1N 4151
Small-Signal Diode
Fast Switching Diode
Features
Silicon Epitaxial Planar Diode
Fast switching diode
This diode is also available in other case styles including the
MiniMELF case with the type designation LL4151.
Mechanical Data
Case: DO-34, DO-35 Glass Case
Weight: approx. 0.13g
Maximum Ratings and Thermal Characteristics
(T
A
=25
o
C unless otherwise noted.)
Parameter
Reverse voltage
Peak reverse voltage
Average rectified current
half wave rectification with resistive load at
T
amb
=25
o
C and f>50Hz
(1)
Surge forward current at t<1s and T
j
=25
o
C
Power dissipation at T
amb
=25
o
C
(1)
Symbol
V
R
V
RM
I
F(AV)
I
FSM
P
tot
R
θ
JA
T
j
T
S
Limit
50
75
150
500
500
350
175
-65 to +175
Unit
Volts
Volts
mA
mA
mW
o
Thermal resistance junction to ambient air
(1)
Junction temperature
Storage temperature range
C/W
o
C
C
o
Electrical Characteristics
(T
J
=25
o
C unless otherwise noted.)
Parameter
Reverse breakdown voltage
Forward voltage
Leakage current
Capacitance
Symbol
V
(BR)R
V
F
I
R
C
tot
Test Condition
I
R
=5
u
A (pulsed)
I
F
=50mA
V
R
=50V
V
R
=50V, T
J
=150
O
C
V
F
=V
R
=0V
I
F
=10mA to I
R
=10mA
to I
R
=1mA
I
F
=10mA to I
R
=1mA
V
R
=6V, R
L
=100
Ω
f=100MHz, V
RF
=2V
Min.
75
-
-
-
-
-
0.45
Typ.
-
-
-
-
-
-
-
Max.
-
1.0
50
50
2.0
4.0
Unit
Volts
Volt
nA
uA
pF
Reverse recovery time
t
rr
η½
ns
2.0
-
-
Rectification efficiency
Notes:
1. Valid provided that leads at a distance of 8mm from case are kept at ambient temperature
619
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