Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
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use
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
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Team Nexperia
NXP Semiconductors
Product data sheet
PNP general purpose double transistor
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 40 V)
•
Reduces number of components and boardspace.
APPLICATIONS
•
General purpose switching and amplification.
handbook, halfpage
PUMT1
PINNING
PIN
1, 4
2, 5
3, 6
emitter
base
collector
DESCRIPTION
TR1; TR2
TR1; TR2
TR2; TR1
6
5
4
5
4
6
DESCRIPTION
Two independently operating PNP transistors in an SC-88;
SOT363 plastic package. NPN complement: PUMX1.
1
2
3
1
MAM339
TR2
TR1
MARKING
TYPE NUMBER
PUMT1
MARKING CODE
FtF
Top view
2
3
Fig.1
Simplified outline (SC-88; SOT363)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per transistor
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Per device
P
tot
Note
1. Device mounted on an FR4 printed-circuit board.
total power dissipation
T
amb
≤
25
°C;
note 1
−
300
mW
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
−50
−40
−5
−100
−200
−200
200
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
2001 Dec 19
2
NXP Semiconductors
Product data sheet
PNP general purpose double transistor
THERMAL CHARACTERISTICS
SYMBOL
Per device
R
th j-a
Note
1. Device mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C;
unless otherwise specified.
SYMBOL
Per transistor
I
CBO
I
EBO
h
FE
V
CEsat
C
c
f
T
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
collector capacitance
transition frequency
I
E
= 0; V
CB
=
−30
V
I
E
= 0; V
CB
=
−30
V; T
j
= 150
°C
I
C
= 0; V
EB
=
−4
V
I
C
=
−1
mA; V
CE
=
−6
V
I
C
= 50 mA; I
B
=
−5
mA; note 1
I
E
= i
e
= 0; V
CB
=
−12
V; f = 1 MHz
I
C
=
−2
mA; V
CE
=
−12
V; f = 100 MHz
−
−
−
120
−
−
100
PARAMETER
CONDITIONS
MIN.
thermal resistance from junction to ambient
note 1
416
PARAMETER
CONDITIONS
VALUE
PUMT1
UNIT
K/W
MAX.
−100
−10
−100
−
−200
2.2
−
UNIT
nA
μA
nA
mV
pF
MHz
2001 Dec 19
3
NXP Semiconductors
Product data sheet
PNP general purpose double transistor
PACKAGE OUTLINE
PUMT1
Plastic surface mounted package; 6 leads
SOT363
D
B
E
A
X
y
HE
v
M
A
6
5
4
Q
pin 1
index
A
A1
1
e1
e
2
bp
3
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A1
max
0.1
bp
0.30
0.20
c
0.25
0.10
D
2.2
1.8
E
1.35
1.15
e
1.3
e
1
0.65
HE
2.2
2.0
Lp
0.45
0.15
Q
0.25
0.15
v
0.2
w
0.2
y
0.1
OUTLINE
VERSION
SOT363
REFERENCES
IEC
JEDEC
EIAJ
SC-88
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
2001 Dec 19
4
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