CC
≤5.5V
1.8V≤V
CC
≤2.5V
1.8V≤V
CC
≤2.5V
I
OL
=3.0mA,
2.5V≤V
CC
≤5.5V,
(SDA)
I
OL
=0.7mA,
1.8V≤V
CC
≤5.5V,
(SDA)
V
IN
=0V
to V
CC
V
OUT
=0V
to V
CC
V
CC
=5.5V,
f
SCL
=400kHz,
t
WR
=5ms,
Byte Write, Page Write
V
CC
=5.5V,
f
SCL
=400kHz
Random Read, Current Read,
Sequential Read
V
CC
=5.5V,
SDA·SCL=V
CC
,
A0, A1, A2=GND, WP=GND
This product is not designed for protection against radioactive rays.
2/25
BR24L64-W / BR24L64F-W
Memory ICs
!AC
operating characteristics
(Unless otherwise specified Ta=−40 to 85°C, V
CC
=1.8 to 5.5V)
Parameter
Clock frequency
Data clock "HIGH" period
Data clock "LOW" period
SDA and SCL rise time
SDA and SCL fall time
Start condition hold time
Start condition setup time
Input data hold time
Input data setup time
Output data delay time
Output data hold time
Stop condition setup time
Bus free time
Write cycle time
Noise spike width (SDA and SCL)
WP hold time
WP setup time
WP high period
∗1
Not 100% tested.
∗1
∗1
Symbol
fSCL
tHIGH
tLOW
tR
tF
Fast-mode
2.5V
≤
Vcc
≤
5.5V
Min.
−
0.6
1.2
−
−
0.6
0.6
0
100
0.1
0.1
0.6
1.2
−
−
0
0.1
1.0
Typ.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max.
400
−
−
0.3
0.3
−
−
−
−
0.9
−
−
−
5
0.1
−
−
−
Standard-mode
1.8V
≤
Vcc
≤
5.5V
Min.
−
4.0
4.7
−
−
4.0
4.7
0
250
0.2
0.2
4.7
4.7
−
−
0
0.1
1.0
Typ.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max.
100
−
−
1.0
0.3
−
−
−
−
3.5
−
−
−
5
0.1
−
−
−
Unit
kHz
µs
µs
µs
µs
µs
µs
ns
ns
µs
µs
µs
µs
ms
µs
ns
µs
µs
tHD:STA
tSU:STA
tHD:DAT
tSU:DAT
tPD
tDH
tSU:STO
tBUF
tWR
tl
tHD:WP
tSU:WP
tHIGH:WP
5/25
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