PRELIMINARY
RT3U33M
Composite Transistor
For high speed switching
Silicon N-channel + P-channel MOSFET
DESCRIPTION
RT3U33M
is
a
composite
transistor
built
with
OUTLINE DRAWING
2.1
1.25
①
0.65
②
③
⑥
⑤
④
0.2
Unit：mm
INK0003AX and INJ0003AX chips in SC-88 package.
FEATURE
・Input impedance is high, and not necessary to consider a drive
electric current.
・Vth is low, and drive by low voltage is possible. Vth=0.6½1.2V
・Low on Resistance. Ron= 0.9 / 2Ω(Tr1/Tr2) TYP
・High speed switching.
・Small package for easy mounting.
2.0
APPLICATION
high speed switching , Analog switching
*P-channel MOSFET Tr2’s minus sign is omitted
0½0.1
0.65
0.13
⑤
Tr.1
0.9
0.65
⑥
④
Tr.2
TERMINAL
CONNECTOR
①：SOURCE1
②：GATE1
③：DRAIN2
④：SOURCE2
⑤：GATE2
⑥:DRAIN1
JEITA：SC-88
①
②
③
MAXIMUM RATING (Ta=25℃)
SYMBOL
V
DSS
V
GSS
I
D
P
D
T
ch
T
stg
PARAMETER
RATING
20
UNIT
V
V
mA
mW
℃
℃
6
5
4
MARKING
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation（Ta=25℃）
Channel temperature
Range of Storage temperature
±8
200
150
＋125
-55½＋125
.
.
Ｕ３ ３
１
2
3
ISAHAYA ELECTRONICS CORPORATION
PRELIMINARY
RT3U33M
Composite Transistor
For high speed switching
Silicon N-channel + P-channel MOSFET
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
th
Parameter
Test conditions
Limits
Min
Typ
Max
Unit
Drain-source breakdown voltage
Gate-source leak current
Zero gate voltage drain current
Gate threshold voltage
Forward transfer admittance
Static drain-source on-state resistance
Input capacitance
Output capacitance
I
D
=100μA, V
GS
=0V
V
V
GS
DS
20
-
-
GS
-
-
-
-
300
280
0.9
2.0
34
37
8.5
12
14
16
85
110
-
±0.5
50
1.2
-
-
-
-
-
-
-
-
-
-
-
-
V
μA
μA
V
mS
Ω
pF
pF
=±5V, V
DS
=0V
=V
=20V ,V
GS
=0V
DS
I
D
=250μA, V
V
DS
0.6
Tr1
Tr2
Tr1
Tr2
Tr1
Tr2
Tr1
Tr2
Tr1
Tr2
Tr1
Tr2
-
-
-
-
-
-
-
-
-
-
-
-
|
Y
fs
|
R
DS(ON)
C
iss
C
oss
t
ON
t
OFF
=10V, I
D
=0.1A
GS
I
D
=100mA, V
V
V
DS
=4.0V
=10V, V
=10V, V
GS
=0V,f=1MHz
=0V,f=1MHz
DS
GS
Switching time
V
V
=5V , I
D
=10mA
GS
=0½5V
DD
ns
Switching time test condition ( Tr.1 )
test circuit
5V
IN
OUT
5V
90%
R
L
0
10μs
V
DD
=5V
D.U.≦1%
Common source
Ta=25℃
50Ω
V
DD
input
waveform
0V
V
DD
10%
10%
output
waveform
V
DS(ON）
ton
90%
tr
toff
tf
Switching time test condition ( Tr.2 )
test circuit
0
IN
OUT
0V
R
L
-5V
10μs
V
DD
=-5V
D.U.≦1%
Common source
Ta=25℃
50Ω
V
DD
input
waveform
-5V
V
DS(ON）
10%
90%
output
waveform
V
DD
ton
90%
10%
tr
toff
tf
ISAHAYA ELECTRONICS CORPORATION
TYPICAL CHARACTERISTICS ( Tr.1 )
Ta=25℃
100
1.6V
1.5V
1.4V
ID -VDS
Ta=25℃
1
1.0V
ID -VDS(Low voltage region)
80
Drain current ID (mA)
Drain current ID (mA)
0.8
60
1.3V
0.6
0.95V
40
1.2V
0.4
0.9V
20
1.1V
VGS=1.0V
0.2
0.85V
VGS=0.8V
0
0
2
4
6
Drain-Source voltage VDS (V)
0
10
0
0.1
0.2
0.3
Drain-Source voltage VDS (V)
8
0.4
0.5
IDR -VDS
100
Drain reverse current IDR (mA)
Ta=25℃
VGS=0V
Drain current ID (mA)
100
1000
Ta=25℃
VDS=10V
ID -VGS
10
10
1
-0
-0.5
-1
-1.5
-2
Drain-Source voltage VDS (V)
1
0
1
2
3
4
5
Gate-Source voltage VGS (V)
|Yfs| - ID
1000
Forward transfer admittance
