MwT-22Q4
High Power, High Linearity Packaged FET
Features
•
•
Ideal for DC-4000 MHz High Power / High Linearity Applications
Excellent RF Performance:
o
33 dBm P1dB
o
47 dBm IP3
o
16 dB SSG @ 2000 MHz
o
40% PAE
MTTF > 100 years @ Channel Temperature 150°C
QFN 4x4 mm Surface Mount Package
•
•
Description
The MwT-22Q4 is a high linearity GaAs MESFET device in low cost QFN package that is ideally suited for high power / high linearity
applications. The applications include 2G, 2.5G, and 3G wireless infrastructure standards, such as GSM, TDMA, cdma, Edge,
cdma2000, WCDMA, TD-SCDMA, and UMTS base stations. This product is also ideal for high data rate wireless LAN infrastructure
applications, such as high QAM rate 802.11 WiFi and 802.16 WiMax base stations and APs (Access Points). In addition, the product
can be used for point-to-point microwave communications links. The third order intercept performance of the MwT-22Q4 is excellent,
typically 14 dB above the 1 dB power gain compression point. The chip is produced using MwT's proprietary high linearity device
design and process with reliable metal system. All chips are passivated using MwT's patented "Diamond-Like Carbon" process for
increased durability.
RF Specifications
SYMBOL
SSG
P1dB
OIP3
PAE
(1)
•
Vds=7.5V, Ids=560mA, Ta= 25
°C
(1)
FREQ
4 GHz
4 GHz
4 GHz
4 GHz
UNITS
dB
dBm
dBm
%
MIN
12.0
32.0
TYP
13.5
33.0
47
40
PARAMETERS & CONDITIONS
Small Signal Gain
Output Power at 1dB Compression
Output IP3
Power Added Efficiency at P1dB
(1)
RF measurement is taken in a test fixture with tuners at input and output.
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208
WEB
www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2006
MwT-22Q4
High Power, High Linearity Packaged FET
DC Specifications (Ta = 25ºC)
SYMBOL
IDSS
Gm
Vp
BVGSO
BVGDO
Rth
PARAMETERS & CONDITIONS
Saturated Drain Current
Vds=4.0 V Vgs=0.0 V
Transconductance
Vds=2.5 V Vgs=0.0 V
Pinch-off Voltage
Vds=3.0 V Ids=30 mA
Gate-to-Source Breakdown Voltage
Igs= -5.0 mA
Gate-to-Drain Breakdown Voltage
Igd= -5.0 mA
Thermal Resistance
UNITS
mA
mS
V
V
V
°C/W
-8.0
-12.0
MIN
800
500
650
-1.2
-12.0
-14.0
16
-5.0
TYP
MAX
1200
Outline Diagram
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208
WEB
www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2006
MwT-22Q4
High Power, High Linearity Packaged FET
Absolute Maximum Rating (Ta= 25
°C)*
SYMBOL
Vds
Vgs
Ids
Igs
Pdiss
Pin max
Tch
Tstg
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Gate Current
DC Power Dissipation
RF Input Power
Channel Temperature
Storage Temperature
UNITS
V
V
mA
mA
W
dBm
ºC
ºC
ABSOLUTE MAXIMUM
9
-6 to +0.8
800
5
6
+28
150
-65 to 150
*Operation
of this device above any one of these parameters may cause permanent damage.
Application Circuits
Typical RF Performance(2)
Vds=7.5V, Ids=560mA, Ta=25°C
Parameter
Test Frequency
Gain
Input Return Loss
Output Return Loss
P1dB
Output IP3
Noise Figure
Units
MHz
dB
dB
dB
dB
dBm
dB
870-960
19
-12
-5
33
44
2.7
Typical Data
2110-2170
16
-11
-6
33
46
2.9
2400-2600
15
-10
-7
33
46
3.0
3400-3600
12
-10
-6
32
45
3.8
2. See Circuit Schematic for details of matching circuits.
Typical Scattering Parameters:
(Vds=7.5V, Ids=550mA, Ta =25°C Reference Planes at Leads)
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208
WEB
www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2006
MwT-22Q4
High Power, High Linearity Packaged FET
F[GHz]
Mag
0.05
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
2.75
3.00
3.25
3.50
3.75
4.00
0.95
0.90
0.89
0.90
0.90
0.90
0.90
0.90
0.90
0.89
0.89
0.88
0.87
0.86
0.86
0.85
0.85
S11
Ang
-33.45
-111.86
-148.14
-164.10
-172.81
-177.72
179.59
178.38
177.97
177.88
177.68
176.90
174.99
171.54
166.47
159.69
152.31
Mag
24.11
13.93
8.01
5.40
3.99
3.13
2.57
2.19
1.92
1.73
1.61
1.52
1.45
1.41
1.36
1.28
1.19
S21
Ang
159.65
119.43
98.31
87.21
79.61
74.14
69.75
65.99
62.77
59.55
56.19
52.44
47.68
41.91
34.85
26.94
18.82
Mag
0.01
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.04
0.04
0.04
0.04
S12
Ang
88.41
31.22
13.59
5.76
2.05
-0.10
-0.62
-1.56
-0.40
-0.54
-0.60
-1.50
-3.49
-6.70
-10.26
-15.03
-19.42
Mag
0.26
0.52
0.59
0.61
0.63
0.64
0.64
0.64
0.63
0.62
0.61
0.59
0.57
0.55
0.54
0.54
0.56
S22
Ang
-142.44
-160.02
-173.10
-179.47
177.27
175.73
175.44
175.81
176.46
176.79
176.32
174.61
171.05
165.56
158.14
149.75
141.79
Circuit Schematic:
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208
WEB
www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2006
MwT-22Q4
High Power, High Linearity Packaged FET
The information and the circuit provided in this note intend to show the capability of
MWT22Q4 and to help customers use the device in their designs. It is a reference only.
ATC200B104
-Vgs
0.1uF
ATC200B104
0.1uF
ATC700A102
1000pF
-Vgs_1
ATC700A102
1000pF
ATC100A101
50
100pF
ATC100A101
100pF
L1
L4
C1
TRL1
TRL2
TRL3
R1
TRL4
TRL5
TRL6
TRL7
TRL8
TRL9
C8
TRL10
RF_Output
E
RF_Input
E
E
E
E
E
E
E
E
E
L3
C2
C3
C4
L2
C6
C7
C9
S
MWT22QFN
C5
Bill of Materials:
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208
WEB
www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2006
FPGA/CPLD
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
