Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
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use
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
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-
© Nexperia B.V. (year). All rights reserved.
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Team Nexperia
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D087
PZTA44
NPN high-voltage transistor
Product data sheet
Supersedes data of 1998 Nov 26
1999 May 21
NXP Semiconductors
Product data sheet
NPN high-voltage transistor
FEATURES
•
Low current (max. 300 mA)
•
High voltage (max. 400 V).
APPLICATIONS
•
Telecommunication.
DESCRIPTION
NPN high-voltage transistor in a SOT223 plastic package.
1
4
PZTA44
PINNING
PIN
1
2, 4
3
base
collector
emitter
DESCRIPTION
handbook, halfpage
2, 4
3
1
Top view
2
3
MAM287
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
500
400
6
300
300
100
1.35
+150
150
+150
V
V
V
mA
mA
mA
W
°C
°C
°C
UNIT
1999 May 21
2
NXP Semiconductors
Product data sheet
NPN high-voltage transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Note
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
CONDITIONS
note 1
VALUE
91
10
PZTA44
UNIT
K/W
K/W
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 400 V
I
E
= 0; V
CB
= 400 V; T
j
= 150
°C
I
C
= 0; V
EB
= 4 V
V
CE
= 10 V
I
C
= 1 mA
I
C
= 10 mA
I
C
= 50 mA; note 1
I
C
= 100 mA; note 1
V
CEsat
collector-emitter saturation voltage
I
C
= 1 mA; I
B
= 0.1 mA
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 5 mA; note 1
V
BEsat
C
c
C
e
f
T
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
I
C
= 10 mA; I
B
= 1 mA; note 1
I
E
= i
e
= 0; V
CB
= 20 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 500 mV;
f = 1 MHz
I
C
= 10 mA; V
CE
= 10 V;
f = 100 MHz
40
50
45
40
−
−
−
−
−
−
20
−
200
−
−
400
500
750
850
7
180
−
mV
mV
mV
mV
pF
pF
MHz
−
−
−
MIN.
MAX.
100
10
100
UNIT
nA
µA
nA
1999 May 21
3
NXP Semiconductors
Product data sheet
NPN high-voltage transistor
PACKAGE OUTLINE
PZTA44
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
SOT223
D
B
E
A
X
c
y
H
E
b
1
v
M
A
4
Q
A
A
1
1
e
1
e
2
b
p
3
w
M
B
detail X
L
p
0
2
scale
4 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.8
1.5
A
1
0.10
0.01
b
p
0.80
0.60
b
1
3.1
2.9
c
0.32
0.22
D
6.7
6.3
E
3.7
3.3
e
4.6
e
1
2.3
H
E
7.3
6.7
L
p
1.1
0.7
Q
0.95
0.85
v
0.2
w
0.1
y
0.1
OUTLINE
VERSION
SOT223
REFERENCES
IEC
JEDEC
EIAJ
SC-73
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
1999 May 21
4
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