MwT-22
2W High Linearity GaAs FET
Preliminary Data Sheet
June 2006
Features:
•
•
•
•
•
•
•
+33 dBm typical Output Power at 6 GHz
12 dB typical Small Signal Gain at 6 GHz
40% typical PAE at 6 GHz
0.5 x 4800 Micron Refractory Metal/Gold Gate
Sorted into 100 mA Idss Bin Ranges
Excellent for High Power, and High Power
Added Efficiency
Ideal for Commercial, Military, Hi-Rel Space
Applications
Chip Dimensions: 1,651 x 508 microns
Chip Thickness: 100 microns
Description:
The MwT-22 is GaAs MESFET device device whose nominal 0.5 micron gate length and 4800 micron gate width make it ideally
suited for applications requiring high power up to 1.5-2watts. The chip is produced using MwT's reliable metal systems and all
devices from each wafer are screened to insure reliability. All chips are passivated using MwT's patented "Diamond-Like Carbon"
process for increased durability.
Electrical Specifications:
SYMBOL
OIP3
PARAMETERS & CONDITIONS
Output IP3 with two tones
Vds=7.5 V Ids=0.6xIDSS=560 mA
Output Power at 1dB Compression
Vds=7.5 V Ids=0.6xIDSS=560 mA
Small Signal Gain
VDS=7.5 V Ids=0.6xIDSS=560 mA
Power Added Efficiency at P1dB
VDS=7.5 V Ids=0.6xIDSS=560 mA
Recommended IDSS Range
•
at Ta= 25
°
C
FREQ
UNITS
dBm
MIN
TYP
48
P1dB
SSG
PAE
IDSS
6 GHz
6 GHz
6 GHz
dBm
dB
%
mA
31.0
9.0
33.0
12
40
800-
1200
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208
WEB
www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2006
MwT-22
2W High Linearity GaAs FET
Preliminary Data Sheet
June 2006
•
at Ta= 25
°
C
UNITS
mA
mS
V
V
V
C/W
-8.0
-12.0
MIN
800
500
650
-1.2
-12.0
-14.0
12
-5.0
TYP
MAX
1200
DC Specifications:
SYMBOL
IDSS
Gm
Vp
BVGSO
BVGDO
Rth
PARAMETERS & CONDITIONS
Saturated Drain Current
Vds=4.0 V Vgs=0.0 V
Transconductance
Vds=2.5 V Vgs=0.0 V
Pinch-off Voltage
Vds=3.0 V Ids=30 mA
Gate-to-Source Breakdown Voltage
Igs= -5.0 mA
Gate-to-Drain Breakdown Voltage
Igd= -5.0 mA
Chip Thermal Resistance
MAXIMUM RATINGS AT Ta = 25
°
C
Symbol
Parameter
Units
Absolute Maximum
VdS
Vgs
Ids
Igs
Pdiss
Pin max
Tch
Tstg
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Gate Current
DC Power Dissipation
RF Input Power
Channel Temperature
Storage Temperature
V
V
mA
mA
W
dBm
°C
°C
9
-6 to +0.8
800
5
6
+28
150
-65 to 150
Note: Operation of this device above any one of these parameters may cause permanent damage.
ORDERING INFORMATION:
When placing order or inquiring, please specify BIN range, wafer number, if known, and visual screening level required. For details of BIN Selection and
Safe Handling Procedure please see supplementary information in available PDF on our website
www.mwtinc.com.
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208
WEB
www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2006
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