PRELIMINARY
RT3WLMM
Composite Transistor
For Low Frequency Amplify Application
Silicon Epitaxial Type
DESCRIPTION
RT3WLMM is a composite transistor built with
2SC3052 chip and 2SA1235A chip in SC-88 package.
OUTLINE DRAWING
2.1
1.25
①
0.65
②
③
⑥
⑤
④
0.2
Unit：mm
FEATURE
Silicon epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
2.0
APPLICATION
For low frequency amplify application
0.65
0.65
0½0.1
Tr1
Tr2
TERMINAL
CONNECTOR
①：EMITTER1
②：BASE1
③：COLLECTOR2
④：EMITTER2
⑤：BASE2
⑥：COLLECTOR1
JEITA：SC-88
MAXIMUM RATING (Ta=25℃)
SYMBOL
V
CBO
V
EBO
V
CEO
I
C
P
C
（Total）
T
j
T
stg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector dissipation（Ta=25℃）
Junction temperature
Storage temperature
RATING
Tr1
50
6
50
200
150
＋125
-55½＋125
Tr2
60
UNIT
V
V
V
mA
mW
℃
℃
MARKING
6
5
4
.
１
WL M
2
3
ISAHAYA ELECTRONICS CORPORATION
0.13
0.9
PRELIMINARY
RT3WLMM
Composite Transistor
For Low Frequency Amplify Application
Silicon Epitaxial Type
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Symbol
V
(BR)CEO
I
CBO
I
EBO
h
FE
*
h
FE
V
CE(sat)
f
T
C
ob
NF
Parameter
Collector to Emitter break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
Collector to Emitter saturation voltage
Gain band width product
Collector output capacitance
Noise figure
Test conditions
I
C
=100μA,R
BE
=∞
V
CB
=50V,I
E
=0
V
EB
=6V,I
C
=0
V
CE
=6V,I
C
=1mA
V
CE
=6V,I
C
=0.1mA
I
C
=100mA,I
B
=10mA
V
CE
=6V,I
E
=-10mA
(Tr1) V
CB
=6V,I
E
=0,f=1MH
Z
(Tr2) V
CB
=-6V,I
E
=0,f=1MH
Z
(Tr1) V
CE
=6V,I
E
=-0.1mA,f=1kH
Z
,R
G
=2kΩ
(Tr2) V
CE
=-6V,I
E
=0.3mA,f=100H
Z
,R
G
=10kΩ
Limits
Min
50
-
-
150
90
-
-
Typ
-
-
-
-
-
-
200
2.5
4.0
-
-
E
150½300
Max
-
0.1
0.1
500
-
0.3
-
Unit
V
μA
μA
-
-
V
MH
Z
pF
-
-
Item
hFE
15
20
F
dB
* : It shows h
FE
classification in right table.
250½500
ISAHAYA ELECTRONICS CORPORATION
PRELIMINARY
RT3WLMM
Composite Transistor
For Low Frequency Amplify Application
Silicon Epitaxial Type
TYPICAL CHARACTERISTICS
（Tr1）
COMMON EMITTER OUTPUT
50
0.16mA
50
0.14mA
0.12mA
0.10mA
30
0.08mA
0.06mA
0.04mA
10
0.02mA
IB=0
0
0
1
2
3
4
5
COLLECTOR EMITTER VOLTAGE VCE(V)
Ta=25℃
COLLECTOR CURRENT IC(mA)
40
Ta=25℃
VCE=6V
COMMON EMITTER TRANSFER
COLLECTOR CURRENT IC(mA)
40
30
20
20
10
0
0
0.2
0.4
0.6
0.8
BASE TO EMITTER VOLTAGE VBE(V)
1
DC FORWARD CURRENT GAIN
VS. COLLECTOR CURRENT
10000
RELATIVE VALUE OF DC FORWARD
CURRENT GAIN hFE
GAIN BAND WIDTH PRODUCT fT(MHz)
250
GAIN BAND WIDTH PRODUCT
VS. EMITTER CURRENT
Ta=25℃
VCE=6V
200
Ta=25℃
VCE=6V
100(@IC=1mA)
1000
150
100
100
10
50
1
0.1
1
10
100
1000
COLLECTOR CURRENT IC(mA)
COLLECTOR OUTPUT CAPACITANCE
VS. COLLECTOR TO BASE VOLTAGE
100
COLLECTOR OUTPUT CAPACITANCE
Cob(pF)
Ta=25℃
IE=0
f=1MHz
10
0
-0.1
-1
-10
EMITTER CURRENT IE(mA)
-100
1
0.1
0.1
1
10
100
COLLECTOR TO BASE VOLTAGE VCB(V)
ISAHAYA ELECTRONICS CORPORATION
PRELIMINARY
RT3WLMM
Composite Transistor
For Low Frequency Amplify Application
Silicon Epitaxial Type
TYPICAL CHARACTERISTICS
（Tr2）
COMMON EMITTER OUTPUT
-50
-50
COMMON EMITTER TRANSFER
0.18mA
0.16mA
Ta=25℃
0.14mA
0.12mA
COLLECTOR CURRENT IC(mA)
Ta=25℃
VCE=-6V
-40
-40
COLLECTOR CURRENT IC(mA)
-30
0.10mA
0.08mA
-30
-20
0.06mA
0.04mA
-20
-10
0.02mA
IB=0
-10
-0
-0
-1
-2
-3
-4
-5
COLLECTOR EMITTER VOLTAGE VCE(V)
-0
-0.0
-0.2
-0.4
-0.6
-0.8
BASE TO EMITTER VOLTAGE VBE(V)
-1.0
DC FORWARD CURRENT GAIN
VS. COLLECTOR CURRENT
10000
RELATIVE VALUE OF DC FORWARD CURRENT
GAIN hFE
Ta=25℃
VCE=-6V
100(@IC=-1mA)
1000
250
Ta=25℃
VCE=-6V
200
GAIN BAND WIDTH PRODUCT
VS. EMITTER CURRENT
GAIN BAND WIDTH PRODUCT fT(MHz)
150
100
100
10
50
1
-0.1
0
-1
-10
-100
COLLECTOR CURRENT IC(mA)
COLLECTOR OUTPUT CAPACITANCE
VS. COLLECTOR TO BASE VOLTAGE
-1000
0.1
1
10
EMITTER CURRENT IE(mA)
100
100
COLLECTOR OUTPUT CAPACITANCE Cob(pF)
Ta=25℃
IE=0
f=1MHz
10
1
0.1
-0.1
-1
-10
COLLECTOR TO BASE VOLTAGE VCB(V)
-100
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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·
ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
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·
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customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging
ISAHAYA or third party.
·
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originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials.
·
All information contained in these materials, including product data, diagrams and charts, represent information on products
at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice
due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics
Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed
herein.
·
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under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an
authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes ,
such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
·
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materials.
·
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diversion or re-export contrary to t e export control laws and regulations of Japan and/or the country of destination is
h
prohibited.
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Jan.2003
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