MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF1535T1/D
The RF MOSFET Line
RF Power Field Effect Transistors
Designed for broadband commercial and industrial applications with frequen-
cies to 520 MHz. The high gain and broadband performance of these devices
make them ideal for large–signal, common source amplifier applications in
12.5 volt mobile FM equipment.
•
Specified Performance @ 520 MHz, 12.5 Volts
Output Power — 35 Watts
Power Gain — 10.0 dB
Efficiency — 50%
•
Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 520 MHz, 2 dB Overdrive
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large–Signal Impedance Parameters
•
Broadband–Full Power Across the Band: 135–175 MHz
400–470 MHz
450–520 MHz
•
Broadband UHF/VHF Demonstration Amplifier Information Available
Upon Request
•
In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
N–Channel Enhancement–Mode Lateral MOSFETs
MRF1535T1
MRF1535FT1
520 MHz, 35 W, 12.5 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
Freescale Semiconductor, Inc...
CASE 1264–09, STYLE 1
TO–272
PLASTIC
MRF1535T1
CASE 1264A–02, STYLE 1
TO–272 STRAIGHT LEAD
PLASTIC
MRF1535FT1
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T
C
= 25°C (1)
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
I
D
P
D
T
stg
T
J
Value
40
±20
6
135
0.50
–65 to +150
175
Unit
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
(1) Calculated based on the formula P
D
=
TJ – TC
R
θJC
Symbol
R
θJC
Max
0.90
Unit
°C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
MOTOROLA RF
Motorola, Inc. 2003
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF1535T1 MRF1535FT1
1
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS — continued
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 100
µAdc)
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
Gate–Source Leakage Current
(V
GS
= 10 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 12.5 Vdc, I
D
= 400
µA)
Drain–Source On–Voltage
(V
GS
= 5 Vdc, I
D
= 0.6 A)
V
GS(th)
R
DS(on)
V
DS(on)
1
—
—
—
—
—
2.6
0.7
1
Vdc
Ω
Vdc
V
(BR)DSS
I
DSS
I
GSS
60
—
—
—
—
—
—
1
0.3
Vdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
Freescale Semiconductor, Inc...
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 2.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance (Includes Input Matching Capacitance)
(V
DS
= 12.5 Vdc, V
GS
= 0 V, f = 1 MHz)
Output Capacitance
(V
DS
= 12.5 Vdc, V
GS
= 0 V, f = 1 MHz)
Reverse Transfer Capacitance
(V
DS
= 12.5 Vdc, V
GS
= 0 V, f = 1 MHz)
RF CHARACTERISTICS
(In Motorola Test Fixture)
Common–Source Amplifier Power Gain
(V
DD
= 12.5 Vdc, P
out
= 35 Watts, I
DQ
= 500 mA)
Drain Efficiency
(V
DD
= 12.5 Vdc, P
out
= 35 Watts, I
DQ
= 500 mA)
f = 520 MHz
f = 520 MHz
C
iss
C
oss
C
rss
—
—
—
—
—
—
250
150
20
pF
pF
pF
G
ps
η
Ψ
dB
10
50
—
—
—
%
—
No Degradation in Output Power
Before and After Test
Load Mismatch
(V
DD
= 15.6 Vdc, f = 520 MHz, 2 dB Input Overdrive, VSWR 20:1 at
All Phase Angles)
MRF1535T1 MRF1535FT1
2
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
V
GG
C11
+
C10
R4
R3
C23
L5
C9
RF
INPUT
N1 C1
R2
R1
Z1
C2
C3
L1
C4
Z2
Z3
C5
L2
C6
C7
Z4
Z5
DUT
RF
OUTPUT
N2
C20
C19
B1
C22
+
C21
V
DD
Z6
C12
Z7
C13
C14
Z8
C15
Z9
C16
L3
C17
L4
C18
Z10
C8
Freescale Semiconductor, Inc...
