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HB56UW472EJN-7L

产品描述EDO DRAM Module, 4MX72, 70ns, CMOS, DIMM-168
产品类别存储    存储   
文件大小493KB,共35页
制造商Hitachi (Renesas )
官网地址http://www.renesas.com/eng/
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HB56UW472EJN-7L概述

EDO DRAM Module, 4MX72, 70ns, CMOS, DIMM-168

HB56UW472EJN-7L规格参数

参数名称属性值
零件包装代码DIMM
包装说明DIMM, DIMM168
针数168
Reach Compliance Codeunknown
ECCN代码EAR99
访问模式EDO
最长访问时间70 ns
I/O 类型COMMON
JESD-30 代码R-XDMA-N168
内存密度301989888 bit
内存集成电路类型EDO DRAM MODULE
内存宽度72
功能数量1
端口数量1
端子数量168
字数4194304 words
字数代码4000000
工作模式ASYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织4MX72
输出特性3-STATE
封装主体材料UNSPECIFIED
封装代码DIMM
封装等效代码DIMM168
封装形状RECTANGULAR
封装形式MICROELECTRONIC ASSEMBLY
电源3.3 V
认证状态Not Qualified
刷新周期4096
座面最大高度25.4 mm
自我刷新YES
最大待机电流0.0018 A
最大压摆率1.26 mA
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)3 V
标称供电电压 (Vsup)3.3 V
表面贴装NO
技术CMOS
温度等级COMMERCIAL
端子形式NO LEAD
端子节距1.27 mm
端子位置DUAL
Base Number Matches1

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HB56UW472EJN Series,
HB56UW464EJN Series
4,194,304-word
×
72-bit High Density Dynamic RAM Module
4,194,304-word
×
64-bit High Density Dynamic RAM Module
ADE-203-718A (Z)
Rev.1.0
Jan. 27, 1997
Description
The HB56UW472EJN, HB56UW464EJN belong to 8 Byte DIMM (Dual In-line Memory Module) family,
and have been developed as an optimized main memory solution for 4 and 8 Byte processor applications.
The HB56UW472EJN is a 4M
×
72 dynamic RAM module, mounted 18 pieces of 16-Mbit DRAM
(HM51W16405) sealed in SOJ package and 1 pieces of serial EEPROM (24C02) for Presence Detect (PD).
The HB56UW464EJN is a 4M
×
64 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM
(HM51W16405) sealed in SOJ package and 1 pieces of serial EEPROM (24C02) for Presence Detect (PD).
The HB56UW472EJN, HB56UW464EJN offer Extended Data Out (EDO) Page Mode as a high speed
access mode. An outline of the HB56UW472EJN, HB56UW464EJN is 168-pin socket type package (dual
lead out). Therefore, the HB56UW472EJN, HB56UW464EJN make high density mounting possible
without surface mount technology. The HB56UW472EJN, HB56UW464EJN provide common data inputs
and outputs. Decoupling capacitors are mounted on the module board.
Features
168-pin socket type package (Dual lead out)
Outline: 133.35 mm (Length)
×
25.40 mm (Height)
×
9.00 mm (Thickness)
Lead pitch: 1.27 mm
Single 3.3 V (±0.3 V) supply
High speed
Access time: t
RAC
= 50/60/70ns (max)
t
CAC
= 13/15/18ns (max)
Low power dissipation
Active mode: 5.83/5.18/4.54 W (max) (HB56UW472EJN Series)
5.18/4.61/4.03 W (max) (HB56UW464EJN Series)
Standby mode (TTL): 129.6 mW (max) (HB56UW472EJN Series)
(TTL): 115.2 mW (max) (HB56UW464EJN Series)
(CMOS): 6.48 mW (max) (L-version) (HB56UW472EJN Series)
(CMOS): 5.76 mW (max) (L-version) (HB56UW464EJN Series)

 
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