CHA2066
RoHS COMPLIANT
10-16GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2066 is a two-stage wide band
monolithic low noise amplifier.
The circuit is manufactured with a standard
HEMT process : 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
It is supplied in chip form.
A
B
C
D
E
NC
G1
7272
NC
G2
Vd
RFin
RFout
UMS
Gain ( dB )
18
16
14
12
10
8
6
4
2
0
7
8
9
10 11 12 13 14 15 16 17 18 19 20
Frequency ( GHz )
0
1
2
3
4
¦
Broad band performance 10-16GHz
¦
2.0dB noise figure, 10-16GHz
¦
16dB gain,
±
0.5dB gain flatness
¦
Low DC power consumption, 50mA
¦
20dBm 3rd order intercept point
¦
Chip size : 1,52 x 1,08 x 0.1mm
On wafer typical measurements.
Main Characteristics
Tamb = +25°C
Symbol
NF
G
∆G
Parameter
Noise figure, 10-16GHz
Gain
Gain flatness
14
Min
Typ
2.0
16
±
0.5
±
1.0
Max
2.5
Unit
dB
dB
dB
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHA20664281 - 07 Oct 04
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Noise Figure ( dB )
Main Features
20
5
CHA2066
Electrical Characteristics
Tamb = +25°C, Vd = +4V
Symbol
Parameter
10-16GHz Low Noise Amplifier
Test
Condi
tions
Min
Typ
Max
Unit
Fop
G
∆G
NF
VSWRin
VSWRout
IP3
P1dB
Id
Operating frequency range
Gain (1)
Gain flatness (1)
Noise figure (1)
Input VSWR (1)
Ouput VSWR (1)
3rd order intercept point
Output power at 1dB gain
compression
Drain bias current (2)
10
14
16
±
0.5
2.0
16
Ghz
dB
±
1.0
2.5
3.0:1
3.0:1
dB
dB
20
10
45
dBm
dBm
mA
(1) These values are representative of on-wafer measurements that are made without bonding wires at
the RF ports. When the chip is attached with typical 0.3nH input and output bonding wires, the indicated
parameter values should be improved.
(2) This current is the typical value from the low noise low consumption biasing ( B & D grounded ).
Absolute Maximum Ratings
(1)
Tamb = +25°C
Symbol
Vd
Pin
Top
Tstg
Parameter (1)
Drain bias voltage (3)
Maximum peak input power overdrive (2)
Operating temperature range
Storage temperature range
Values
4.5
+15
-40 to +85
-55 to +125
Unit
V
dBm
°C
°C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
(2) Duration < 1s.
(3) For a typical biasing circuit :
B & D grounded
. See chip biasing option page 7/8.
Ref. : DSCHA20664281 - 07 Oct 04
2/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
10-16GHz Low Noise Amplifier
Typical Results
Chip Typical Response ( On wafer Sij ) :
CHA2066
Tamb = +25°C
Vd = 4.0V ; Vg1 = Vg2 = +1.4Volt ; Id = 45mA ( A,B,C,D & E not connected )
Freq
GHz
1.00
2.00
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
19.00
20.00
21.00
22.00
23.00
24.00
25.00
26.00
MS11
dB
-0.25
-0.54
-0.88
-1.38
-2.32
-4.51
-8.90
-12.32
-10.70
-8.32
-7.00
-6.48
-6.63
-7.33
-8.51
-9.93
-11.00
-11.11
-10.35
-9.53
-8.97
-9.04
-9.70
-10.97
-12.61
-14.42
PS11
°
-16.1
-31.8
-48.8
-68.9
-95.1
-131.2
-177.3
122.2
61.8
24.9
-1.8
-23.4
-42.1
-58.2
-71.5
-79.7
-82.6
-83.8
-88.5
-100.1
-117.1
-137.0
-161.0
174.2
144.5
110.6
MS12
dB
-82.22
-83.38
-84.02
-72.90
-62.06
-52.22
-45.23
-41.37
-39.16
-37.57
-36.41
-35.43
-34.71
-34.27
-34.16
-34.42
-35.18
-36.29
-37.52
-38.26
-37.98
-36.56
-35.28
-34.49
-34.15
-34.37
PS12
°
90.1
37.9
17.8
21.7
8.4
-25.9
-71.4
-112.2
-144.4
-170.5
168.3
149.3
131.5
114.2
98.4
83.4
70.8
61.5
58.2
59.5
64.4
64.7
56.8
47.1
36.2
24.8
MS21
dB
-46.86
-46.99
-30.57
-12.70
-1.44
7.98
13.83
16.32
17.19
17.48
17.54
17.55
17.53
17.44
17.23
16.85
16.29
15.59
14.75
13.82
12.71
11.36
9.72
7.77
5.59
3.10
PS21
°
-148.0
-169.6
-13.6
-58.0
-96.2
-145.4
154.7
100.4
56.4
20.2
-10.5
-38.0
-63.6
-88.2
-112.3
-135.9
-158.6
179.4
158.2
137.2
115.9
95.5
75.4
56.6
39.2
23.8
MS22
dB
-0.07
-0.15
-0.67
-1.41
-1.47
-2.17
-3.17
-4.01
-4.90
-5.99
-7.27
-8.87
-10.85
-12.73
-13.16
-11.71
-9.84
-8.29
-7.17
-6.34
-5.86
-5.47
-5.35
-5.37
-5.41
-5.70
PS22
°
-7.1
-14.8
-24.3
-26.7
-33.3
-41.3
-46.2
-50.1
-53.3
-56.8
-59.4
-60.5
-57.5
-46.1
-27.4
-13.0
-8.5
-9.4
-13.1
-18.1
-23.7
-29.3
-34.7
-39.3
-43.4
-46.2
Ref. : DSCHA20664281 - 07 Oct 04
3/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2066
Typical Results
Chip Typical Response ( On wafer Sij ) :
10-16GHz Low Noise Amplifier
Tamb = +25°C
Vd = 4.0V ; Vg1 = Vg2 = +1.4Volt ; Id = 45mA ( A,B,C,D & E not connected )
20
15
10
Gain, RLoss ( dB )
5
Gain
dBS22
dBS11
0
-5
-10
-15
-20
2
4
6
8
10
12
14
16
18
20
22
24
26
Frequency ( GHz )
Typical Gain and Matching measurements on wafer.
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
10
11
12
13
Gain, NF ( dB )
GAIN
NF
Gab
14
15
16
17
18
19
20
Frequency ( GHz )
Typical Gain and Noise Figure measurements on wafer.
Ref. : DSCHA20664281 - 07 Oct 04
4/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
10-16GHz Low Noise Amplifier
Typical Test-Jig Results
CHA2066
Circuit Typical Response ( Test-Jig ) :
Tamb = +25°C
20
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
5
6
7
8
Vd = 4.0V ; B & E Pads grounded ; Id = 55mA ( Vg1 & Vg2 NC )
Gain & NF & RLoss ( dB )
dBS11
dBS21
dBS22
Gab
Nf_C
9
10
11
12
13
14
15
16
17
18
19
20
Frequency ( GHz )
Typical Linear measurements in test-jig.
20
18
16
14
12
10
8
6
4
2
0
-2
-16 -14 -12 -10 -8 -6 -4
Pin ( dBm ) at 12GHz
20
18
16
14
12
10
8
6
4
2
0
-2
0
-16 -14 -12 -10 -8 -6 -4
Pin ( dBm ) at 16GHz
Pout
Gain
Pout
Gain
-2
-2
0
Typical Output Power measurements in test-jig.
Ref. : DSCHA20664281 - 07 Oct 04
5/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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