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5962-R1020602VXC

产品描述2MX39 MULTI DEVICE SRAM MODULE, 22ns, CQFP132, 0.900 INCH, CERAMIC, SIDE BRAZED, QFP-132
产品类别存储    存储   
文件大小188KB,共24页
制造商Cobham Semiconductor Solutions
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5962-R1020602VXC概述

2MX39 MULTI DEVICE SRAM MODULE, 22ns, CQFP132, 0.900 INCH, CERAMIC, SIDE BRAZED, QFP-132

5962-R1020602VXC规格参数

参数名称属性值
零件包装代码QFP
包装说明GQFP,
针数132
Reach Compliance Codeunknown
ECCN代码3A001.A.2.C
最长访问时间22 ns
JESD-30 代码S-CQFP-G132
JESD-609代码e4
长度22.86 mm
内存密度81788928 bit
内存集成电路类型SRAM MODULE
内存宽度39
功能数量1
端子数量132
字数2097152 words
字数代码2000000
工作模式ASYNCHRONOUS
最高工作温度105 °C
最低工作温度-55 °C
组织2MX39
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装代码GQFP
封装形状SQUARE
封装形式FLATPACK, GUARD RING
并行/串行PARALLEL
认证状态Not Qualified
筛选级别MIL-PRF-38535 Class V
座面最大高度7.87 mm
最大供电电压 (Vsup)2 V
最小供电电压 (Vsup)1.7 V
标称供电电压 (Vsup)1.9 V
表面贴装YES
技术CMOS
温度等级OTHER
端子面层GOLD
端子形式GULL WING
端子节距0.635 mm
端子位置QUAD
总剂量100k Rad(Si) V
宽度22.86 mm
Base Number Matches1

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Standard Products
UT8R1M39 40Megabit SRAM MCM
UT8R2M39 80Megabit SRAM MCM
UT8R4M39 160Megabit SRAM MCM
Preliminary Data Sheet
June 8, 2011
www.aeroflex.com/memories
FEATURES
20ns Read, 10ns Write maximum access times available
Functionally compatible with traditional 1M, 2M, or 4M x
39 SRAM devices
CMOS compatible input and output levels, three-state
bidirectional data bus
- I/O Voltages 2.3V to 3.6V, 1.7V to 2.0V core
Available densities:
- UT8R1M39: 40, 894, 464 bits
- UT8R2M39: 81, 788, 928 bits
- UT8R4M39: 163, 577, 856 bits
Operational Environment:
- Total-dose: 100 krad(Si)
- SEL Immune: 111MeV-cm
2
/mg
- SEU error rate = 6.3x10
-7
errors/bit-day assuming
geosynchronous orbit, Adam’s 90% worst environment.
Packaging options:
- 132-lead side-brazed dual cavity ceramic quad flatpack
Standard Microelectronics Drawing:
- UT8R1M39: 5962-10205
- QML Q, Q+ and V compliant part
- UT8R2M39: 5962-10206
- QML Q, Q+ and V pending
- UT8R4M39: 5962-10207
- QML Q, Q+ and V pending
INTRODUCTION
The UT8R1M39, UT8R2M39, and UT8R4M39 are high
performance CMOS static RAM multichip modules (MCMs)
organized as two, four, or eight individual 524,288 words x 39
bits dice respectively. Easy memory expansion is provided by
active LOW chip enables (En), an active LOW output enable
(G), and three-state drivers. This device has a power-down
feature that reduces power consumption by more than 90% when
deselected.
Writing to the device is accomplished by driving one of the chip
enable (En) inputs LOW and the write enable (W) input LOW.
Data on the 39 I/O pins (DQ0 through DQ38) is then written into
the location specified on the address pins (A0 through A18).
Reading from the device is accomplished by driving one of the
chip enables (En) and output enable (G) LOW while driving
write enable (W) HIGH. Under these conditions, the contents of
the memory location specified by the address pins will appear
on the I/O pins.
Note:
Only one En pin may be active at any time.
The 39 input/output pins (DQ0 through DQ38) are placed in a
high impedance state when the device is deselected (En HIGH),
the outputs are disabled (G HIGH), or during a write operation
(En LOW, W LOW).
Figure 1. Block Diagram
1

 
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