PRELIMINARY
RT3TSSM
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
DESCRIPTION
RT3TSSM
is
a
composite
transistor
built
with
RT1N150 chip and RT1P150 chip in SC-88 package.
OUTLINE DRAWING
2.1
1.25
①
0.65
②
③
⑥
⑤
④
0.2
Unit：mm
FEATURE
Silicon epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
2.0
APPLICATION
Inverted circuit, switching circuit,
interface circuit, driver circuit
0.65
0.13
0½0.1
⑥
RTr1
⑤
R1
RTr2
R1
②
④
TERMINAL
CONNECTOR
①：EMITTER1
②：BASE1
③：COLLECTOR2
④：EMITTER2
⑤：BASE2
⑥:COLLECTOR1
JEITA：SC-88
※PNP
built in transistor of ”－”sign is abbreviation.
0.9
①
0.65
③
MAXIMUM RATING (Ta=25℃)
SYMBOL
V
CBO
V
EBO
V
CEO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation（Total, Ta=25℃）
Junction temperature
Storage temperature
RATING
50
6
50
100
200
150
＋150
-55½＋150
UNIT
V
V
V
mA
mA
mW
℃
℃
6
5
4
MARKING
.
１
TSS
2
3
ISAHAYA ELECTRONICS CORPORATION
PRELIMINARY
RT3TSSM
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Symbol
V
(BR)CEO
I
CBO
h
FE
V
CE(sat)
R
1
f
T
Parameter
Collector to Emitter break down voltage
Collector cut off current
DC forward current gain
Collector to Emitter saturation voltage
Input resistor
Gain band width product
Test conditions
I
C
=100μA,R
BE
=∞
V
CB
=50V,I
E
=0
V
CE
=5V,I
C
=1mA
I
C
=1mA,I
B
=0.1mA
-
V
CE
=6V,I
E
=10mA
Tr1
Tr2
Limits
Min
50
-
100
-
-
-
-
Typ
-
-
-
0.1
100
200
150
Max
-
0.1
-
0.3
-
-
-
Unit
V
μA
-
V
kΩ
MH
Z
TYPICAL CHARACTERISTICS （Tr1）
INPUT ON VOLTAGE
VS.COLLECTOR CURRENT
DC FORWARD CURRENT GAIN
VS.COLLECTOR CURRENT
INPUT ON VOLTEGE I(ON)（ ）
Ｖ
Ｖ
10
V
CE
=0.2V
1000
DC FORWARD CURRENT GAIN hFE
V
CE
=5V
1
100
0.1
1
10
COLLECTOR CURRENT Ｉ
Ｃ
（½
Ａ）
COLLECTOR CURRENT
VS.INPUT OFF VOLTAGE
10
1
10
COLLECTOR CURRENT Ｉ
Ｃ
（½
Ａ）
100
100
IC（ A）
μ
COLLECTOR CURRENT
1000
V
CE
=5V
100
10
0
0.4
0.8
1.2
1.6
INPUT OFF VOLTAG
E Ｖ
Ｉ（ＯＦＦ）
（Ｖ）
2
ISAHAYA ELECTRONICS CORPORATION
PRELIMINARY
RT3TSSM
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
TYPICAL CHARACTERISTICS （Tr2）
DC forward current gain-Collector current
1000
VCE=-5V
Collector current-Input off voltage
-1000
VCE=-5V
DC forward current gain hFE
100
Collector current IC[uA]
-1
-10
Collector current IC[mA]
-100
-100
10
-10
-0
-0.5
-1
-1.5
-2
Input off voltage VI(OFF)[V]
Input on voltage-Collector current
-10
VCE=-200mV
Input on voltage VI(ON)[V]
-1
-0.1
-0.1
-1
-10
-100
Collector current IC[mA]
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs!
·
ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
Notes regarding these materials
·
These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the
customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging
ISAHAYA or third party.
·
ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights ,
originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials.
·
All information contained in these materials, including product data, diagrams and charts, represent information on products
at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice
due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics
Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed
herein.
·
ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used
under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an
authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes ,
such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
·
The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these
materials.
·
If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a
license from the Japanese government and cannot be imported into a country other than the approved destination. Any
diversion or re-export contrary to t e export control laws and regulations of Japan and/or the country of destination is
h
prohibited.
·
Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these
materials or the products contained therein.
Jan.2003
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