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SBR30U30CT-G

产品描述Rectifier Diode, 1 Phase, 2 Element, 30A, 30V V(RRM), Silicon, TO-220AB, GREEN, PLASTIC PACKAGE-3
产品类别分立半导体    二极管   
文件大小96KB,共4页
制造商Diodes Incorporated
标准
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SBR30U30CT-G概述

Rectifier Diode, 1 Phase, 2 Element, 30A, 30V V(RRM), Silicon, TO-220AB, GREEN, PLASTIC PACKAGE-3

SBR30U30CT-G规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证符合
零件包装代码TO-220AB
包装说明R-PSFM-T3
针数3
Reach Compliance Codenot_compliant
ECCN代码EAR99
应用FAST SOFT RECOVERY
外壳连接CATHODE
配置COMMON CATHODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.37 V
JEDEC-95代码TO-220AB
JESD-30 代码R-PSFM-T3
JESD-609代码e3
最大非重复峰值正向电流280 A
元件数量2
相数1
端子数量3
最高工作温度150 °C
最低工作温度-65 °C
最大输出电流30 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)260
认证状态Not Qualified
最大重复峰值反向电压30 V
表面贴装NO
端子面层Matte Tin (Sn)
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间40
Base Number Matches1

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SBR30U30CT
30A SBR
®
SUPER BARRIER RECTIFIER
Please click here to visit our online spice models database.
Features
Ultra Low Forward Voltage Drop
Excellent High Temperature Stability
Superior Reverse Avalanche Capability
Patented Super Barrier Rectifier Technology
Soft, Fast Switching Capability
150°C Operating Junction Temperature
Lead Free Finish, RoHS Compliant (Note 2)
Also Available in Green Molding Compound (Note 4)
Mechanical Data
Case: TO-220AB
Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 1.85 grams (approximate)
TO-220AB
Top View
TO-220AB
Bottom View
Package Pin Out
Configuration
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Output Current @ T
C
= 140ºC
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Non-Repetitive Avalanche Energy
(T
J
= 25ºC, I
AS
= 20A, L = 8.5 mH)
Repetitive Peak Avalanche Power
(1µs, 25ºC)
Symbol
V
RRM
V
RWM
V
RM
I
O
I
FSM
E
AS
P
ARM
Value
30
30
280
800
9800
Unit
V
A
A
mJ
W
Thermal Characteristics
Characteristic
Typical Thermal Resistance
Thermal Resistance Junction to Case
Operating and Storage Temperature Range
Symbol
R
θ
JC
T
J
, T
STG
Value
2
-65 to +150
Unit
ºC/W
ºC
Electrical Characteristics
Characteristic
@T
A
= 25°C unless otherwise specified
Symbol
Min
Typ
0.41
0.50
0.34
0.33
40
Max
0.45
0.54
0.37
0.5
1.5
100
Unit
Test Condition
I
F
= 15A, T
J
= 25ºC
I
F
= 30A, T
J
= 25ºC
I
F
= 15A, T
J
= 125ºC
I
F
= 30A, T
J
= 125ºC
V
R
= 30V, T
J
= 25ºC
V
R
= 30V, T
J
= 125ºC
Forward Voltage Drop (per leg)
V
F
-
V
Leakage Current (Note 1)
Notes:
I
R
-
mA
1. Short duration pulse test used to minimize self-heating effect.
2. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see
EU Directive 2002/95/EC Annex Notes.
SBR is a registered trademark of Diodes Incorporated.
SBR30U30CT
Document number: DS31063 Rev. 7 - 2
1 of 4
www.diodes.com
January 2009
© Diodes Incorporated

 
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