|Yfs| (mS)
Ta=25℃
VDS=10V
Drain-Source ON voltage
VDS(ON) (mV)
100
100
1000
Ta=25℃
VGS=4V
VDS(ON) -ID
10
10
1
1
1
10
100
1000
Drain current ID (mA)
0.1
1
10
Drain current ID (mA)
100
t - ID
10000
Ta=25℃
toff
Switching time t (ns)
Capacitance C (pF)
1000
100
C - VDS
Ciss
t½
100
10
Coss
10
ton
tr
Ta=25℃
VGS=0V
1
0.1
1
10
100
1
0.1
1
10
100
Drain current ID (mA)
Drain-Source voltage VDS (V)
ISAHAYA ELECTRONICS CORPORATION
TYPICAL CHARACTERISTICS ( Tr.2 )
Ta=25℃
-100
-1.6V
-1.5V
-80
Drain current ID (mA)
ID -VDS
-1.4V
-1.3V
Drain current ID (mA)
-5
-1.0V
-4
-0.9V
-3
-0.85V
VGS=-0.8V
-0.95V
Ta=25℃
ID -VDS(Low voltage region)
-60
-1.2V
-40
-1.1V
VGS=-1.0V
-2
-20
-1
-0
-0
-2
-4
-6
-8
-10
Drain-Source voltage VDS (V)
-0
-0
-0.1
-0.2
-0.3
-0.4
-0.5
Drain-Source voltage VDS (V)
IDR -VDS
-100
Drain reverse current IDR (mA)
Ta=25℃
VGS=0V
Drain current ID (mA)
-100
-1000
Ta=25℃
VDS=-10V
ID -VGS
-10
-10
-1
0
0.5
1
1.5
2
Drain-Source voltage VDS (V)
-1
-0
-1
-2
-3
-4
-5
Gate-Source voltage VGS (V)
|Yfs| - ID
1000
Forward transfer admittance
|Yfs| (mS)
Ta=25℃
VDS=-10V
100
-1000
Ta=25℃
VGS=-4V
Drain-Source ON voltage
VDS(ON) (mV)
VDS(ON) -ID
-100
10
-10
1
-1
-10
-100
-1000
Drain current ID (mA)
-1
-1
-10
Drain current ID (mA)
-100
t - ID
10000
Ta=25℃
toff
Switching time t (ns)
1000
tf
Capacitance C (pF)
100
C - VDS
Ciss
100
10
Coss
ton
10
tr
Ta=25℃
VGS=0V
1
-0.1
1
-0.1
-1
-10
Drain current ID (mA)
-100
-1
-10
Drain-Source voltage VDS (V)
-100
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs!
·
ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
Notes regarding these materials
·
These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the
customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging
ISAHAYA or third party.
·
ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights ,
originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials.
·
All information contained in these materials, including product data, diagrams and charts, represent information on products
at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice
due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics
Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed
herein.
·
ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used
under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an
authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes ,
such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
·
The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these
materials.
·
If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a
license from the Japanese government and cannot be imported into a country other than the approved destination. Any
diversion or re-export contrary to t e export control laws and regulations of Japan and/or the country of destination is
h
prohibited.
·
Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these
materials or the products contained therein.
Apr.2007
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