CHA3514
RoHS COMPLIANT
6-18GHz 4 bit Digital Variable Amplifier
GaAs Monolithic Microwave IC
Description
The CHA3514 is composed by a two stage
travelling wave amplifier followed by a four
steps digital attenuator. It is designed for
defense applications. The backside of the
chip is both RF and DC grounded. This helps
to simplify the assembly process.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
Main Features
■
Performances: 6-18GHz
■
19dBm saturated output power
■
13 dB gain
■
4bit attenuator for 39.5dB dynamic range
■
DC power consumption, 190mA @ 4.5V
■
Chip size:
5.54 x 2.30 x 0.1mm
Typical on wafer Measurements
Gain versus attenuation states
Main Characteristics
Tamb. = 25°
C
Symbol
Fop
G
Psat
ATT dyn
Parameter
Operating frequency range
Small signal gain @ Attenuator state 0dB
Saturated Output power @ Attenuator state 0dB
Attenuator range with 4bit
Min
6
Typ
13
19
39.5
Max
18
Unit
GHz
dB
dBm
dB
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. DSCHA3514-8144 - 23 May 08
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3514
6-18GHz Digital Variable Amplifier
Electrical Characteristics on wafer
Tamb = +25°
C
Vd = Pads B, D = 4.5V, Vg = Pads A, E tuned for Id = 190mA
Symbol
Fop
G
ATT bit
Parameter
Operating frequency range (1)
Small signal gain @ Attenuator state 0dB (1)
Attenuator bit: State 2.5dB
State 5dB
State 10 dB
State 20dB
Min
6
11
2
4
9
19
35
Typ
Max
18
Unit
GHz
dB
13
2.6
5
10
22
39.5
18
3.5
6
11
23
dB
dB
dB
dB
dB
dBm
ATT dyn
P1dB
Attenuator dynamic range with 4bit
Output power at 1dB compression @ Attenuator
state 0dB (1)
Saturated Output power @ Attenuator state 0dB
(1)
Noise figure @ Attenuator state 0dB
Input Return Loss all attenuator states
Output Return Loss all attenuator states
Drain bias DC voltage (
Pads B,D)
Bias current @ small signal
Control voltage for Attenuator bits
Psat
19
dBm
NF
RL_IN
RL_OUT
Vd
Id
Vc
7
-13
-15
4.5
190
-5
250
0
-8
-9
dB
dB
dB
V
mA
V
(1) These values are representative for on-wafer measurements that are made without bonding
wires at the RF ports.
Ref. : DSCHA3514-8144 - 23 May 08
2/10
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
6-18GHz Digital Variable Amplifier
CHA3514
Absolute Maximum Ratings
Tamb. = 25° (1)
C
Symbol
Vd
Id
Vg
Vc
Pin
Tch
Ta
Tstg
Parameter
Maximum Drain bias voltage ( Pads B,D)
Drain bias current with Vd=4.5V
Gate bias voltage (Pads A, E)
Attenuator bits control voltage
Maximum input power overdrive (2)
Maximum channel temperature
Operating temperature range
Storage temperature range
Values
+5
320
-2 to +0.4
-7 to +0.6
+20.0
+175
-40 to +70
-55 to +125
Unit
V
mA
V
V
dBm
°
C
°
C
°
C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
4bit VGA Control interface
The attenuator states are controlled by 8 voltages.
Theoretical
attenuation
dB
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0 référence
2.5
5
7.5
10
12.5
15
17.5
20
22.5
25
27.5
30
32.5
35
37.5
Voltage CONTROL PAD
10A
(V)
10B
(V)
5A
(V)
5B
(V)
2.5A
(V)
2.5B
(V)
20A
(V)
20B
(V)
state
-5
-5
-5
-5
0
0
0
0
-5
-5
-5
-5
0
0
0
0
0
0
0
0
-5
-5
-5
-5
0
0
0
0
-5
-5
-5
-5
-5
-5
0
0
-5
-5
0
0
-5
-5
0
0
-5
-5
0
0
0
0
-5
-5
0
0
-5
-5
0
0
-5
-5
0
0
-5
-5
-5
0
-5
0
-5
0
-5
0
-5
0
-5
0
-5
0
-5
0
0
-5
0
-5
0
-5
0
-5
0
-5
0
-5
0
-5
0
-5
-5
-5
-5
-5
-5
-5
-5
-5
