CHA6517
RoHS COMPLIANT
6 - 18 GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The
CHA6517
is a Dual channel
monolithic three-stage GaAs high power
amplifier designed for wide band
applications.
This device is manufactured using a UMS
0.25 µm Power pHEMT process, including,
via holes through the substrate and air
bridges.
To simplify the assembly process:
•
the backside of the chip is both RF and
DC grounded
•
bond pads and back side are gold
plated for compatibility with eutectic die
attach method and thermosonic or
thermocompression bonding process.
Output Power versus Frequency
Vg
Vd3
Main Features
0.25 µm Power pHEMT Technology
6 – 18 GHz Frequency Range
32dBm Output Power per channel
Compatible for balanced configuration
22dB nominal Gain
Quiescent Bias point : 600mA @ 8V
per channel
Chip size: 4.32 x 3.90 x 0.07 mm
INPUT A
OUTPUT A
Vd1
Vd2
Vd3
INPUT B
OUTPUT B
Vg
Vd3
Main Characteristics
Tamb = +25° (Tamb is the back-side of the chip)
C
Symbol
F_op
Psat
G_lin
Parameter
Operating frequency range
Saturated output power
Linear gain
Min
6
30
19
32
22
Typ
Max
18
Unit
GHz
dBm
dB
Ref. : DSCHA6517-8205 - 25 Jun 08
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA6517
Electrical Characteristics
X-band High Power Amplifier
Tamb = 25° (2), Vd=8V, Id (Quiescient) = 0.6A, Pu lsed biasing mode, each channel
C
Symbol
F_op
G_lin
RL_in
RL_out
Psat
PAE_sat
Vd
Id
Vg
Top
Parameter
Operating frequency
Linear gain (Pin=-5dBm)
Input Return Loss
Output Return Loss
Saturated output power (Pin=11dBm)
Power Added Efficiency in saturation
Positive supply voltage
Power supply quiescent current (1)
Negative supply voltage
Operating temperature range (2)
Min
6
19
Typ
22
-14
-8
32
15
8
0.6
-0.4
Max
18
-8
-4
30
-40
+70
Unit
GHz
dB
dB
dB
dBm
%
V
A
V
°
C
(1) This parameter is fixed by gate voltage Vg
(2) The reference is the back-side of the chip
Absolute Maximum Ratings (1)
Symbol
Pin (2)
Vd (2)
Id (2)
Pd (2)
Tj
Tstg
(1)
(2)
Parameter
Maximum Input power
Positive supply voltage without RF power
Positive supply quiescent current
Power dissipation
Junction temperature
Storage temperature range
Values
19
8.5
1
13.5
175
-55 to +125
Unit
dBm
V
A
W
°
C
°
C
Operation of this device above anyone of these parameters may cause permanent damage.
These values are specified for Tamb = 25°
C
Ref. : DSCHA6517-8205 - 25 Jun 08
2/10
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
X-band High Power Amplifier
Typical measured characteristics
On Wafer Measurements, S parameters (one channel):
Tamb=25° Vd=8V, Id (Quiescient) = 0.6A, pulsed mo de:
C,
CHA6517
Gain
dBS22
dBS11
Input and Output Return losses
Ref. : DSCHA6517-8205 - 25 Jun 08
3/10
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA6517
X-band High Power Amplifier
On Wafer Measurements (one channel):
Tamb=25° Vd=8V, Id (Quiescient) = 0.6A, Pin=11dBm , pulsed mode:
C,
Output Power versus Frequency
18GH
z
12GHz
6GHz
Id versus Pin
Ref. : DSCHA6517-8205 - 25 Jun 08
4/10
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
X-band High Power Amplifier
In test jig Measurements (one channel):
Vd=8V, Id (Quiescient) = 0.6A, S parameters, CW mode:
Temp= -40°
C
Temp= +25°
C
Temp= +70°
C
CHA6517
Gain versus Frequency and Temperature (-40° +25° and +70°
C,
C
C)
dBS22
dBS11
Input and Output Return losses versus Frequency and Temperature
Ref. : DSCHA6517-8205 - 25 Jun 08
5/10
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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