B1
C1, C9, C20, C23
C2, C5
C3, C15
C4, C6, C19
C7
C8
C10, C21
C11, C22
C12, C13
C14
C16
C17
C18
L1
L2
L3
Ferroxcube #VK200
330 pF, 100 mil Chip Capacitors
0 to 20 pF Trimmer Capacitors
33 pF, 100 mil Chip Capacitors
18 pF, 100 mil Chip Capacitors
160 pF, 100 mil Chip Capacitor
240 pF, 100 mil Chip Capacitor
10
µF,
50 V Electrolytic Capacitors
470 pF, 100 mil Chip Capacitors
150 pF, 100 mil Chip Capacitors
110 pF, 100 mil Chip Capacitor
68 pF, 100 mil Chip Capacitor
120 pF, 100 mil Chip Capacitor
51 pF, 100 mil Chip Capacitor
17.5 nH, Coilcraft #A05T
5 nH, Coilcraft #A02T
1 Turn, #26 AWG, 0.250″ ID
L4
L5
N1, N2
R1
R2
R3
R4
Z1
Z2
Z3
Z4
Z5, Z6
Z7
Z8
Z9
Z10
Board
1 Turn, #26 AWG, 0.240″ ID
4 Turn, #24 AWG, 0.180″ ID
Type N Flange Mounts
6.5
Ω,
1/4 W Chip Resistor
39
Ω
Chip Resistor (0805)
1.2 kΩ, 1/8 W Chip Resistor
33 kΩ, 1/4 W Chip Resistor
0.970″ x 0.080″ Microstrip
0.380″ x 0.080″ Microstrip
0.190″ x 0.080″ Microstrip
0.160″ x 0.080″ Microstrip
0.110″ x 0.200″ Microstrip
0.490″ x 0.080″ Microstrip
0.250″ x 0.080″ Microstrip
0.320″ x 0.080″ Microstrip
0.240″ x 0.080″ Microstrip
Glass Teflon
, 31 mils
Figure 1. 135 – 175 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 135 – 175 MHz
60
Pout , OUTPUT POWER (WATTS)
IRL, INPUT RETURN LOSS (dB)
50
40
30
20
10
V
DD
= 12.5 Vdc
0
0
1
2
3
4
-20
10
20
30
40
155 MHz
135 MHz
175 MHz
0
-5
-10
155 MHz
135 MHz
175 MHz
-15
V
DD
= 12.5 Vdc
50
60
P
in
, INPUT POWER (WATTS)
P
out
, OUTPUT POWER (WATTS)
Figure 2. Output Power versus Input Power
Figure 3. Input Return Loss versus Output Power
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF1535T1 MRF1535FT1
3
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS, 135 – 175 MHz
19
18
17
GAIN (dB)
16
15
14
13
12
11
10
20
30
155 MHz
175 MHz
40
135 MHz
50
60
V
DD
= 12.5 Vdc
h
, DRAIN EFFICIENCY (%)
80
155 MHz
70
60
50
40
V
DD
= 12.5 Vdc
30
10
20
30
40
50
60
70
80
175 MHz
135 MHz
Freescale Semiconductor, Inc...