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
-5
-5
-5
-5
-5
-5
-5
-5
Ref. : DSCHA3514-8144 - 23 May 08
3/10
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3514
6-18GHz Digital Variable Amplifier
Typical chip on wafer Sij parameters for reference state
Tamb 25° B = D = 4.5V, Id = 190mA, 10A, 5A, 2.5A, 20A = -5V, 10B, 5B, 2.5B, 20B = 0V
C,
Freq (GHz)
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
11.0
11.5
12.0
12.5
13.0
13.5
14.0
14.5
15.0
15.5
16.0
16.5
17.0
17.5
18.0
18.5
19.0
19.5
20.0
20.5
21.0
21.5
22.0
22.5
23.0
23.5
24.0
dB(S11)
-0.8
-1.5
-2.1
-2.8
-4.1
-5.1
-6.3
-7.8
-9.3
-10.7
-12.2
-13.8
-15.0
-15.6
-16.2
-16.6
-16.1
-15.3
-14.6
-14.0
-13.0
-12.2
-11.8
-11.5
-11.2
-11.6
-12.5
-13.1
-13.2
-14.1
-15.7
-18.0
-19.7
-16.8
-12.7
-9.9
-7.1
-5.3
-4.1
-3.3
-2.8
-2.6
-2.4
-2.2
-2.2
-2.1
-2.1
P(S11) (°
)
-42.4
-62.3
-81.0
-99.6
-116.9
-133.6
-148.7
-162.3
-175.1
174.7
167.3
161.4
157.0
155.3
156.1
154.3
151.1
148.6
145.0
136.7
127.2
119.0
108.7
96.1
83.5
73.4
64.6
57.6
52.4
44.8
40.2
39.2
66.0
97.0
96.4
89.2
80.6
68.5
54.4
41.5
30.8
21.1
11.6
3.5
-3.3
-10.1
-16.9
dB(S21)
-44.8
-24.1
-6.6
2.5
8.3
11.0
12.4
13.3
13.9
14.3
14.6
14.9
15.1
15.2
15.3
15.4
15.5
15.5
15.5
15.5
15.5
15.5
15.5
15.4
15.3
15.2
15.3
15.4
15.5
15.5
15.4
15.3
14.9
14.5
13.8
12.7
10.3
6.6
2.6
-0.8
-3.6
-5.8
-7.7
-9.3
-10.6
-11.9
-13.2
P(S21) (°
)
-114.9
-166.4
156.9
94.4
37.6
-17.7
-65.1
-107.0
-145.1
178.9
144.5
111.4
79.3
47.9
16.9
-13.7
-44.0
-73.9
-103.8
-133.5
-163.1
167.2
137.5
107.7
77.9
49.1
20.1
-10.6
-42.1
-74.7
-108.3
-143.1
-178.3
144.9
105.1
64.1
19.1
-19.0
-47.9
-70.2
-89.1
-107.0
-125.3
-143.8
-162.9
176.9
156.5
dB(S12)
-69.9
-69.2
-67.0
-61.4
-69.4
-86.1
-78.4
-72.8
-70.0
-68.7
-66.8
-64.9
-67.2
-62.7
-59.7
-57.5
-55.6
-54.7
-53.2
-54.7
-56.0
-56.4
-59.8
-76.5
-65.0
-60.2
-59.5
-55.2
-49.9
-45.5
-43.7
-42.0
-41.7
-41.5
-41.0
-42.1
-45.0
-50.6
-54.4
-53.6
-54.2
-54.2
-55.5
-58.9
-62.1
-65.9
-62.2
P(S12) (°
)
-91.3
-148.8
-165.4
-179.5
74.2
97.0
133.3
112.9
77.8
34.4
-5.4
-37.6
-61.6
-85.6
-109.9
-138.0
-167.3
171.2
136.4
117.6
96.6
74.2
43.6
22.9
178.8
148.9
146.9
142.1
141.5
117.2
87.3
61.2
36.3
14.5
-13.7
-42.4
-76.5
-91.9
-69.2
-67.9
-66.0
-73.1
-89.7
-95.4
-90.4
-60.7
-32.7
dB(S22)
-3.3
-4.6
-7.2
-10.5
-14.8
-17.4
-16.9
-15.5
-14.4
-13.5
-12.9
-12.4
-12.1
-12.0
-12.2
-12.7
-13.6
-15.1
-17.3
-20.4
-23.7
-24.5
-22.9
-21.9
-20.1
-17.4
-15.1
-13.5
-12.6
-12.6
-13.9
-16.6
-21.3
-22.3
-17.6
-15.1
-15.6
-20.1
-29.1
-19.5
-14.7
-12.0
-10.4
-9.4
-8.8
-8.6
-8.6
P(S22) (°
)
-59.4
-89.6
-122.7
-160.5
147.5
88.8
43.1
15.9
-2.5
-17.5
-30.6
-42.3
-54.0
-66.0
-78.5
-90.1
-102.2
-113.3
-123.0
-125.3
-113.1
-88.9
-73.3
-66.9
-59.5
-59.3
-68.1
-81.7
-99.9
-121.4
-146.5
-177.9
136.0
46.6
-12.9
-51.6
-84.5
-107.2
-59.0
-18.0
-29.5
-43.1
-56.0
-69.1
-81.5
-92.4
-102.8
Ref. : DSCHA3514-8144 - 23 May 08
4/10
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
6-18GHz Digital Variable Amplifier
Typical on wafer Measurements @ 25°
C
Bias conditions: Vd = 4.5V, Vg tuned for Id = 190mA
CHA3514
Linear Gain versus attenuator states
Bit 2.5dB
Bit 5dB
Bit 10dB
Bit 20dB
Attenuator bit values vs frequency for main states
Ref. : DSCHA3514-8144 - 23 May 08
5/10
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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