RT3K33M
Composite Transistor
For high speed switching
Silicon N-channel MOSFET
DESCRIPTION
RT3K33M is a composite transistor built with two
INK0003AX
chips in SC-88 package.
OUTLINE DRAWING
2.1
1.25
①
0.65
②
③
⑥
⑤
④
0.2
Unit：mm
FEATURE
・Input impedance is high, and not necessary to consider a drive
electric current.
・Vth is low, and drive by low voltage is possible. Vth=0.6½1.2V
・Low on Resistance. Ron=0.9Ω(TYP)
・High speed switching.
・Small package for easy mounting.
2.0
APPLICATION
high speed switching , Analog switching
0.65
0.13
0½0.1
⑤
Tr.1
0.9
0.65
⑥
④
Tr.2
TERMINAL
CONNECTOR
①：SOURCE1
②：GATE1
③：DRAIN2
④：SOURCE2
⑤：GATE2
⑥:DRAIN1
JEITA：SC-88
①
②
③
MAXIMUM RATING (Ta=25℃)
SYMBOL
V
DSS
V
GSS
I
D
P
D
T
ch
T
stg
PARAMETER
RATING
20
UNIT
V
V
mA
mW
℃
℃
6
5
4
MARKING
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation（Ta=25℃）
Channel temperature
Range of Storage temperature
±8
200
150
＋125
-55½＋125
.
.
Ｋ３ ３
１
2
3
ISAHAYA ELECTRONICS CORPORATION
TYPICAL CHARACTERISTICS
Ta=25℃
100
1.6V
1.5V
1.4V
ID -VDS
Ta=25℃
1
1.0V
ID -VDS(Low voltage region)
80
Drain current ID (mA)
Drain current ID (mA)
0.8
60
1.3V
0.6
0.95V
40
1.2V
0.4
0.9V
20
1.1V
VGS=1.0V
0.2
0.85V
VGS=0.8V
0
0
2
4
6
Drain-Source voltage VDS (V)
0
10
0
0.1
0.2
0.3
Drain-Source voltage VDS (V)
8
0.4
0.5
IDR -VDS
100
Drain reverse current IDR (mA)
Ta=25℃
VGS=0V
Drain current ID (mA)
100
1000
Ta=25℃
VDS=10V
ID -VGS
10
10
1
-0
-0.5
-1
-1.5
-2
Drain-Source voltage VDS (V)
1
0
1
2
3
4
5
Gate-Source voltage VGS (V)
|Yfs| - ID
1000
Forward transfer admittance
|Yfs| (mS)
Ta=25℃
VDS=10V
Drain-Source ON voltage
VDS(ON) (mV)
100
100
1000
Ta=25℃
VGS=4V
VDS(ON) -ID
10
10
1
1
1
10
100
1000
Drain current ID (mA)
0.1
1
10
Drain current ID (mA)
100
t - ID
10000
Ta=25℃
toff
Switching time t (ns)
Capacitance C (pF)
1000
100
C - VDS
Ciss
t½
100
10
Coss
10
ton
tr
Ta=25℃
VGS=0V
1
0.1
1
10
100
1
0.1
1
10
100
Drain current ID (mA)
Drain-Source voltage VDS (V)
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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·
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there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
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·
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·
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originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials.
·
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herein.
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under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an
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Apr.2007
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