RT3T1CU
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
DESCRIPTION
RT3T1CU
is
a
composite
transistor
built
with
RT1N141 chip and RT1P136 chip in USM6F package.
OUTLINE DRAWING
1.6
±0.05
1pin ﾏ½½
1.2
±0.05
Unit：mm
FEATURE
Silicon epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
1.6
±0.05
1. 0
0.5
0.5
(0.5)
6
1
(0.95)
2
(0.5)
5
0.2
±0.05
APPLICATION
Inverted circuit, switching circuit,
interface circuit, driver circuit
3
(Φ0.1
½0.2)
4
0.5
±0.05
0.12
±0.05
※PNP
built in transistor of ”－”sign is abbreviation.
⑥
RTr1
⑤
R1
R2
R2
R1
②
④
RTr2
TERMINAL
CONNECTOR
①：EMITTER1
②：BASE1
③：COLLECTOR2
④：EMITTER2
⑤：BASE2
⑥:COLLECTOR1
JEITA：－
ISAHAYA：USM6F
①
③
MAXIMUM RATING (Ta=25℃)
SYMBOL
V
CBO
V
EBO
V
CEO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation（Total, Ta=25℃）
Junction temperature
Storage temperature
Tr1
Tr2
RATING
50
10
6
50
100
200
125
＋150
-55½＋150
UNIT
V
V
V
V
mA
mA
mW
℃
℃
１
2
3
6
5
4
MARKING
1C
ISAHAYA ELECTRONICS CORPORATION
RT3T1CU
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Symbol
V
(BR)CEO
I
CBO
h
FE
V
CE(sat)
V
I(ON)
V
I(OFF)
R
1
R
2
/R
1
f
T
Parameter
Collector to Emitter break down voltage
Collector cut off current
DC forward current gain
Collector to Emitter saturation voltage
Input on voltage
Input off voltage
Input resistor
Resistor ratio
Gain band width product
Test conditions
I
C
=100µA，R
BE
=∞
V
CB
=50V，I
E
=0mA
Tr1
Tr2
Tr1
Tr2
Tr1
Tr2
Tr1
Tr2
Tr1
Tr2
Tr1
Tr2
Tr1
Tr2
V
CE
=5V，I C=10mA
V
CE
=5V，I C=5mA
I
C
=10mA,I
B
=0. 5mA
V
CE
=0.2V，I
C
=5mA
V
CE
=5V，I
C
=100µA
0.8
0.4
7.0
0.7
0.9
8
50
33
0.1
1.5
0.7
1.1
0.6
10
1.0
1.0
10
200
150
0.3
0.3
3.0
1.2
Limits
Min
50
0.1
Typ
Max
Unit
V
µA
-
V
V
V
13
1.3
1.1
12
KΩ
-
MH
Z
V
CE
=6V，I
E
=10mA
TYPICAL CHARACTERISTICS
100
VCE=0.2V
(Tr1)
1000
DC FORWARD CURRENT GAIN hFE
DC FORWARD CURRENT GAIN
VS. COLLECTOR CURRENT
VCE=5V
INPUT ON VOLTAGE
VS. COLLECTOR CURRENT
INPUT ON VOLTAGE VI(ON)(V)
10
100
1
1
10
COLLECTOR CURRENT IC(mA)
COLLECTOR CURRENT
VS. INPUT OFF VOLTAGE
1000
VCE=5V
COLLECTOR CURRENT IC(mA)
10
100
1
10
COLLECTOR CURRENT IC(mA)
100
100
10
0.0
0.4
0.8
1.2
1.6
2.0
INPUT OFF VOLTAGE VI(OFF)(V)
ISAHAYA ELECTRONICS CORPORATION
PRELIMINARY
RT3T1CU
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
TYPICAL CHARACTERISTICS
( Tr2 )
IN P U T ON V OL TA GE
V S. C OL L EC TOR C U R R E N T
D C F OR W A R D C U R R E N T GA IN
V S. C OL L E C TOR C U R R E N T
INPUT ON VOLTEGE ＶI(ON)（Ｖ）
V
CE
=-0.2V
DC FORWARD CURRENT GAIN ½ＦＥ
-10
1000
V
CE
=-5V
-1
100
-0.1
-1
-10
-100
COLLECTOR CURRENT Ｉ
Ｃ
（½Ａ）
C OL L E C TOR C U R R E N T
V S. IN P U T OF F V OL TA G E
10
-1
-10
-100
COLLECTOR CURRENT Ｉ
Ｃ
（½Ａ）
COLLECTOR CURRENT IC（μＡ）
-1000
V
CE
=-5V
-100
-10
0
-0.4
-0.8
-1.2
-1.6
INPUT OFF VOLTAGE Ｖ
Ｉ（ＯＦＦ）
（Ｖ）
-2
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs!
·
ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
Notes regarding these materials
·
These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the
customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging
ISAHAYA or third party.
·
ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights ,
originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials.
·
All information contained in these materials, including product data, diagrams and charts, represent information on products
at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice
due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics
Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed
herein.
·
ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used
under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an
authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes ,
such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
·
The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these
materials.
·
If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a
license from the Japanese government and cannot be imported into a country other than the approved destination. Any
diversion or re-export contrary to t e export control laws and regulations of Japan and/or the country of destination is
h
prohibited.
·
Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these
materials or the products contained therein.
Jan.2003
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