RT3C99M
Composite Transistor
For Muting Application
Silicon Npn Epitaxial Type
DESCRIPTION
RT3C99M is a composite transistor built with two
2SC5938A chips in SC-88 package.
OUTLINE DRAWING
2.1
1.25
①
0.65
②
③
⑥
⑤
④
0.2
Unit：mm
FEATURE
Silicon NPN epitaxial type
Each transistor elements are independent.
2.0
APPLICATION
muting circuit、switching circuit
0.65
Mini package for easy mounting
0.65
0½0.1
Tr1
Tr2
TERMINAL
CONNECTOR
①：EMITTER1
②：BASE1
③：COLLECTOR2
④：EMITTER2
⑤：BASE2
⑥:COLLECTOR1
JEITA：SC-88
MAXIMUM RATING (Ta=25℃)
SYMBOL
V
CBO
V
EBO
V
CEO
I
C
P
C
（Total）
T
j
T
stg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector dissipation（Ta=25℃）
Junction temperature
Storage temperature
RATING
50
40
20
200
150
＋125
-55½＋125
UNIT
V
V
V
mA
mW
℃
℃
MARKING
6
5
4
.
C９９
１
2
3
ISAHAYA ELECTRONICS CORPORATION
0.13
0.9
RT3C99M
Composite Transistor
For Muting Application
Silicon Npn Epitaxial Type
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Symbol
I
CBO
I
EBO
h
FE*
V
CE(sat)
f
T
C
ob
Ron
Parameter
Collector cut off current
Emitter cut off current
DC forward current gain
Collector to Emitter saturation voltage
Gain band width product
Collector output capacitance
Output On-resistance
Test conditions
V
CB
=50V,I
E
=0
V
EB
=40V,I
C
=0
V
CE
=2V,I
C
=4mA
I
C
=30mA,I
B
=3mA
V
CE
=6V,I
E
=-4mA
V
CB
=10V,I
E
=0,f=1MH
Z
I
B
=5mA,
f=1MHz
Item
hFE
Limits
Min
-
-
200
-
-
-
-
Typ
-
-
-
30
30
5.0
0.95
A
200½700
Max
0.1
0.1
1200
-
-
-
-
B
350½1200
Unit
μA
μA
-
V
MH
Z
pF
Ω
* : It shows h
FE
classification in right table.
TYPICAL CHARACTERISTICS (Tr1、Tr2)
COMMON EMITTER OUTPUT
60
COLLECTOR CURRENT IC(mA)
Ta=25℃
50
40
30
20
10
0
0
2
4
6
8
10
COLLECTOR TO EMITTER VOLTAGE VCE(V)
300μA
250μA
200μA
150μA
100μA
IB=50μA
COLLECTOR CURRENT IC(mA)
40
50
COMMON EMITTER TRANSFER
Ta=25℃
VCE=2V
30
20
10
0
0
0.2
0.4
0.6
0.8
BASE TO EMITTER VOLTAGE VBE(V)
1
ISAHAYA ELECTRONICS CORPORATION
RT3C99M
Composite Transistor
For Muting Application
Silicon Npn Epitaxial Type
DC FORWARD CURRENT GAIN
VS. COLLECTOR CURRENT
DC REVERSE CURRENT GAIN
VS. COLLECTOR CURRENT
DC REVERSE CURRENT GAIN hFER
10000
Ta=25℃
VCE=-2V
1000
10000
DC FORWARD CURRENT GAIN hFE
Ta=25℃
VCE=2V
1000
100
100
10
0.1
1
10
100
COLLECTOR CURRENT IC(mA)
10
-0.1
-1
-10
COLLECTOR CURRENT IC(mA)
-100
COLLECTOR TO EMITTER SATURATION VOLTAGE
VS. COLLECTOR CURRENT
1000
C TO E SATURATION VOLTAGE
VCE(sat)(mV)
ON RESISTANCE Ron(Ω)
10
ON RESISTANCE VS. BASE CURRENT
Ta=25℃
IC/IB=10
100
Ta=25℃
10
1
1
0.1
0.1
1
10
100
COLLECTOR CURRENT IC(mA)
1000
0.1
0.1
1
BASE CURRENT
10
IB(mA)
100
GAIN BAND WIDTH PRODUCT VS.
EMITTER CURRENT
100
GAIN BAND WIDTH PRODUCT (MHz)
Ta=25℃
VCE=6V
COLLECTOR OUTPUT CAPACITANCE
VS.COLLECTOR TO BASE VOLTAGE
100
COLLECTOR OUTPUT CAPACITANCE
Cob(pF)
Ta=25℃
IE=0
f=1MHz
10
10
-0.1
-1
EMITTER CURRENT
-10
IE(mA)
-100
1
0.1
1
10
VCB(V)
100
COLLECTOR TO BASE VOLTAGE
ISAHAYA ELECTRONICS CORPORATION
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