ＲＴＡＮ４３０Ｘ SERIES
FEATURE
・Built-in bias resistor (R1=4.7kΩ)
・Small package for easy mounting.
・High reverse hFE
・Small collector to emitter saturation voltage.
VCE(sat)=10mV(TYP.)（@IC=10mA/IB=0.5mA）
・Low on Resistance
Ron=0.80Ω(TYP.)（@VI=5V）
TRANSISTOR WITH RESISTOR
FOR MUTING APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
RTAN430T2 (PRELIMINARY)
RTAN430M
2.1
0.2
0.8
0.2
0.425
1.25
Unit：mm
0.425
0.25
0.4
APPLICATION
muting circuit , switching circuit
1.2
0.8
0.65
①
②
③
①
②
③
2.0
1.3
0.4
0.9
0.65
EQUIVALENT CIRCUIT
C
(OUT)
0.7
R1
B
(IN)
JEITA, JEDEC：－
ISAHAYA：T-USM
TERMINAL CONNECTOR
①：BASE
②：EMITTER
③：COLLECTOR
RTAN430U
1.6
0.4
0.8
0.4
JEITA：SC-70
JEDEC：－
TERMINAL CONNECTOR
①：BASE
②：EMITTER
③：COLLECTOR
RTAN430C
2.5
0.5
1.5
0.5
E
(GND)
0.3
0½0.1
0.15
①
②
③
0½0.1
0.16
0.4
0.5
①
②
③
2.9
1.90
1.6
1.0
0.7
0.55
0.15
1.1
JEITA：SC-75A
JEDEC：－
TERMINAL CONNECTOR
①：BASE
②：EMITTER
③：COLLECTOR
0½0.1
JEITA：SC-59
JEDEC：Similar to TO-236
TERMINAL CONNECTOR
①：BASE
②：EMITTER
③：COLLECTOR
ISAHAYA ELECTRONICS CORPORATION
0.8
0.95
0.5
0.95
0.5
0.3
ＲＴＡＮ４３０Ｘ SERIES
MAXIMUM RATING（Ｔ½＝２５℃）
SYMBOL
Ｖ
ＣＢＯ
Ｖ
ＥＢＯ
Ｖ
ＣＥＯ
Ｉ
Ｃ
Ｐ
Ｃ
Ｔ½
Ｔ½½½
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector
dissipation(Ta=25℃)
Junction temperature
Storage temperature
RTAN430T2
RATING
RTAN430U
RTAN430M
40
40
20
400
150
+150
-55½+150
200
TRANSISTOR WITH RESISTOR
FOR MUTING APPLICATION
SILICON NPN EPITAXIAL TYPE
RTAN430C
UNIT
V
V
V
mA
mW
℃
℃
125（※）
+125
-55½+125
ELECTRICAL CHARACTERISTICS（Ｔ½＝２５℃）
SYMBOL
Ｖ
（ＢＲ）ＣBＯ
Ｖ
（ＢＲ）EBＯ
Ｖ
（ＢＲ）CEＯ
Ｉ
ＣＢＯ
Ｉ
EＢＯ
½
ＦＥ
Ｖ
ＣＥ（½½½）
Ｒ
１
½
Ｔ
R
ON
PARAMETER
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
Input resistance
Gain band width product
Output “ON” resistance
※package mounted on 9mm×19mm×1mm glass-epoxy substrate.
TEST CONDITION
I
C
=50μA，I
E
=0mA
I
E
=50μA，I
C
=0mA
I
C
=1mA，R
BE
=∞
V
CB
=40V，I
E
=0mA
V
EB
=40V，I
C
=0mA
V
CE
=5V，I
C
=10mA
I
C
=10mA，I
B
=0.5mA
V
CE
=10V，I
E
=-10mA，f=100MHz
V
I
=5V，R
L
=1kΩ
MIN
40
40
20
LIMIT
TYP
MAX
UNIT
V
V
V
μA
μA
－
mV
kΩ
MHz
Ω
820
3.29
10
4.7
38
0.80
0.5
0.5
2500
6.11
TYPICAL CHARACTERISTICS
Input on voltage - collector current
100
Ta=25℃
VCE=0.2V
collector current - Input on voltage
1000
Ta=25℃
VCE=5V
10
collector current IC (μA)
Input on voltage VI(ON) (V)
100
1
0.1
0.1
1
10
collector current IC (mA)
100
1000
10
0
0.2
0.4
0.6
0.8
1
Input off voltage VI(OFF) (V)
ISAHAYA ELECTRONICS CORPORATION
DC forward gain current - collector current
10000
10000
DC revarse gain current - collector current
1000
DC reverse gain current hFER
DC forward gain current hFE
1000
100
Ta=25℃
VCE=5V
100
Ta=25℃
VEC=5V
10
10
1
0.1
1
10
collector current IC (mA)
100
1000
1
0.1
1
10
collector current IC (mA)
100
1000
collector-emitter saturation
voltage - collector current
Ron-VIN
100
1000
collector-emitter saturation voltage
VCE(sat) (mV)
ON RESISTANCE Ron (Ω)
Ta=25℃
IC/IB=20
100
10
10
1
Ta=25℃
1
0.1
0.1
1
10
100
1000
collector current IC (mA)
0.1
0.1
1
10
100
INPUT VOLTAGEVI (V)
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs!
·
ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
Notes regarding these materials
·
These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the
customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging
ISAHAYA or third party.
·
ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights ,
originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials.
·
All information contained in these materials, including product data, diagrams and charts, represent information on products
at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice
due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics
Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed
herein.
·
ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used
under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an
authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes ,
such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
·
The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these
materials.
·
If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a
license from the Japanese government and cannot be imported into a country other than the approved destination. Any
diversion or re-export contrary to t e export control laws and regulations of Japan and/or the country of destination is
h
prohibited.
·
Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these
materials or the products contained therein.
Apr.2007
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