RT2A00M
COMPOSITE TRANSISTOR
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
RT2A00M is a composite transistor built with two 2SA1602A chips in
SC-88 package.
OUTLINE DRAWING
2.1
1.25
0.2
①
2.0
0.65
②
0.65
③
④
⑤
0.9
0.65
⑤
Tr1
④
Tr2
0∼0.1
Unit:mm
FEATURE
●Silicon pnp epitaxial type
Each transistor elements are independent.
●Mini package for easy mounting
APPLICATION
For low frequency amplify application
0.13
TERMINAL CONNECTOR
①
：BASE
１
②
：EMITTER
（COMMON
）
③
：BASE
２
④
：COLLECTOR２
⑤
：COLLECTOR１
JEITA
：−
JEDEC
：−
②
③
①
MAXIMUM RATINGS
（Ta=25℃ （ 、Tr2
）Tr1
）
Symbol
V
CBO
V
EBO
V
CEO
I
C
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector dissipation
（Total
Ta=25℃
）
Junction temperature
Storage temperature
Ratings
-60
-6
-50
-200
150
＋125
-55∼＋125
Unit
V
V
V
mA
mW
℃
℃
MARKING
⑤
④
M
・
E
TYPE
P
C
T
j
T
stg
①
② ③
hFE ITEM
ISAHAYA ELECTRONICS CORPORATION
RT2A00M
COMPOSITE TRANSISTOR
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
ELECTRICAL CHARACTERISTICS
（Ta=25℃（ 、Tr2
）Tr1
）
Symbol
V
(BR)CEO
I
CBO
I
EBO
h
FE
*
h
FE
V
CE(sat)
f
T
Cob
NF
Parameter
Collector to Emitter break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
Collector to Emitter saturation voltage
Gain band width product
Collector output capacitance
Noise figure
Test conditions
I
C
=-100μA，R
BE
=∞
V
CB
=-60V，I
E
=0mA
V
EB
=-6V，I
C
=0mA
V
CE
=-6V，I
C
=-1mA
V
CE
=-6V，I
C
=-0.1mA
I
C
=-100mA，I
B
=-10mA
V
CE
=-6V，I
E
=10mA
V
CB
=-6V，I
E
=0mA
，f=1MHz
V
CE
=-6V，I
E
=0.3mA，f=100Hz，R
G
=10kΩ
Limits
Min
-50
-
-
150
90
-
-
-
-
ITEM
hFE
MARKING
Typ
-
-
-
-
-
-
200
4.0
-
Max
-
-0.1
-0.1
800
-
-0.3
-
-
20
E
150∼300
M½E
Unit
V
μA
μA
-
-
V
MHz
pF
dB
F
250∼500
M½F
* : It shows h
FE
classification in right table.
ISAHAYA ELECTRONICS CORPORATION
RT2A00M
COMPOSITE TRANSISTOR
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
COMMON EMITTER OUTPUT
-50
-50
0.18mA
0.16mA
COLLECTOR CURRENT IC(mA)
-40
Ta=25℃
0.14mA
0.12mA
-30
0.10mA
0.08mA
-20
0.06mA
0.04mA
-10
0.02mA
IB=0
-0
-0
-1
-2
-3
-4
-5
COLLECTOR EMITTER VOLTAGE VCE(V)
-0
-0.0
-0.2
-0.4
-0.6
-0.8
BASE TO EMITTER VOLTAGE VBE(V)
-1.0
COLLECTOR CURRENT IC(mA)
-40
Ta=25℃
VCE=-6V
COMMON EMITTER TRANSFER
-30
-20
-10
DC FORWARD CURRENT GAIN
VS. COLLECTOR CURRENT
10000
RELATIVE VALUE OF DC FORWARD CURRENT
GAIN hFE
Ta=25℃
VCE=-6V
100(@IC=-1m
1000
250
Ta=25℃
VCE=-6V
200
GAIN BAND WIDTH PRODUCT
VS. EMITTER CURRENT
GAIN BAND WIDTH PRODUCT fT(MHz)
150
100
100
10
50
1
-0.1
0
-1
-10
-100
COLLECTOR CURRENT IC(mA)
COLLECTOR OUTPUT CAPACITANCE
VS. COLLECTOR TO BASE VOLTAGE
-1000
0.1
1
10
EMITTER CURRENT IE(mA)
100
100
COLLECTOR OUTPUT CAPACITANCE Cob(pF)
Ta=25℃
IE=0
f=1MHz
10
1
0.1
-0.1
-1
-10
COLLECTOR TO BASE VOLTAGE VCB(V)
-100
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs!
·
ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
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·
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·
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originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials.
·
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herein.
·
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under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an
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·
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h
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Jan.2003
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