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1N6690_1

产品描述20 A, 600 V, SILICON, RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小41KB,共2页
制造商SSDI
官网地址http://www.ssdi-power.com/
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1N6690_1概述

20 A, 600 V, SILICON, RECTIFIER DIODE

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Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
1N6690-1N6693
and
1N6690US-1N6693US
20 AMP
600-1200 Volts
75 nsec
ULTRA FAST RECTIFIER
Features:
Replaces DO-4 and DO-5
Ultra Fast Recovery
PIV to 1200 Volts
Low Reverse Leakage
Hermetically Sealed Void-Free Construction
3/
Monolithic Single Chip Construction
High Surge Rating
Low Thermal Resistance
Available in Surface Mount Versions (-US Suffix) and in
Button Tab Mounting (See Data Sheet RU0129).
TX, TXV, and S-Level Screening Available
2/
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1N66 __ __ __
L
L
Screening
2/
1/
Package
= None
TX = TX Level
TXV = TXV Level
S = S Level
____
= Axial
SMS = Surface Mount Square Tab
L
Voltage
90 = 600 V
91 = 800 V
92 = 1000 V
93 = 1200 V
Maximum Ratings
Peak Repetitive Reverse and
DC Blocking Voltage
1N6690 & 1N6690US
1N6691 & 1N6691US
1N6692 & 1N6692US
1N6693 & 1N6693US
Symbol
V
RRM
V
RWM
V
R
Io
Value
600
800
1000
1200
Units
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, T
A
= 100ºC)
Repetitive Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to
Reach Equilibrium Between Pulses, T
A
= 25ºC)
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Leads, L = 3/8 "
Junction to End Tab
20
Amps
I
FSM
Top & Tstg
R
θJL
R
θJE
375
-65 to +175
3.0
2.5
Amps
ºC
ºC/W
Notes:
1/ For Ordering Information, Price, Operating Curves, and Availability – Contact Factory.
2/ Screening Based on MIL-PRF-19500. Specifics Available on Request.
3/ PIND Testing not Required on Void Free Devices per MIL-PRF-19500.
Axial Leaded
SMS
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0143D
DOC

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