P
out
, OUTPUT POWER (WATTS)
P
out
, OUTPUT POWER (WATTS)
Figure 4. Gain versus Output Power
Figure 5. Drain Efficiency versus Output Power
50
Pout , OUTPUT POWER (WATTS)
80
155 MHz
175 MHz
60
135 MHz
45
h
, DRAIN EFFICIENCY (%)
V
DD
= 12.5 Vdc
P
in
= 30 dBm
155 MHz
175 MHz
135 MHz
70
40
35
50
V
DD
= 12.5 Vdc
P
in
= 30 dBm
200
400
600
800
1000
1200
30
200
400
600
800
1000
1200
40
I
DQ
, BIASING CURRENT (mA)
I
DQ
, BIASING CURRENT (mA)
Figure 6. Output Power versus Biasing Current
Figure 7. Drain Efficiency versus Biasing Current
70
Pout , OUTPUT POWER (WATTS)
60
h
, DRAIN EFFICIENCY (%)
50
40
30
20
10
175 MHz
155 MHz
135 MHz
80
135 MHz
175 MHz
60
155 MHz
70
50
I
DQ
= 250 mA
P
in
= 30 dBm
10
11
12
13
14
15
I
DQ
= 250 mA
P
in
= 30 dBm
10
11
12
13
14
15
40
V
DD
, SUPPLY VOLTAGE (VOLTS)
V
DD
, SUPPLY VOLTAGE (VOLTS)
Figure 8. Output Power versus Supply Voltage
Figure 9. Drain Efficiency versus Supply Voltage
MRF1535T1 MRF1535FT1
4
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
V
GG
C14
C13
C12
+
C11
R3
R2
R1
RF
INPUT
N1 C1
Z1
C2
C3
Z2
C4
Z3
C5
Z4
C6
C7
C10
DUT
Z5
C8
Z6
C9
Z7
C15
C16
Z8
C17
Z9
C18
C19
C20
Z10
C21
N2
RF
OUTPUT
C25
B1
V
DD
L1
C24
C23
+
C22
Freescale Semiconductor, Inc...
B1
C1
C2
C3
C4
C5
C6, C7
C8, C15, C16
C9
C10, C14, C25
C11, C22
C12, C24
C13, C23
C17, C18
C19
C20
Ferroxcube VK200
160 pF, 100 mil Chip Capacitor
3 pF, 100 mil Chip Capacitor
3.6 pF, 100 mil Chip Capacitor
2.2 pF, 100 mil Chip Capacitor
10 pF, 100 mil Chip Capacitor
16 pF, 100 mil Chip Capacitors
27 pF, 100 mil Chip Capacitors
43 pF, 100 mil Chip Capacitor
160 pF, 100 mil Chip Capacitors
10
µF,
50 V Electrolytic Capacitors
1,200 pF, 100 mil Chip Capacitors
0.1
µF,
100 mil Chip Capacitors
24 pF, 100 mil Chip Capacitors
160 pF, 100 mil Chip Capacitor
8.2 pF, 100 mil Chip Capacitor
C21
L1
N1, N2
R1
R2
R3
Z1
Z2
Z3
Z4
Z5, Z8
Z6, Z7
Z9
Z10
Board
1.8 pF, 100 mil Chip Capacitor
47.5 nH, 5 Turn, Coilcraft
Type N Flange Mounts
500
Ω
Chip Resistor (0805)
1 kΩ Chip Resistor (0805)
33 kΩ, 1/8 W Chip Resistor
0.480″ x 0.080″ Microstrip
1.070″ x 0.080″ Microstrip
0.290″ x 0.080″ Microstrip
0.160″ x 0.080″ Microstrip
0.120″ x 0.080″ Microstrip
0.120″ x 0.223″ Microstrip
1.380″ x 0.080″ Microstrip
0.625″ x 0.080″ Microstrip
Glass Teflon
, 31 mils
Figure 10. 450 – 520 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 450 – 520 MHz
60
Pout , OUTPUT POWER (WATTS)
50
40
30
20
10
0
V
DD
= 12.5 Vdc
0
1
2
3
4
5
6
-15
0
10
20
30
450 MHz
500 MHz
470 MHz
520 MHz
IRL, INPUT RETURN LOSS (dB)
0
V
DD
= 12.5 Vdc
-5
450 MHz
-10
470 MHz
520 MHz
500 MHz
40
50
60
P
in
, INPUT POWER (WATTS)
P
out
, OUTPUT POWER (WATTS)
Figure 11. Output Power versus Input Power
Figure 12. Input Return Loss versus Output Power
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF1535T1 MRF1535FT1
5
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