STSA851
Low voltage fast-switching NPN power transistor
Features
■
■
■
Very low collector to emitter saturation voltage
High current gain characteristic
Fast-switching speed
Applications
■
■
■
■
Emergency lighting
Voltage regulators
Relay drivers
High efficiency low voltage switching
applications
TO-92
Description
The device is manufactured in NPN planar
technology by using a "base island" layout. the
resulting transistor shows exceptional high gain
performance coupled with very low saturation
voltage.
Figure 1.
bs
O
et
l
o
ro
P
e
uc
d
s)
t(
O
-
so
b
te
le
ro
P
uc
d
s)
t(
TO-92AP
Internal schematic diagram
Table 1.
Device summary
Marking
SA851
SA851
Package
TO-92
TO-92AP
Packaging
Bulk
Ammopack
Order code
STSA851
STSA851-AP
March 2008
Rev 3
1/11
www.st.com
11
STSA851
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
2.2
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
bs
O
et
l
o
ro
P
e
uc
d
s)
t(
O
-
so
b
te
le
ro
P
uc
d
s)
t(
2/11
STSA851
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
J
Absolute maximum rating
Parameter
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
Collector peak current (t
P
< 5 ms)
Base current
Total dissipation at T
amb
= 25 °C
Storage temperature
Max. operating junction temperature
Value
150
60
7
5
20
1
Unit
V
V
V
Table 3.
Symbol
R
thj-amb
Thermal data
Thermal resistance junction-ambient
bs
O
et
l
o
ro
P
e
uc
d
s)
t(
O
-
Parameter
so
b
te
le
__
r
P
d
o
1.1
uc
s)
t(
A
A
A
W
°C
°C
-65 to 150
150
Value
max
114
Unit
°C/W
3/11
Electrical characteristics
STSA851
2
Electrical characteristics
(T
case
= 25 °C unless otherwise specified)
Table 4.
Symbol
I
CBO
Electrical characteristics
Parameter
Collector cut-off current
(I
E
= 0)
Emitter cut-off current
(I
C
= 0)
Test conditions
V
CB
= 120 V
V
CB
= 120 V
V
EB
= 7 V
T
C
= 100 °C
Min.
Typ.
Max.
50
1
10
Unit
nA
µA
nA
I
EBO
Collector-base
(1)
breakdown Voltage
V
(BR)CBO
(I
E
= 0)
Collector-emitter
(1)
breakdown Voltage
V
(BR)CEO
(I
B
= 0)
I
C
= 100 µA
150
I
C
= 10 mA
Emitter-base breakdown
I
E
= 100 µA
V
(BR)EBO (1)
Voltage
(I
C
= 0)
V
CE(sat) (1)
Collector-emitter
saturation voltage
V
BE(sat) (1)
b
O
et
l
so
ro
P
e
h
FE
f
T
C
CBO
Base-emitter saturation
voltage
uc
d
)-
(s
t
I
C
= 100 mA
I
C
= 1 A
I
C
= 2 A
I
C
= 5 A
b
O
so
_
_
_
te
le
r
P
60
7
d
o
uc
s)
t(
V
V
V
I
B
= 5 mA
I
B
= 50 mA
I
B
= 50 mA
I
B
= 200 mA
I
B
= 200 mA
V
CE
= 1 V
V
CE
= 1 V
V
CE
= 1 V
V
CE
= 1 V
I
C
= 100 mA
f = 1 MHz
150
150
90
30
10
70
140
320
1
300
270
140
50
130
45
50
120
200
450
1.15
mV
mV
mV
mV
V
I
C
= 4 A
I
C
= 10 mA
I
C
= 2 A
I
C
= 5 A
I
C
= 10 A
DC current gain
350
Transition frequency
Collector-base
capacitance
Resistive load
Turn-on time
Storage time
Fall time
V
CE
= 10 V
V
CB
= 10 V
MHz
pF
t
on
t
s
t
f
I
C
= 1 A
V
CC
= 10 V
55
1.35
120
ns
µs
ns
I
B1
= -I
B2
= 0.1 A
1. Pulsed duration = 300 µs, duty cycle
≥
1.5%.
4/11
STSA851
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 2.
Output characteristics
Figure 3.
DC current gain
Figure 4.
Collector-emitter saturation
voltage
Figure 5.
Figure 6.
bs
O
et
l
o
ro
P
e
uc
d
s)
t(
O
-
so
b
te
le
Collector-emitter saturation
voltage
ro
P
uc
d
s)
t(
Base-emitter saturation
voltage
Figure 7.
Base-emitter on voltage
5/11
stm32/stm8
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