MJD45H11 — PNP Epitaxial Silicon Transistor
April 2010
MJD45H11
PNP Epitaxial Silicon Transistor
Applications
• General Purpose Power and Switching Such as Output or Driver Stages in Applications
• D-PAK for Surface Mount Applications
Features
•
•
•
•
•
Load Formed for Surface Mount Application (No Suffix)
Straight Lead (I-PAK: “-I” Suffix)
Electrically Similar to Popular MJE45H
Fast Switching Speeds
Low Collector Emitter Saturation Voltage
1
D-PAK
1.Base
1
I-PAK
3.Emitter
2.Collector
Absolute Maximum Ratings
Symbol
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
T
A
= 25°C unless otherwise noted
Parameter
Value
- 80
-5
-8
- 16
20
1.75
150
- 55 to +150
Units
V
V
A
A
W
W
°C
°C
Collector Dissipation (T
C
=25°C)
Collector Dissipation (T
A
=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics
Symbol
I
CEO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
C
ob
t
ON
t
STG
t
F
T
A
= 25°C unless otherwise noted
Parameter
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Collector Capacitance
Turn On Time
Storage Time
Fall Time
Test Condition
I
C
= - 30mA, I
B
= 0
V
CE
= - 80V, I
B
= 0
V
BE
= - 5V, I
C
= 0
V
CE
= - 1V, I
C
= - 2A
V
CE
= - 1V, I
C
= - 4A
I
C
= - 8A, I
B
= - 0.4A
I
C
= - 8A, I
B
= - 0.8A
V
CE
= - 10A, I
C
= - 0.5A
V
CB
= - 10V, f = 1MHz
I
C
= - 5A
I
B1
= - I
B2
= - 0.5A
Min.
- 80
Typ.
Max.
- 10
- 50
Units
V
µA
µA
V
CEO
(sus) *Collector-Emitter Sustaining Voltage
60
40
-1
- 1.5
40
230
135
500
100
V
V
MHz
pF
ns
ns
ns
* Pulse Test: PW≤300µs, Duty Cycle≤2%
© 2010 Fairchild Semiconductor Corporation
MJD45H11 Rev. C3
1
www.fairchildsemi.com
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intended to be an exhaustive list of all such trademarks.
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®
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®
®
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*
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®
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OPTOLOGIC
®
®
OPTOPLANAR
®
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®
PowerXS™
Programmable Active Droop
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®
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Quiet Series
RapidConfigure
Saving our world, 1mW/W/kW at a time™
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®
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SuperSOT -3
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®
*
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®
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TinyPower
TinyPWM
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TriFault Detect
TRUECURRENT *
SerDes
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®
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As used herein:
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and (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Obsolete
Product Status
Formative / In Design
First Production
Full Production
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I47
© Fairchild Semiconductor Corporation
www.fairchildsemi.com
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