RT2C00M
COMPOSITE TRANSISTOR
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
RT2C00M is a composite transistor built with two 2SC3052 chips in
SC-88 package.
OUTLINE DRAWING
2.1
1.25
0.2
①
0.65
2.0
②
0.65
③
④
⑤
0.9
0.65
⑤
Tr1
④
Tr2
0∼0.1
Unit:mm
FEATURE
●Silicon npn epitaxial type
Each transistor elements are independent.
●Mini package for easy mounting
APPLICATION
For low frequency amplify application
0.13
TERMINAL CONNECTOR
①
：BASE１
②
：EMITTER
（COMMON
）
③
：BASE２
④
：COLLECTOR２
⑤
：COLLECTOR１
JEITA：−
JEDEC
：−
②
③
①
MAXIMUM RATINGS
Symbol
V
CBO
V
EBO
V
CEO
I
C
P
C
T
j
T
stg
（Ta=25℃ （ 、Tr2
） Tr1
）
Parameter
Ratings
50
6
50
200
150
＋125
-55∼＋125
Unit
V
V
V
mA
mW
℃
℃
TYPE
MARKING
⑤
④
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector dissipation
（Total
Ta=25℃
）
Junction temperature
Storage temperature
L E
①
② ③
hFE ITEM
ISAHAYA ELECTRONICS CORPORATION
RT2C00M
COMPOSITE TRANSISTOR
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)CEO
I
CBO
I
EBO
h
FE
*
h
FE
V
CE(sat)
f
T
Cob
NF
Parameter
Collector to Emitter break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
Collector to Emitter saturation voltage
Gain band width product
Collector output capacitance
Noise figure
（Ta=25℃ （ 、Tr2
） Tr1
）
Test conditions
I
C
=100μA，R
BE
=∞
V
CB
=50V，I
E
=0mA
V
EB
=6V，I
C
=0mA
V
CE
=6V，I
C
=-1mA
V
CE
=6V，I
C
=0.1mA
I
C
=100mA，I
B
=10mA
V
CE
=6V，I
E
=10mA
V
CB
=6V，I
E
=0mA，f=1MHz
V
CE
=6V，I
E
=-0.1mA，f=100Hz，R
G
=2kΩ
Limits
Min
50
-
-
150
90
-
-
-
-
Typ
-
-
-
-
-
-
200
2.5
-
Max
-
0.1
0.1
800
-
0.3
-
-
15
Unit
V
μA
μA
-
-
V
MHz
pF
dB
* : It shows h
FE
classification in right table.
ITEM
E
hFE
150∼300
MARKING
LE
F
250∼500
LF
G
400∼800
LG
ISAHAYA ELECTRONICS CORPORATION
RT2C00M
COMPOSITE TRANSISTOR
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
COMMON EMITTER OUTPUT
50
0.16mA
50
0.14mA
0.12mA
0.10mA
30
0.08mA
20
0.06mA
0.04mA
10
0.02mA
IB=0
0
0
1
2
3
4
COLLECTOR EMITTER VOLTAGE VCE(V)
5
0
0
Ta=25℃
COLLECTOR CURRENT IC(mA)
40
COMMON EMITTER TRANSFER
Ta=25℃
VCE=6V
COLLECTOR CURRENT IC(mA)
40
30
20
10
0.2
0.4
0.6
0.8
BASE TO EMITTER VOLTAGE VBE(V)
GAIN BAND WIDTH PRODUCT
VS. EMITTER CURRENT
1
DC FORWARD CURRENT GAIN
VS. COLLECTOR CURRENT
10000
GAIN BAND WIDTH PRODUCT fT(MHz)
Ta=25℃
VCE=6V
100(@IC=1mA)
1000
250
Ta=25℃
VCE=6V
200
RELATIVE VALUE OF DC FORWARD
CURRENT GAIN hFE
150
100
100
10
50
1
0.1
1
10
100
1000
COLLECTOR CURRENT IC(mA)
0
-0.1
-1
-10
EMITTER CURRENT IE(mA)
-100
COLLECTOR OUTPUT CAPACITANCE
VS. COLLECTOR TO BASE VOLTAGE
100
COLLECTOR OUTPUT CAPACITANCE
Cob(pF)
Ta=25℃
IE=0
f=1MHz
10
1
0.1
0.1
1
10
100
COLLECTOR TO BASE VOLTAGE VCB(V)
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs!
·
ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
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·
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·
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·
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·
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Jan.2003
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